• Journal of Electrical Engineering and Technology
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• 제12권2호
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• pp.852-857
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• 2017

In this paper, measurements of ion mobility were performed in oxygen at gas pressures of 44.52 - 101.19 kPa using the drift tube method. Over this pressure range, mobility values were within the limits of 1.796 to $3.821cm^2{\cdot}V^{-1}{\cdot}s^{-1}$ were determined and ion mobility shown to decrease non-linearly with increasing gas pressure towards a certain level of saturation. Ion mobility measured in air was lower than that measured in oxygen at the same gas pressure. Finally, a parameter correction method for calibrating the relationship between the ion mobility and gas pressure in oxygen was proposed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권6호
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• pp.867-872
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• 2016

We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semiconductor-heterojunction field-effect transistors (recessed-MOS-HFET) with $SiO_2$ gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was $380cm^2/V{\cdot}s$ near the threshold voltage. The effective channel mobility at the on-state bias condition was $115cm^2/V{\cdot}s$ at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.

• 센서학회지
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• 제6권6호
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• pp.483-490
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• 1997

Thin film Si has been used in sensors, radiation detectors, and solar cells. The carrier mobility of thin film Si influences the device behavior through its frequency response or time response. Since poly-Si shows the higher mobility value, a-Si:H films on Mo substrate were subjected to various crystallization treatments. Consequently, we need to find an appropriate method in mobility measurement before and after the anneal treatment. This paper investigates the carrier mobility improvement with anneal treatments and summarizes the mobility measurement methods of the a-Si:H and poly-Si film. Various techniques were investigated for the mobility determination such as Hall mobility, HS, TOF, SCLC, TFT, and TCO method. We learned that TFT and TCO method are suitable for the mobility determination of a-Si:H and poly-Si film. The measured mobility was improved by $2{\sim}3$ orders after high temperature anneal above $700^{\circ}C$ and grain boundary passivation using an RF plasma rehydrogenation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.51-54
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• 1996

This paper reports the studies of the inversion layer mobility in p-channel Si MOSFET's under hot-carrier degradated condition. The validity of relationship of hot carrier degradations between the surface effective mobility and field effect mobility and are examined. The effective mobility(${\mu}$$\_$eff/) is derived from the channel conductances, while the field-effect mobility(${\mu}$$\_$FE/) is obtained from the transconductance. The characteristics of mobility curves can be divided into the 3 parts of curves. It was reported that the mobility degradation is due to phonon scattering, coulombic scattering and surface roughness. We are measured the mobility slope in curves with DC-stress [V$\_$g/=-3.1v]. It was found that the mobility(${\mu}$$\_$eff/ and ${\mu}$$\_$FE/) of p-MOSFET's was increased by increasing stress time and decreasing channel length. Because of the increasing stress time and increasing V$\_$g/ is changed oxide reliability and increased vertical field.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.26-32
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• 1998

We have studied how the characteristics degradation between effective mobility and field effect mobility of gate channel in p-MOSFET's affects the gate channel length being follow by increased stress time and increased drain-source voltage stress. The experimental results between effective and field-effect mobility were analyzed that the measurement data are identical at the point of minimum slope in threshold voltage, the other part is different, that is, the effective mobility it the faster than the field-effect mobility. Also, It was found that the effective and field-effect mobility. Also, It was found that the effective and field-effect mobility of p-MOSFET's with short channel are increased by decreased channel length, increased stress time and increased drain-source voltage stress.

• 전기전자학회논문지
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• 제13권4호
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• pp.15-21
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• 2009

IETF에서 제안된 네트워크 기반의 이동성 지원 방식인 Proxy Mobile IP는 이동 단말이 아닌 LMA(Local Mobility Anchor)와 MAG(Mobile Access Gateway)등의 네트워크 요소가 이동성 지원 기능을 수행하기 때문에 단말 기반의 이동성 지원 방식인 MIP의 문제점을 해결하고 MIP보다 향상된 핸드오버 성능을 보인다. 그러나 여전히 PMIP은 MIP와 마찬가지로 IP의 Best Effort Service를 기반으로 하기 때문에 다양한 실시간 멀티미디어 서비스에 대한 QoS를 보장하지 못한다. 이러한 문제를 해결하기 위해 본 논문에서는 MPLS 네트워크에서 PMIP기반의 이동성 지원 기술을 적용하여 이동성과 QoS의 보장을 모두 제공하는 네트워크 구조 및 핸드오버 절차를 제안한다.

