• Geomechanics and Engineering
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• 제33권1호
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• pp.11-18
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• 2023

This study explores a new energy partitioning approach to determine the fracture toughness of 3-D printed pristine/recycled high density polyethylene (HDPE) blends employing the essential work of fracture (EWF) concept. The traditional EWF approach conducts a uniaxial tensile test with double-edge notched tensile (DENT) specimens and measures the total energy defined by the area under a load-displacement curve until failure. The approach assumes that the entire total energy contributes to the fracture process only. This assumption is generally true for extruded polymers that fracture occurs in a material body. In contrast to the traditional extrusion manufacturing process, the current 3-D printing technique employs fused deposition modeling (FDM) that produces layer-by-layer structured specimens. This type of specimen tends to include separation energy even after the complete failure of specimens when the fracture test is conducted. The separation is not relevant to the fracture process, and the raw experimental data are likely to possess random variation or noise during fracture testing. Therefore, the current EWF approach may not be suitable for the fracture characterization of 3-D printed specimens. This paper proposed a new energy partitioning approach to exclude the irrelevant energy of the specimens caused by their intrinsic structural issues. The approach determined the energy partitioning location based on experimental data and observations. Results prove that the new approach provided more consistent results with a higher coefficient of correlation.

• 대한화학회지
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• 제30권3호
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• pp.273-281
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• 1986

본 연구는 임피던스 파라미터(전기이중층 내의 미분용량 $C_d$, 용핵저향 $R_Q$, 전하이동저항 $R_t$,및 흡착유사용량 $C{\phi}$)를 결정하기 위해 정확한 측정식을 얻는데 주력하낟. 정현파가 정상상태에 있을 때 복소수함수 ${\omega}$중의 허수부분만을 으용하여 구한 전체임피던스식은 낮은 주파수에서 $|Z_{LF}|=1/{\omega}_{1C\phi}{\sqrt{1+{{\omega}_1}^2/{\omega}^2}$에, 높은 주파수에서는 $|Z_{HF}|={\omega}_2/({\omega}_1{\omega}_3C{\phi})({\omega}^2+{{\omega}_2}^2){\sqrt{{({\omega}^2+{\omega}_2{\omega}_3)}^2+{({\omega}_2{\omega}-{\omega_3{\omega})^2}}$에 따름을 나타낸다. 이들 임피던스 파라미터의 계산에 필요한 전체임피던수, 위상각 및 쎌전류값을 .5M $NA_2SO_4$ 또는 1M NaCl, 19.373% 해수, 1M HCl, 1M $KNO_3$ 지지전해질과 이들의 지지전해질내에 각각 $10^{-2}M Kl$ 또는 6mM DBNA를 첨가하여 20~60Hz 범위에서 실험적으로 측정하였다. 본 연구에서 유도한 식은 임피던스 파라미터 $C_d,\;C_{\phi},\;R_t$ 및 $R_Q$의 값들이 각각 $15{\sim}4{\mu}F/cm^2,\;162{\sim}758{\mu}F/cm^2,\;11.5{\sim}57.6ohm{\cdot}cm^2$ 및 $0.5{\times}10^{-2}{\sim}4.1{\sim}10^{-2}\;ohm{\cdot}cm^2$임을 보여준다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.717-722
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• 2004

A design was done, and all characteristic of photodetectr of the web pattern type which a standard process of the Bipolar which Si PIN structure was used in this paper, and was used for the current amplifier design was used, and high-speed, was used as receiving optcal area of high altitude, and the module which had a low dark current characteristic was implemented with one chip with a base. Important area decreases an area of Ie at the time of this in order to consider an electrical characteristic and economy than the existing receiving IC, and performance of a product and confidence are got done in incense. First of all, the receiving IC which a spec, pattern of a wafer to he satisfied with the following electrical optical characteristic that produced receiving IC of 5V and structure are determined, and did one-chip is made. On the other hand, the time when AR layer of double is $Si_{3}N_{4}/SiO_{2}=1500/1800$ has an optical reflectivity of less than $10{\%}$ on an incidence optical wavelength of 660 ,and, in case of photo detector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm. A BJT process is used, and receiving IC running electricity suitable for low voltage and an optical characteristic in minimum 1.8V with a base with two phases is made with one chip. IC of low voltage operates in 1.8V and 3.0V at the same time, and optical link receiving IC is going to be implemented

