• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.29-35
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• 2012

The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the $SiN_x:H$ film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. Initially PECVD-$SiN_x:H$ film trends were investigated by varying the deposition parameters (temperature, electrode gap, RF power, gas flow rate etc.) to optimize the process parameter conditions. Then by varying gas ratios ($NH_3/SiH_4$), the hydrogenated silicon nitride films were analyzed for its optical, electrical, chemical and surface passivation properties. The $SiN_x:H$ films of refractive indices 1.90~2.20 were obtained. The film deposited with the gas ratio of 3.6 (Refractive index=1.98) showed the best properties in after firing process condition. The single crystalline silicon solar cells fabricated according to optimized gas ratio (R=3.6) condition on large area substrate of size $156{\times}156mm$ (Pseudo square) was found to have the conversion efficiency as high as 17.2%. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.349-354
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• 1999

The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$$CdI_2$-doped specimen.

• Journal of the Korean Chemical Society
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• v.30 no.3
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• pp.273-281
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• 1986

This study is focused on the correct measurement of the equations for the determination of the impedance parameters-the differential capacity of the double layer $C_d$, solution resistance $R_Q$, transfer resitance $R_i$, and adsorption pseudcapacity $C_{\phi}$/ The application of only an imaginary part of complex function of ${\omega}$ at the sinusoidal steady state indicates the following equations of total impedance: at low frequency $|Z_{LF}|=1/{\omega}_1\;C_{\phi}\;{\sqrt{1+{{\omega}_1}^2/{\omega}^2}$, at high frequency $|Z_{HF}|={\omega}_2/({\omega}_1{\omega}_3C{\phi})({\omega}^2+{{\omega}_2}^2)\;{\sqrt{{({\omega}^2+{\omega}_2{\omega}_3)}^2+{({\omega}_2{\omega}-{\omega_3{\omega})^2}}$. The values of the total impedance of cell, phase angle, and cell current that are necessary for the calculations of impedance parameters were experimentally measured from 200 to 6000Hz for the following supporting electrolytes, 0.5M $Na_2SO_4$, 1M NaCl, 19.373% sea water, 1M HCl, 1M $KNO_3$ and for $10^{-2}M$ KI and 60mM DBNA (Di-iso-Butylnitrosoamine) in these supporting electrolytes. The derived equations in this study shows that the values of impedance parameters of $C_d,\;C_{\phi},\;R_i\;and\;R_Q\;are\;15{\sim}40\;{\mu}F/cm^2,\;162{\sim}758\;{\mu}F/cm^2\;11.5{\sim}57.6\;ohm{\cdot}cm^2\;and\;0.5{\times}10^{-2}{\sim}4.1{\times}10^{-2}\;ohm{\cdot}cm^2$ respectively.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.96-107
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• 2004

In this paper, a new integral variable structure regulation controller(IVSRC) is designed by using a special integral sliding surface and a disturbance observer for the improved regulation control of highly nonlinear robot manipulators with prescribed output performance. The sliding surface having the integral state with a special initial condition is employed in this paper to exactly predetermine the ideal sliding trajectory from a given initial condition to origin without any reaching phase. And a continuous sliding mode input using the disturbance observer is also introduced in oder to effectively follow the predetermined sliding trajectory within the prescribed accuracy without large computation burden. The performance of the prescribed tracking accuracy to the predetermined sliding trajectory is clearly investigated in detail through the two theorems together with the closed loop stability. The design of the proposed IVSRC is separated into the performance design and robustness design in each independent link. The usefulness of the algorithm has been demonstrated through simulation studies on the regulation control of a two link manipulator under parameter uncertainties and payload variations, in view of no reaching phase, no overshoot, predetermined response with prescribed accuracy, easy change of output performance, separation of design phase, and so on.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.2
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• pp.153-160
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• 2010

A magnetocardiogram (MCG) is a recording of the biomagnetic signals generated by cardiac electrical activity. Biomagnetic instruments are based on superconducting quantum interference devices (SQUIDs). A liquid cryogenic Dewar flask was used to maintain the superconductors in a superconducting state at a very low temperature (4 K). In this study, the temperature distribution characteristics of the liquid helium in the Dewar flask was investigated. The Dewar flask used in this study has a 30 L liquid helium capacity with a hold time of 5 d. The Dewar flask has two thermal shields rated at 150 and 40 K. The temperatures measured at the end of the thermal shield and calculated from the computer model were compared. This study attempted to minimize the heat transfer rate of the cryogenic Dewar flask using an optimization method about the geometric variable to find the characteristics for the design geometric variables in terms of the stress distribution of the Dewar flask. For thermal and optimization analysis of the structure, the finite element method code ANSYS 10 was used. The computer model used for the cryogenic Dewar flask was useful to predict the temperature distribution for the area less affected by the thermal radiation.

• Proceedings of the KSRS Conference
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• 2008.10a
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• pp.220-223
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• 2008

