• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1732-1734
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• 2001

The purpose of this experiment was to develope Triggered Vacuum Switch(TVS) and to improve understanding of the high current vacuum arc phenomena in the TVS. The TVS has an array of rods of alternate polarity in which a fixed gap spacing is maintained between the rods. The cross section of each rod has trapezoidal shape. Breakdown of the TVS produced high current vacuum arc plasma. A spectroscopic measurement was performed over 20 kA peak current in the center of electrodes, in the vicinity of cathode, and outside electrodes. The electrode material tested was Fe. Measured Fe spectrum range was from 200 nm to 900 nm. Measurement result showed that over 90 percent of the charge states were FeII and the others were FeI and FeIII. The electron temperature was determined from the relative line intensity ratio methode of FeII system by assuming the local thermal equilibrium(LTE). The electron temperature at the center of electrodes was measured as 1.5 eV at 26 kA peak current. The electron temperature varied with its peak current. Intensity of spectrums is the highest in the vicinity of the cathode. Further we will also present study result of the diode phenomena in the TVS.

• Journal of Power System Engineering
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• v.17 no.1
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• pp.110-115
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• 2013

The electrochemical performance and microstructure of Al-Si, Al-Si/C was investigated as anode for lithium ion battery. The Al-Si nano composite with 5 : 1 at% ratio was prepared by arc-discharge nano powder process. However, some of problem is occurred, when Al nano composite was synthesized by this manufacturing. The oxidation film is generated around Al-Si particles for passivating processing in the manufacture. The oxidation film interrupts electrical chemistry reaction during lithium ion insertion/extraction for charge and discharge. Because of the existence the oxidation film, Al-Si first cycle capacity is very lower than other examples. Therefore, carbon synthsized by glucose ($C_6H_{12}O_6$) was conducted to remove the oxidation film covered on the composite. The results showed that the first discharge cycle capacity of Al-Si/C is improved to 113mAh/g comparing with Al-Si (18.6mAh/g). Furthermore, XRD data and TEM images indicate that $Al_4C_3$ crystalline exist in Al-Si/C composite. In addition the Si-Al anode material, in which silicon is more contained was tested by same method as above, it was investigated to check the anode capacity and morphology properties in accordance with changing content of silicon, Si-Al anode has much higher initial discharge capacity(about 500mAh/g) than anode materials based on Aluminum as well as the morphology properties is also very different with the anode based Aluminum.

• Journal of IKEEE
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• v.10 no.1 s.18
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• pp.10-15
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• 2006

In this paper, a clock and data recovery (CDR) circuit for a serial link with a half rate 4x oversampling phase and frequency detector structure without a reference clock is described. The phase detector (PD) and frequency detector (FD)are designed by 4X oversampling method. The PD, which uses bang-bang method, finds the phase error by generating four up/down signal and the FD, which uses the rotational method, finds the frequency error by generating up/down signal made by the PD output. And the six signals of the PD and the FD control an amount of current that flows through the charge pump. The VCO composed of four differential buffer stages generates eight differential clocks. Proposed circuit is designed using the 0.18um CMOS technology and operating voltage is 1.8V. With a 4X oversampling PD and FD technique, tracking range of 24% at 3.125Gbps is achieved.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.67-75
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• 2007

To improve low sense margin at low voltage, we propose a negatively driven sensing (NDS) scheme and to solve the problem of WL-to-BL short leakage fail, a variable bitline reference scheme with free-level precharged bitline (FLPB) scheme is adopted. The influence of the threshold voltage offset of NMOS and PMOS transistors in a latch type sense amplifier is very important factor these days. From evaluating the sense amplifier offset voltage distribution of NMOS and PMOS, it is well known that PMOS has larger distribution in threshold voltage variation than that of NMOS. The negatively-driven sensing (NDS) scheme enhances the NMOS amplifying ability. The offset voltage distribution is overcome by NMOS activation with NDS scheme first and PMOS activation followed by time delay. The sense amplifier takes a negative voltage during the sensing and amplifying period. The negative voltage of NDS scheme is about -0.3V to -0.6V. The performance of the NDS scheme for DRAM at the gigabit level has been verified through its realization on 1-Gb DDR2 DRAM chip.