• 대한전자공학회논문지SD
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• 제44권1호
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• pp.68-75
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• 2007

NFC의 능동동작 모드, 수동동작 모드 및 RFID 동작 모드에 필요한 13.56MHz 트랜스미터와 리시버 및 RFID 태그 동작을 모두 지원하는 단일 칩 NFC 트랜시버를 설계 및 제작하고 동작을 검증하였다. 제안된 NFC 트랜시버는 외부전원 공급이 없어도 RFID 태그가 동작할 수 있도록 이니시에이터와 타겟의 2중 안테나 구조를 가지고 있다. 타겟 안테나는 이니시에이터 안테나의 접지 차폐층을 사용함으로써 이중 안테나의 유효면적이 단일 안테나에 비교해서 동일한 면적을 갖도록 안테나 구조를 제안하였고, 안테나의 선택 동작에 필요한 회로를 제안하였다. 제안된 NFC 단일 칩 트랜시버의 아날로그 전단부 회로는 능동모드와 RFID 리더를 위한 Reader/writer 블록의 트랜스미터와 리시버 회로부, 수동 모드와 태그 모드를 위한 태그 회로부로 구성된다. 태그 회로부는 정류기 및 부하 변조를 위한 수동소자가 포함되어 있으며, 정류기에서 생성되는 전압을 사용하여 외부 전원 없이도 태그 동작이 가능하도록 설계하였다. 제안된 트랜시버는 UART 직렬 인터페이스 회로를 통하여 호스트와 최대 212Kbps로 통신할 수 있다. 제안된 회로는 매그나칩의 0.35um 2-Poly 4-Metal CMOS공정으로 제작되었고, 칩의 유효면적은 $2200um{\times}360um$이다.

• Composites Research
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• 제29권4호
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• pp.167-172
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• 2016

$Co_9S_8/reduced$ graphene (CSRG) has been prepared by a facile two step hydrothermal method and used as a supercapacitor electrode material. It is anticipated that the $Co_9S_8$ and reduced graphene oxide (RGO) would serve as a spacer material to each other to stop the agglomeration and simultaneous contribution of electrical double layer capacitance (RGO) and pseudocapacitance ($Co_9S_8$) would provide high electrochemical properties. The chemical analysis has been done by Fourier transform infrared spectroscopy and the morphology is characterised by field emission scanning electron microscopy. CSRG shows a high electrical conductivity of $98S\;m^{-1}$. The symmetric supercapacitor shows a specific capacitance of ${\sim}728F\;g^{-1}$ with a current density of $2A\;g^{-1}$. CSRG also showed an energy density of $25.2Wh\;kg^{-1}$ with a power density of $1000W\;kg^{-1}$.

• 조명전기설비학회논문지
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• 제29권12호
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• pp.61-67
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• 2015

Certainly, we are living in a true mobile society. At the end of 2014, approximately 40million 560thousand people are subscribed to smartphone services in Korea, using more than 2000MB of mobile data per a person. The use of smartphone is expected to increase. Moreover, smartphone moves toward becoming a requisite for modern people. Under the circumstances, high-speed communication services such as LTE provide high quality services anywhere and anytime and, furthermore, the development of high performances of the application makes the life patterns of modern people link directly to smartphone. Almost every day, new creative services are being introduced and the demands of on-line streaming services such as high-performance game and YouTube are increasing day after day. However, although smartphones are getting smarter and high quality services are rapidly growing, consumers still complain about the insufficient usage time caused by the capacity of batteries. In order to solve this problem, this thesis suggests EDLC(Electric Double-Layer Capacitor) uses as a supplemental power supply to keep the continuity of work while switching batteries. Through this approach, the running time of smartphone becomes longer as the number of batteries without power off and the purpose of this study is to maximize the convenience of using smartphone by eliminating the initialization of memories and the loss of time of rebooting while batteries are switched.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.99-99
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• 2008

