• Korean Journal of Agricultural and Forest Meteorology
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• v.16 no.4
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• pp.267-273
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• 2014

This study is to compare drought-resistance and to find the permanent wilting coefficient of Syringa Dilatata, Euonymus Japonica, Ligustrum Obtusifolium, Nandina Domestica, which are commonly used for rooftop garden due to their relatively strong drought resistance To compare the drought resistance precipitation was blocked from June 4, 2013 to July 20, 2013. During this time, the relative water content, specific electrical conductance, and water potential were measured every seven days and permanent wilting coefficients were investigated. Two days after precipitation was blocked, the relative water content in leaves were measured as follows: Ligustrum Obtusifolium 91.3%, Syringa Dilatata 92.9%, Nandina Domestica 91.2%, and Euonymus Japonica 90.1% respectively. After 28 days, relative water contents of leaves were reduced greatly 60.2% for Ligustrum Obtusifolium and 67.8% for Syringa Dilatata, but Nandina Domestica and Euonymus Japonica's reduced to 80.1% and 81.7% respectively. Permanent wilting coefficient was Ligustrum Obtusifolium 3.1%, Syringa Dilatata 2.1%, Nandina Domestica 1.6% and Euonymus Japonica 0.7%. In other words, the above four tree species are strong in drought resistance and Euonymus Japonica's drought resistance is the strongest while Nandina Domestica, Syringa Dilatata, Ligustrum Obtusifolium follow in that order.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.327-334
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• 2002

Fine particles of $SnO_2$ were fabricated by the sol-gel powder processing using tine(II) chloride dihydrate($SnCl_2{\cdot}2H_2O$) and ethanol($C_2H_5OH$) as raw materials. The powders were investigated about the properties and electrical sensing. Gel powders were fabricated by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_2$ phase was increased below $600^{\circ}C$ due to the elimination of volatile components, and the $SnO_2$ phase was almost completed by the heat treatment at $700^{\circ}C$ for 30min. The grain sizes were about 30nm below $700^{\circ}C$, and it showed the narrow distribution of the grain sizes. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_2$ was showed the intrinsic behaviour of semiconducting ceramics above at $450^{\circ}C$. The constant conductance was observed in the temperature range of $200{\sim}450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.

• The Journal of Engineering Geology
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• v.10 no.1
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• pp.51-62
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• 2000

The $CO_2$-richrich water pumps or springs out at two sites (Sinchon and Kohran) consisting of Cretaceous sedimentary rocks in Kyungpook area. The water has been long known as its soda pop-liketaste and therapeutic effect against calcium deficit, stomach and skin troubles, etc. The water arecharacterized by a high $CO_2$ concentration $(P_{CO2}=0.29~l.01 atm)$ and electrical conductance (1,093~2,810$\mu$S/cm). The $CO_2$-rich water belongs to Ca(Na)-$HCO_3$ type in chemical classification. The contents of Ca, Mg, Na, HCO$_3$ and Fe of $CO_2$-rich water show much higher values than those of general groundwater Environmental isotopic data $(^2H/^1H, ^{18}O/^{16}O and ^3H/^1H)$ indicate that the water is ofmeteoric origin recharged after 1950s. The $CO_2$ in the springs seems to be originated from deep-seatedsource related to acidic porphyry and granite nearby sedimentary rocks. Carbonate minerals and albiteare likely to be the major source minerals of the dissoved inorganic constituents in the $CO_2$-rich water.The equilibrium state between major minerals and $CO_2$-rich water was calculated by a thermodynamicprogram.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.371-372
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• 2008

Many kinds of electrodes have been developed in various forms and shapes for measurement of bio potential signal. Textile electrode has benefit of collect long tenn data monitoring because of it is non-consciousness, convenient and do not occur skin irritation. However, It is very difficult to acquire available data due to high impedance of electrode and unstable skin-electrode contact which generate motion artifact. Also snap button which usually used as mediator between textile and measurement device cause change of electrical characteristics. In this paper, we inflated textile electrode to stabilize contact and add conductive silver paste between textile and snap button to improve conductance. To compare the performance of two methods, flat or inflated and add conductive paste or not, four types of electrodes are tested on each impedance and SNR by ECG measurement. In result, the first type electrode which flat and non-conductive paste showed the worst performance and the last type electrode which is inflated shape and contain conductive paste show the best performance.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.57-62
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• 2011