A camera system for the satellite application performs the mission of observation by measuring radiated light energy from the target on the earth. As a development stage of the system, the signal level analysis by estimating the number of electron collected in a pixel of an applied CCD is a basic tool for the performance analysis like SNR as well as the data path design of focal plane electronic. In this paper, two methods are presented for the calculation of the number of electrons for signal level analysis. One method is a quantitative assessment based on the CCD characteristics and design parameters of optical module of the system itself in which optical module works for concentrating the light energy onto the focal plane where CCD is located to convert light energy into electrical signal. The other method compares the design\ parameters of the system such as quantum efficiency, focal length and the aperture size of the optics in comparison with existing camera system in orbit. By this way, relative count of electrons to the existing camera system is estimated. The number of electrons, as signal level of the camera system, calculated by described methods is used to design input circuits of AD converter for interfacing the image signal coming from the CCD module in the focal plane electronics. This number is also used for the analysis of the signal level of the CCD output which is critical parameter to design data path between CCD and A/D converter. The FPE(Focal Plane Electronics) designer should decide whether the dividing-circuit is necessary or not between them from the analysis. If it is necessary, the optimized dividing factor of the level should be implemented. This paper describes the analysis of the electron count of a camera system for a satellite application and then of the signal level for the interface design between CCD and A/D converter using two methods. One is a quantitative assessment based on the design parameters of the camera system, the other method compares the design parameters in comparison with those of the existing camera system in orbit for relative counting of the electrons and the signal level estimation. Chapter 2 describes the radiometry of the camera system of a satellite application to show equations for electron counting, Chapter 3 describes a camera system briefly to explain the data flow of imagery information from CCD and Chapter 4 explains the two methods for the analysis of the number of electrons and the signal level. Then conclusion is made in chapter 5.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.11
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• pp.86-94
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• 2012

In this paper we propose a hardware architecture of high-speed CGH (computer generated hologram) generation processor, which particularly reduces the number of memory access times to avoid the bottle-neck in the memory access operation. For this, we use three main schemes. The first is pixel-by-pixel calculation rather than light source-by-source calculation. The second is parallel calculation scheme extracted by modifying the previous recursive calculation scheme. The last one is a fully pipelined calculation scheme and exactly structured timing scheduling by adjusting the hardware. The proposed hardware is structured to calculate a row of a CGH in parallel and each hologram pixel in a row is calculated independently. It consists of input interface, initial parameter calculator, hologram pixel calculators, line buffer, and memory controller. The implemented hardware to calculate a row of a $1,920{\times}1,080$ CGH in parallel uses 168,960 LUTs, 153,944 registers, and 19,212 DSP blocks in an Altera FPGA environment. It can stably operate at 198MHz. Because of the three schemes, the time to access the external memory is reduced to about 1/20,000 of the previous ones at the same calculation speed.

• Proceedings of the KIEE Conference
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• 2007.04a
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• pp.58-60
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• 2007

Magnetic Resonance Imaging(MRI) has become a very widely used medical procedur e. Clo.sed and open systems are typically used with static magnetic fields at or below 2 Tesla. BWhole body SAR(specific absorbsion rate) is the value of SAR averaged over the entire body of the patient over any period of 15 minutes. Head SAR is the value of SAR averaged over the head of the patient for any period of 10 minutes. SAR is a measure of the absorption of electromagnetic energy in the body' (typically in watts per kilogram (W/kg)). The normal operating mode comprises values of head SAR not higher than 3 W/kg. The second level controlled operating mode comprises values higher than 3 W/kg. Current FDA guidance limits the SAR in the whole body. including the head to a range of 1.5 to 4.0 W/kg, depending on the patient's clinical condition. SAR, limit restrictions are incorporated in all MRI systems. and domestic' s guidance limits the SAR in a part body. including the head to 3.2w/kg and less. The purpose of this study is to evaluate on change of head SAR in using MRI pulse sequence and to check if exceed 3.2(w/kg) level in domestic a part exposure through measured head SAR. 23 patient's the average head SAR of pulse sequence is that T2WI sagittal is 0.5375. T2WI axial(FSE) is 0.4817, T1WI axial(SE) is, 0.8179. FLAIR axial is 0.4580. GRE axial is 0.0077, Diffusion is 0.0824w/kg. The head SAR exposed per patient was proved 2.3845w/kg less than the international standard. Coefficient of correlation for the relations body weight and SAR or for the relations ETL(echo train length) and SAR is 1 value. Coefficient of correlation for the relations between TR(time to repeat) and SAR is -0.602 value. so SAR increased relative to weight body and ETL. But the relations between TR and SAR is negative definite.

• Earthquakes and Structures
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• v.11 no.6
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• pp.1101-1121
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• 2016

Base isolation, one of the popular seismic protection approaches proven to be effective in practical applications, has been widely applied worldwide during the past few decades. As the techniques mature, it has been recognised that, the biggest issue faced in base isolation technique is the challenge of great base displacement demand, which leads to the potential of overturning of the structure, instability and permanent damage of the isolators. Meanwhile, drain, ventilation and regular maintenance at the base isolation level are quite difficult and rather time- and fund- consuming, especially in the highly populated areas. To address these challenges, a number of efforts have been dedicated to propose new isolation systems, including segmental building, additional storey isolation (ASI) and mid-storey isolation system, etc. However, such techniques have their own flaws, among which whipping effect is the most obvious one. Moreover, due to their inherent passive nature, all these techniques, including traditional base isolation system, show incapability to cope with the unpredictable and diverse nature of earthquakes. The solution for the aforementioned challenge is to develop an innovative vibration isolation system to realise variable structural stiffness to maximise the adaptability and controllability of the system. Recently, advances on the development of an adaptive magneto-rheological elastomer (MRE) vibration isolator has enlightened the development of adaptive base isolation systems due to its ability to alter stiffness by changing applied electrical current. In this study, an innovative semi-active storey isolation system inserting such novel MRE isolators between each floor is proposed. The stiffness of each level in the proposed isolation system can thus be changed according to characteristics of the MRE isolators. Non-dominated sorting genetic algorithm type II (NSGA-II) with dynamic crowding distance (DCD) is utilised for the optimisation of the parameters at isolation level in the system. Extensive comparative simulation studies have been conducted using 5-storey benchmark model to evaluate the performance of the proposed isolation system under different earthquake excitations. Simulation results compare the seismic responses of bare building, building with passive controlled MRE base isolation system, building with passive-controlled MRE storey isolation system and building with optimised storey isolation system.