대구경, 고품질 GaN 단결정 기판은 HVPE 방법을 이용하여 제조하였다. 이때 성장 방법은 기판인 $Al_2O_3$ 단결정 기판을 질화처리 하였으며, 이종기판 성장 시 야기되는 격자 불일치와 성장 후 냉각동안에 열팽창 계수의 불일치로 야기되는 휨이나 crack 발생을 제거하기 위하여 step-growth 방법을 사용하였다. 사파이어 위에 성장된 GaN의 기판은 두께가 380um이며, 직경은 3"로 crack 발생은 없었으며, $600^{\circ}C$에서 레이저 분리 방법을 이용하여 사파이어와 분리하였다. 그러나 분리된 기판은 이종기판과의 접촉면에서 고밀도 결함발생으로 인하여 휨이 발생하였으며, 표면을 연마한 후 DCXRD의 FWHM은 107 arcsec, PL을 이용한 결함밀도는 $6.2\times10^6/cm^2$으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.275-275
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• 2007

Two sorts of electrode composed of Sulpur/CNT/PVDF and Silver/CNT/PVDF were prepared by in situ chemical method and their electrochemical performance were evaluated by using cyclic voltammetry, impedance measurement and constant-current charge/discharge cycling technique. Also, composite electrodes were characterized by FE-SEM and BET. Raw materials such as CNT/Silver and CNT/Sulfur were mixed in ethanol, dried. These mixed materials were heated at 900 and $320^{\circ}C$ for 2hr, respectively in order to enhance contact among CNT electrodes. Electric double layer capacitor cells were fabricated using these mixed powder with polymer of PVDF. For the charging and discharging characteristics measured at scan rate of 1 mA/s, Supercapacitor of Sulphur-CNT-PVDF electrode showed a better performance than that of Ag-CNT-PVDF, which seems to be related with lower contact resistance of Sulphur-CNT-PVDF electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.20-20
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• 2007

Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an $Al_2O_3$ layer which was semi cylindrically coated on a single ZnO nanowire. The family of $I_{DS}-V_{GS}$ curves for the double sweep of the gate voltage at $V_{DS}$ = 1 V was obtained. The device decorated with nanoparticles shows giant hysterisis loops with ${\Delta}V_{th}$ = 2 V, indicating a significant charge storage effect. Note that the hysterisis loops are clockwise which result from the tunneling of the charge carriers from the nanowire into the nanoparticles. On the other hand, the device without nanoparticles shows a negligible countclockwise hysterisis loop which reveals that the influence of oxide trap charges or mobile ions is negligible. Therefore, the charge storage effect mainly comes from the nanoparticles decorated on the nanowire, which obviously demonstrates that the top-gate single ZnO nanowire-based FETs decorated with Au nanoparticles are the good candidate for the application in the nonvolatile memory devices of next generation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.481-481
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• 2007

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP 20 : carbon black: PTFE = 95-x : x : 5 wt.%. It was found that the best electric and mechanical properties were obtained in sheet electrode roll-pressed for about 15 times and in sheet electrode, in which composition is MSP 20 : carbon black: PTFE = 80 : 15 : 5 wt.%. These behaviors could be explained by the network structure of PTFE fibrils and conducting paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with 15 wt.% of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black : CMC = 70 : 30 wt.%, has exhibited the best rate capability in the current range of $0.5mA/cm^2$ $100mA/cm^2$ and the lowest equivalent series resistance.