• Title/Summary/Keyword: Electrical capacitance

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A Numerical Algorithm for Fault Location Estimation Considering Long-Transmission Line (장거리 송전선로를 고려한 사고거리추정 수치해석 알고리즘)

  • Kim, Byeong-Man;Chae, Myeong-Suk;Kang, Yong-Cheol
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.12
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    • pp.2139-2146
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    • 2008
  • This paper presents a numerical algorithm for fault location estimation which used to data from both end of the transmission line. The proposed algorithm is also based on the synchronized voltage and current phasor measured from the PMUs(Phasor Measurement Units) in the time-domain. This paper has separated from two part of with/without shunt capacitance(short/long distance). Most fault was arc one-ground fault which is 75% over [1]. so most study focused with it. In this paper, the numerical algorithm has calculated to distance for ground fault and line-line fault. In this paper, the algorithm is given with/without shunt capacitance using II parameter line model, simple impedance model and estimated using DFT(Discrete Fourier Transform) and the LES(Least Error Squares Method). To verify the validity of the proposed algorithm, the EMTP(Electro- Magnetic Transient Program) and MATLAB did used.

Simulations of Pixel Characteristics for Large Size and High Qualify TFT-LCD using a new sophisticated Capacitance Formulas (새로운 정전용량 계산식물 이용한 대면적 .고화질 TFT-LCD의 화소 특성 시뮬레이션)

  • 윤영준;정순신;김태형;박재우;최종선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.613-616
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    • 1999
  • An active-matrix LCD using thin film transistors (TFTs)has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed, The set of models which is adopted from VLSI interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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Capacitance Characteristics of GaAs MESFET will Temperatures (온도 변화에 따른 GaAs MESFET의 정전용량에 대한 연구)

  • 박지홍;김영태;원창섭;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.445-448
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    • 1999
  • In this Paper, we present simple physical model of the Capacitance characteristics for GaAs MESFET\`s in wide temperatures. In this model, gate-source and gate-drain capacitances are represented by analytical expressions which are classified into three different regions for bias voltage. This model contained the temperature dependent variable that is the built-in voltage and the depletion width. Using the equations obtained in this work a submicron gate length MESFET has simulated and theoretical result are in good agreement with the experimental measurement.

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AFM and C-F Properties of Ceramic Thin Film with Annealing Method (열처리 방법에 따른 세라믹 박막의 AFM 및 C-F 특성)

  • Choi, Woon-Shik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.9
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    • pp.598-601
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    • 2015
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9(SBN)$ thin films are deposited on Pt electrode($Pt/Ti/SiO_2/Si$) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was $300^{\circ}C$. SBN thin films were annealed at $500{\sim}700^{\circ}C$ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature($600^{\circ}C$) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.7{\mu}F/cm^2$ was obtained by annealing temperature($700^{\circ}C$). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1~1,000 kHz.

Electrochemical Properties of Electric Double Layer Capacitor with PolyanilineComposite (Polyaniline Composite 전극을 사용한 전기 이중층 캐패시터의 전기화학적 특성)

  • 강광우;김종욱;구할본
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.370-373
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    • 1999
  • The purpose of this study is to research and develop PAn composite electrode for EDLC. EDLC cell of PAn composite electrode with 1M LiClO$_4$/PC brings out good capacitor performance below 4.0V. The radius of semicircle of PAn composite electrode adding 15wt% SP270 was absolutely small. The total resistance of EDLC cell mainly depended on internal resistance of the electrode. The discharge capacitance of PAn composite with 15wt% SP270 in 1st and 200th cycles was 42 and 42 F/g at current density of 1mA/cm$^2$. The capacitance of PAn composite with 15wt%. SP270 capacitor was larger than that of PAn capacitor without SP270. The coulombic efficiency of EDLC at discharge process of 1 and 200 cycles were 94 and 100% respectively. PAn composite EDLC with 15wt% SP270 content showed good capacitance and stability with cycling.