• Korean Journal of Environment and Ecology
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• v.18 no.4
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• pp.456-464
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• 2004

KISTI(Korea Institute of Science and Technology Information) has developed the $\boxDr$KISTI-ACOMS(KISTI-Article COntribution Management System)$\boxUl$ as part of the national project for automating the process of processing academic information by societies, in order to convert journals published by academic societies in Korea into an electronic from and make them accessible on the Internet. This system was developed in the year 2001 and has since been distributed to societies free of charge. The number of societies requesting the service has risen recently, which prompted us to take more recommendations of the societies that adopt this system into account in expanding and standardizing the area of service being provided by the system. This paper will investigate the functions of KISTI-ACOMS constructed for use in the Korean Society of Environment and Ecology and list the functions and requirements for the next system to enhance the on-line paper management system.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.3
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• pp.33-40
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• 2010

Multizeros(multiple order zeros) optical beams which belong to the Laguerre-Gaussian beams, have rotational phase and conically-shaped amplitude structures around multizeros points in their phase and amplitude profiles, respectively. Especially, they have their own characteristics that the multizero points do not vanish over free-space propagation. Therefore, they are expected to be adequate for the applications of long-range optical measurement by using their multizero points as optical markers for the deformation sensing. In this paper, fundamental properties of multizeros optical beams for long-range optical measurement applications are investigated and clarified. In particular, the mathematical investigations are described on the characteristics of multizeoros optical beams such as (1) separation of a multizero into isolated single order zeros, (2) topological charge of zeros distribution which are induced by superposing them. And also the outline of a fundamental experiment and its result are explained briefly.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.11
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• pp.1135-1140
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• 2016

The main challenge in designing wearable WBANs is to guarantee the balance of QoS demands in the network with the low power constraints of limited battery powered nodes. Low power devices implanted in or attached to the body should be designed to meet minimum energy requirements due to their limited battery life and be small in size to be easily wearable. In this paper, we propose a method for optimizing channel allocation method that is compatible with the IEEE 802.15.6 standard, enables the maximum amount of power charge at idle, guarantees the QoS of a WBAN, and provides the reliable date transmission between nodes and hubs in the network. Our extensive simulations will show that the method we propose not only maximizes the QoS in packet transmission but also improves the level of energy efficiency.

• Progress in Superconductivity and Cryogenics
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• v.17 no.4
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• pp.30-33
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• 2015

We report the synthesis of Ni-doped $BaFe_2Se_3$ single crystals by using a flux method. X-ray diffraction (XRD) of $Ba(Fe_{1-x}Ni_x)_2Se_3$ shows a gradual peak shift with an increase in the nominal Ni-doping rate, x = 0, 0.05, and 0.10, due to a decrease in unit-cell volume. All samples show a spin glass transition, and temperature dependence of magnetic susceptibility shows a negligible change in the spin-glass transition temperature ($T_g$) with Ni concentration x. The temperature dependence of electrical resistivity for $BaFe_2Se_3$ shows an insulating behavior, and the resistivity value at 295 K and the activation energy ($E_a$) obtained from the Arrhenius plot decrease with increasing x. These results suggest that the Ni doping can be effectively worked as a dopant for electron charge carriers, but is less efficient in controlling the magnetic property, such as spin glass transition, in the $BaFe_2Se_3$ compound.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.207.1-207.1
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• 2014

High-mobility and two dimensional conduction at the interface between two band insulators, LaAlO3 (LAO) and SrTiO3 (STO), have attracted considerable research interest for both applications and fundamental understanding. Several groups have reported the photoconductivity of LAO/STO, which give us lots of potential development of optoelectronic applications using the oxide interface. Recently, a giant photo response of Pd nano particles/LAO/STO is observed in UV illumination compared with LAO/STO sample. These phenomena have been suggested that the correlation between the interface and the surface states significantly affect local charge modification and resulting electrical transport. Water and gas adsorption/desorption can alter the band alignment and surface workfunction. Therefore, characterizing and manipulating the electric charges in these materials (electrons and ions) are crucial for investigating the physics of metal oxide. Proposed mechanism do not well explain the experimental data in various ambient and there has been no quantitative work to confirm these mechanism. Here, we have investigated UV photo response in various ambient by performing transport and Kelvin probe force microscopy measurements simultaneously. We found that Pd nano particles on LAO can form Schottky contact, it cause interface carrier density and characteristics of persistence photo conductance depending on gas environment. Our studies will help to improve our understanding on the intriguing physical properties providing an important role in many enhanced light sensing and gas sensing applications as a catalytic material in different kinds of metal oxide systems.