• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.353-359
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• 2012

A highly efficient charge pump that minimizes the reverse charge sharing current (in short, reverse current) is proposed. The charge pump employs auxiliary capacitors and diode-connected MOSFET along with an early clock to drive the charge transfer switches; this new method provides better isolation between stages. As a result, the amount of reverse current is reduced greatly and the clock driver can be designed with reduced transition slope. As a proof of the concept, a 1.1V-to-9.8 V charge pump was designed in a $0.35{\mu}m$ 18 V CMOS technology. The proposed architecture shows 1.6 V ~ 3.5 V higher output voltage compared with the previously reported architecture.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.87-90
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• 2005

$SiO_2$ via-hole etching with a high aspect ratio is a key process in fabricating ULSI devices; however, accumulated charge during plasma etching can cause etching stop, micro-loading effects, and charge build-up damage. To alleviate this concern, charge-up damage sensor was fabricated for the ultimate goal of real-time monitoring of accumulated charge. As an effort to reach the ultimate goal, fabricated sensor was used for electrical potential measurements of via holes between two poly-Si electrodes and roughly characterized under various plasma conditions using statistical design of experiment (DOE). The successful identification of potential difference under various plasma conditions not only supports the evidence of potential charge-up damage, but also leads the direction of future study.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.10 no.3
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• pp.78-85
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• 1996

This paper experience the mechanism for the electret of polyethyleneterephthalate(PET) by using surface potentail measurement means. We investigated the internal charge production and becoming week by evaporating electrode in sample structure of electret coexist with hetero charge and homo charge, as the study based on two charge theory. We expects that the hetero charge consists of the dipole and ion displacement of internality, the homo charge consists of injected charge of externality.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.666-669
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• 1993

The space charge fields, including intermode apace charge fields in photorefractive material with two impurities are obtained for the small light intensity at large modulation depth, and their implication of high-capacity volume holographic interconnection are presented. In the following data regions the effect of intermode space charge fields are suppresed and the criteria for optimal implementation of volume holographic interconnections are satisfied.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.167-173
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• 2017

In this paper, the characterization of the vertical position of trapped charges in the charge-trap flash (CTF) memory is performed in the novel CTF memory cell with gate-all-around structure using technology computer-aided design (TCAD) simulation. In the CTF memories, injected charges are not stored in the conductive poly-crystalline silicon layer in the trapping layer such as silicon nitride. Thus, a reliable technique for exactly locating the trapped charges is required for making up an accurate macro-models for CTF memory cells. When a programming operation is performed initially, the injected charges are trapped near the interface between tunneling oxide and trapping nitride layers. However, as the program voltage gets higher and a larger threshold voltage shift is resulted, additional charges are trapped near the blocking oxide interface. Intrinsic properties of nitride including trap density and effective capture cross-sectional area substantially affect the position of charge centroid. By exactly locating the charge centroid from the charge distribution in programmed cells under various operation conditions, the relation between charge centroid and program operation condition is closely investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.84-87
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• 2001

Space charge formation at high temperature was investigated in several polymers using pulsed electro-acoustic (PEA) method. In SXLPE, homocharge is found and increased as an increase of temperature. In a charge of polarity of poling voltage(positive to negative), space charge mainly cause of hole injection. In Ionomer, heterocharge is found because of ion. As an increase of temperature heterocharge is also increased. In PET, As an increase of temperature homocharge is decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.287-290
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• 1996

The behaviour of interfacial charge in EPDM/XLPE laminates has been investigated by measuring charge distributions using a pulsed electroacoustic (PEA) method. Homocharge develops in EPDM while heterocharge develops in XLPE. A broadly interfacial charge peak is observed at EPDM/XLPE interface. When EPDM /XLPE laminates are treated in high temperature for different times, the amount and polarity of interfacial charge are changed.

• Proceedings of the KIEE Conference
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• 2002.11d
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• pp.304-308
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• 2002

This paper studies stand-alone photovoltaic array for solar lighting lamp. The solar lighting lamp has PV modules, batteries. and charge & discharge system. The charge efficiency is improved for the control of each battery which is divided the charge from the discharge to change the structure of existing solar lighting lamp charge & discharge system. so, the charge and discharge times are reduced of 50%. and the depth of discharge control can be controlled in the discharge cut off voltage. This can be effective of battery use. If a battery is out of order, this system can be executed for a regular period. so we saved the repair cost and developed of system's stabilization. It is possible economical effect to apply for solar lighting lamp used photovoltaic array.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.653-656
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• 2005

New charge-recycling structure and driving scheme for TFT-LCD source-driver IC application are proposed. The number of additional switches for the charge recycling is greatly reduced. An experimental prototype 6-bit source driver with five-level seven-phase charge recycling implemented in a $0.35-{\mu}m$ CMOS technology demonstrates that the quiescent current is only 3.1 mA, dynamic power saving is 75 %, and the settling time, which includes the charge-recycling and data driving, is within 25 $25{\mu}s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.254-255
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• 2008

In this study, electrical properties of polyethylene of raised temperature resistance (PE-RT) have been studied through an examination of AC conductivity, dielectric constant, and space charge distributions. A dielectric constant was investigated by Dielectric Analyzer (DEA). Measurements of space charge distributions for PE-RT were carried out using Pulsed Electroacoustic (PEA) techniques, and it was possible to observe the negative charge near the cathode overlapped with the positive induced charge peak, the polarity of which remains unchanged after a short circuit.