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Reactive Ion Etching Process of Low-K Methylsisesquioxane Insulator Film (저유전율 물질인 Methylsilsesquioxane의 반응 이온 식각 공정)

  • 정도현;이용수;이길헌;김대엽;김광훈;이희우;최종선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.173-176
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    • 1999
  • Continuing improvement of microprocessor performance involves in the devece size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. Becase of pattering MSSQ (Methylsilsequioxane), we use RIE(Reactive ton Etching) which is a good anisotrgpy. In this study, according as we control a flow rate of CF$_4$/O$_2$ gas, RF power, we analysis by using ${\alpha}$ -step, SEM and AFM,

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Change of Capacitance on Maganese Dioxide Electrode for Supercapacitor by Oxidation Treatment (수퍼커패시터용 산화망간전극의 산화처리에 의한 용량 변화)

  • 김한주;홍지숙;신달우;김용철;김성호;박수길
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.946-949
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    • 2000
  • Amorphous MnO$_2$$.$ nH$_2$O in 1M KOH aqueous electrolyte proves to be an excellent electrode for a faradic electrochemical capacitor cycled between -0.5 and +1.0 versus Ag/AgCl. In order to observe morphology and crystalline structure of MnO$_2$powder, we analyzed it by XRD and SEM. The effect of oxidation treatment on MnO$_2$electrode was observed by different oxidation voltages. A maximum capacitance of 364F/g was obtained by 1.1V oxidation treatment. This capacitance was attributed solely to a surface redox mechanism

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Charge/discharge Properties of $V_2O_5$-AC Composite for Supercapacitor (Supercapacitor용 $V_2O_5$-AC Composite의 충방전 특성)

  • 김명산;김종욱;구할본
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.366-369
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    • 1999
  • The purpose of this study is to research and develop V2Os-AC(activated carbon) composite electrode for supercapacitor. Supaercapacitor cell of V2Os-AC composite electrode with 25P70FLiCIO$_{4}$/PC$_{10}$/EC$_{10}$ polymer electrolyte bring out good capacitor Performance below 3V. The discharge capacitance of V2Os-AC(30:70) composite with 70wt.% AC in 1st and 200th cycles was 9.6 and 8.2 F/g at current density of 1m7/cm2. The capacitance of V$_2$O$_{5}$-AC composite with 70wt.% AC capacitor was larger than that of others. The coulombic efficiency of supercapacitor at discharge process of 1 and 200 cycles were 96 and 100%, respectively. V$_2$O$_{5}$-AC composite supercapacitor with 70wt.% AC content showed good capacitance and stability with cycling.ing.ing.

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Properties Changing depends on Substituents or Dopants of Li-Mn oxide material (Li-Mn계 산화물의 치환 및 첨가에 따른 물성 변화)

  • Lee, Dae-Jin;Ji, Mi-Jung;Choi, Byung-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.289-289
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    • 2007
  • Spinel structured $LiMn_2O_4$ is more economic and environmental friendly to be used as commercial active material for secondary battery compared to Co-oxide material active material, but spinel structure of $LiMn_2O_4$ is unstable and its capacitance decreases with increase of cycle. Therefore, the purpose of our sturdy is to improve the stability of $LiMn_2O_4$ spinel structure and increase its capacitance by using substituents or dopants. $LiMn_2O_4$ powder was synthesized by charging substituents or dopants mole fractions, and temperatures. Crystal state, structure and specific surface area of the synthesized powder were measured and also characteried electrochemically by measuring its impedance, charge-discharge capacitance and etc.

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Power output and efficiency of a negative capacitance and inductance shunt for structural vibration control under broadband excitation

  • Qureshi, Ehtesham Mustafa;Shen, Xing;Chang, Lulu
    • International Journal of Aeronautical and Space Sciences
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    • v.16 no.2
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    • pp.223-246
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    • 2015
  • Structural vibration control using a piezoelectric shunt is an established control technique. This technique involves connecting a piezoelectric patch, which is bonded onto or embedded into the vibrating structure, to an electric shunt circuit. Thus, vibration energy is converted into electrical energy and is dissipated through a network of electrical components. Different configurations of shunt have been researched, among which the negative capacitance-inductance shunt has gained prominence recently. It is basically an analog, active circuit consisting of operational amplifiers and passive elements to introduce real and imaginary impedance on the vibrating structure. The present study attempts to model the behavior of a negative capacitance-inductance shunt in terms of power output and efficiency using circuit modeling software. The shunt model is validated experimentally and is used to control the structural vibration of an aluminum beam, connected to a pair of piezoelectric patches, under broadband excitation. The model is also used to determine the optimal parameters of a negative capacitance-inductance shunt to increase the efficiency and predict the voltage output limit of op-amp against the supply voltage.