We have studied the electrical and magnetic transport properties of tunneling device with FePt magnetic quantum dots. The FePt nanoparticles with a diameter of 8~15 nm were embedded in a $SiO_2$ layer through thermal annealing process at temperature of $800^{\circ}C$ in $N_2$ gas ambient. The electrical properties of the tunneling device were characterized by current-voltage (I-V) measurements under the perpendicular magnetic fields at various temperatures. The nonlinear I-V curves appeared at 20 K, and then it was explained as a conductance blockade by the electron hopping model and tunneling effect through the quantum dots. It was measured also that the negative magneto-resistance ratio increased about 26.2% as increasing external magnetic field up to 9,000 G without regard for an applied electric voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.530-530
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• 2012

Many practical applications of carbon nanotubes(CNTs) have been proposed and there have been attempts to utilize CNT films as transparent electrodes for solar cells and displays. Our group has considered the use of the CNT film as a thin film heater (TFH) and proposed it for the first time and reported the thermal behavior of the TFH made of single walled CNTs. However, due to the relatively high electrical resistance of the CNT film, using the TFH in application areas requiring high heat flux has been a difficult problem. To overcome this obstacle, we adopted a 'branch electrodes' concept to increase the film conductance dramatically. If two branch electrodes are inserted into a TFH whose original electrical resistance is R, the total resistance will be reduced to R/9. Because of the increased aspect ratio, the resistance of each segmented TFH will be reduced to R/3. Furthermore, since they are connected in parallel, the total resistance reduces to R/9. This could be extended to n branch electrodes, and the total resistance of the film will be reduced to R/(n+1)2, if the resistance of electrodes are negligibly small. We fabricated the heaters with different number of branch electrodes. The number of branch electrodes of the fabricated heaters are 0, 2, 4, 8 and their electrical resistance are 101.4, 39.5, 20.0, $15.4{\Omega}$, respectively. We applied 20V to each heater and monitored the temperature variations. We could achieve high heating temperature even with low voltage supply. This technique could be applied to relevant industrial applications which need high power film heater.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1885-1890
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• 2013

In this paper, the electrical properties of nanoscale junctionless p-channel MuGFET at cryogenic temperature have been analyzed experimentally. The experiment was performed using a cryogenic probe station which uses the liquid Helium. It has been observed that the drain current oscillation at low drain voltage and cryogenic temperature was more pronounced in junctionless transistor than in accumulation mode transistor. The reason for more marked oscillation is due to the smaller electrical cross section area of the inversion channel which is formed at the center of silicon film in junctionless transistor. It was also observed that the drain current and maximum transconductance were increased as the measurement temperature increased. This is resulted from the increase of hole mobility and the decrease of the threshold voltage as the measurement temperature increases. The drain current oscillation due to the quantum effects can be occurred up to the room temperature when the device size scales down to the nanometer level.

• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.155-158
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• 2017

In this paper, ZnO Thin Film Transistors (TFTs) were fabricated by a sol-gel method using a low-temperature process, and their physical and electrical characteristics were analyzed. To lower the process temperature to $200^{\circ}C$, we used a zinc nitrate hydrate ($Zn(NO_3)_2{\cdot}xH_2O$) precursor. Thermo Gravimetric Analyzer (TGA) analysis showed that the zinc nitrate hydrate precursor solution had 1.5% residual organics, much less than the 6.5% of zinc acetate dihydrate at $200^{\circ}C$. In the sol-gel method, organic materials in the precursor disrupt formation of a high-quality film, and high-temperature annealing is needed to remove the organic residuals, which implies that, by using zinc nitrate hydrate, ZnO devices can be fabricated at a much lower temperature. Using an X-Ray Diffractometer (XRD) and an X-ray Photoelectron Spectrometer (XPS), $200^{\circ}C$ annealed ZnO film with zinc nitrate hydrate (ZnO (N)) was found to have an amorphous phase and much more oxygen vacancy ($V_o$) than Zn-O bonds. Despite no crystallinity, the ZnO (N) had conductance comparable to that of ZnO with zinc acetate dihydrate (ZnO (A)) annealed at $500^{\circ}C$ as in TFTs. These results show that sol-gel could be made a potent process for low-cost and flexible device applications by optimizing the precursors.