• 전자공학회논문지 IE
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• v.49 no.2
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• pp.18-23
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• 2012

A method to determine the equivalent circuits of broadband ultrasound transducers is necessary for designing filters that match the impedances of the transducer and the analysis of the transducer. A method is proposed to determine the equivalent circuits of broadband transducers with 2 resonances in the frequency band of interest. The circuit parameters are estimated by iterative Levy method with the measured electrical conductance data. The method is illustrated by computing the conductance and susceptance of the equivalent circuits of 3 types of broadband transducers. The equivalent circuit of a transducer.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1105-1108
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• 2003

In this paper, we have fabricated the hydrogenated n-channel polysilicon thin film transistor (TFT) with LDD structure and have analyzed the hot carrier degradation characteristics by electrical stress. We have compared the threshold voltage (Vth), sub-threshold slope (S), and trans-conductance (Gm) for devices with LDD (Lightly Doped Drain) structure and non-LDD at same active sizes. We have analyzed the hot carrier effects by the hydrogenation in devices. As a analyzed results, the threshold voltage, sub-threshold slope for n-channel poly-si TFT were increased, trans-conductance was decreased. The effects of hydrogenation in n-channel poly-si TFT with LDD structure were shown the lower variations of characteristics than devices of the non-LDD structure with nomal process.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.1
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• pp.88-92
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• 2010

Bottom gate and top gate field-effect transistor based carbon nanotube(CNT) were fabricated by CMOS process. Carbon nanotube directly grown by thermal chemical vapor deposition(CVD) using Ethylene ($C_2H_4$) gas at $700^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, bottom gate and top gate field-effect transistor successfully modulated the conductance of FET device.

• 전기의세계
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• v.30 no.10
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• pp.645-654
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• 1981

A technique has been proposed for fabricating a submicron channel vertical V-groove JFET using standard photolithography. A finite element numerical simulation of the V-groove JFET operation was performed using a FORTRAN progrma run on a Cyber-174 computer. The numerical simulation predicts pentode like common source output characteristics for the p$^{+}$n Vertical V-groove JFET with maximum transconductance representing approximately 6 precent of the zero bias drain conductance value and markedly high drain conductance at large drain voltages. An increase in the acceptor concentration of the V-groove JFET gate was observed to cause a significant increase in the transconductance of the device. Therefore, as above mentioned, this paper is study on the analysis of a Vertical V-groove Junction Field Effect Transistor with Finite Element Method.d.

• Proceedings of the KOSOMBE Conference
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• v.1991 no.11
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• pp.126-128
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• 1991

Skin conductance level(SCL) was measured in 51 paralytic subjects. The measurements are made on the back of the second metacarpal according to the Zhang's method. Physical constitution is classified based on the Lee's physical constitution theory. The following tendencies were observed. In paralytic examinees, SCL of micro-positive physical constitution is generally higher than that of micro-negative and macro-negative physical constitution. And as Setting old, SCL is slightly decreased.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.313-318
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• 2007

Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin $SiO_{2}$ layer. The carbon nanotubes (CNTs) directly grown using thin Fe film as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics, including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs may be competitive with Si MOSFET for future nanoelectronic applications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.8-13
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• 2007

During the last years, there has been an increased interest in the new energy such as photovoltaic(PV) system from the viewpoint of environmental pollution. In this regard, this paper estimates the power quality of grid-connected PV system. As the maximum power operating point(MPOP) of photovoltaic(PV) power systems alters with changing atmospheric conditions, the efficiency of maximum power point tracking(MPPT) is important in PV power systems. Moreover, grid-connected PV system occurs some problems such as voltage inequality and harmonics. Therefore, this paper presents the results of a grid-connected PV system modeling that contains incremental conductance MPPT controller by PSCAD/EMTDC simulator and investigates the influence that can occur in the grid-connected PV system from aspect of power quality, i.e. voltage drop, total harmonic distortion(TDD) and total demand distortion(TDD). For the case study, the measured data of the PV way in Cheongwadae, Seoul, Korea is used.

• Carbon letters
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• v.14 no.4
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• pp.255-258
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• 2013

Flexible transparent conducting films (TCFs) were fabricated by dip-coating single-wall carbon nanotubes (SWCNTs) onto a flexible polyethylene terephthalate (PET) film. The amount of coated SWCNTs was controlled simply by dipping number. Because the performance of SWCNT-based TCFs is influenced by both electrical conductance and optical transmittance, we evaluated the film performance by introducing a film property factor using both the number of interconnected SWCNT bundles at intersection points, and the coverage of SWCNTs on the PET substrate, in field emission scanning electron microscopic images. The microscopic film property factor was in an excellent agreement with the macroscopic one determined from electrical conductance and optical transmittance measurements, especially for a small number of dippings. Therefore, the most crucial factor governing the performance of the SWCNT-based TCFs is a SWCNT-network structure with a large number of intersection points for a minimum amount of deposited SWCNTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.582-586
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• 2013

In this paper, a simple macro model of n-channel MOSFET with dual workfunction gate (DWFG) structure is proposed. The DWFG MOSFET has higher transconductance and lower drain conductance than conventional MOSFET. Thus analog circuit design using the DWFG MOSFET can improve circuit characteristics. Currently, device models of the DWFG MOSFET are insufficient, so simple series connected two MOSFET model is proposed. In addition, a two stage operational amplifier using the proposed DWFG MOSFET macro model is designed to verify the model.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.12
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• pp.1886-1891
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• 2012

In this paper, the analytical models for the electrothermal feedback of a ${\mu}$-bolometer focal plane array(FPA) are proposed and applied to the conceptually designed FPA to investigate the electrothermal feedback effect on bolometer FPA signal. The temperature and resistance change of the ${\mu}$-bolometer by the electrothermal feedback(ETF) model are increased upto 20 and 35.7 % of those of no feedback case, respectively, while those by the effective thermal conductance(ETC) model increased 8.5 and 15.1 %. The integration current and output voltage of a CTIA used as an column amplifier of FPA are also increased upto 41.6 and 32.4 % by the ETF model, while increased upto 17.2 and 13.5 % by the ETC model. The proposed models give more accurate temperature change, accordingly larger signal than no feedback considering case. Electrothermal feedback effect should be considered to design a high performance and high density ${\mu}$-bolometer FPA. The proposed models are very useful to investigate the transient thermal analysis, also considered to be useful to predict the responsivity and dynamic range of ${\mu}$-bolometer FPAs.