• 전기학회논문지
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• 제63권7호
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• pp.987-993
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• 2014

Pitching machines have been around for many years for casual amusement purpose or professional athletes' training usage, and so forth. The current pitching machines are usually built on the firm ground and do not have any mobility function. In this paper, we develop a pitching machine that has both ball-shooting and mobility functions. Our developed pitching machine consists of two parts. The upper body part has a function of shooting a ball using two DC motors and the lower body part has a function of mobility like mobile robots by using two wheels governed by DC motors. All these functions are operated wirelessly by Android smartphones via bluetooth. The control of each DC motor is done by ${\epsilon}$-PID control method in which the gain tuning is simplied by using a single parameter ${\epsilon}$. Simulation and actual experiment show that our developed pitching machine has both nontrivial shooting and mobility features.

• 전자공학회논문지
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• 제53권8호
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• pp.13-18
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• 2016

사물 인터넷 (IoT : Internet of things) 환경에서 여러 종류의 스마트 디바이스들은 스마트 헬스케어 서비스와 같은 원격 모니터링 서비스를 제공하기 위해 4G/5G, WiBro, 블루투스 등의 다양한 네트워크 기술을 통해 인터넷에 연결된다. IETF Mobile IP 기반의 대부분의 국제표준 인터넷 이동성 관리 기술은 IoT 환경에서 디바이스들이 가지고 있는 제한적인 전력, 제한적인 CPU 처리 및 메모리 능력 및 과도한 시그널링 오버헤드로 인해 사물인터넷 환경에 적합하지 않다. 본 논문에서는 IoT 환경에서 신뢰성있는 이동성 관리를 위해 IETF CoAP에 기반한 새로운 이동성관리 프로토콜인 CoMP (CoAP-based Mobility Management Protocol)를 제시한다. CoMP는 Constrained 환경에서도 신뢰성 있게 이동성관리를 제공할 수 있는 장점을 제공한다. CoMP의 구조 및 알고리즘을 제시하고, 마지막으로 수학적 분석과 시뮬레이션을 사용하여 성능평가를 하였다.

• 전력전자학회논문지
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• 제26권5호
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• pp.334-341
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• 2021

Operation modes and control strategies for single-phase mobility charging station utilizing photovoltaic (PV) generation and energy storage systems (ESS) are proposed. This approach generates electric power from PV to transmit the mobility, ESS, and then transfer it to the grid when surplus electric power is generated during daytime. However, the PV power cannot be generated during night-time, and ESS and the mobility system can be charged using grid power. The power balance control based on power fluctuations and the resonant current control that can compensate harmonic components have been added to increase the stability of the system. The MATLAB/Simulink simulation was carried out to verify the proposed control method, and the 2-kW single-phase grid-tied PV-ESS smart mobility charger was built and tested.

• 한국전기전자재료학회논문지
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• 제34권4호
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• pp.246-250
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• 2021

TFTs technologies with as high mobility as possible is essential for high-performance large displays. TFTs using nanocrystalline silicon thin films can achieve higher mobility. In this work, the change of the crystalline volume fraction at different hydrogen dilution ratios was investigated by depositing nc-Si:H thin films using PECVD. It was observed that increasing hydrogen dilution ratio increased not only the crystalline volume fraction but also the crystallite size. The thin films with a high crystalline volume fraction (55%) and a low defect density (10¹⁷ cm^-3·eV^-1) were used as top gate TFTs channel layer, leading to a high mobility (55 cm²/V·s). We suggest that TFTs of high mobility to meet the need of display industries can be benefited by the formation of thin film with high crystalline volume fraction as well as low defect density as a channel layer.