• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.252-255
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• 2013

Nano MOS with $Er_2O_3/SiO_2$ double-layer gate dielectrics was demonstrated by EDISON Nanophysics software. Double-layer structure decreases the gate leakage current in two orders compared with $SiO_2$ single-layer gate dielectric.

• Bulletin of the Korean Chemical Society
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• v.11 no.6
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• pp.487-493
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• 1990

A complete potential profile of an electrical double layer is calculated from a distribution function of charged particles based upon a model where the effect of a charged electrode and the finite size of ion are explicitly included. Electrons which are distributed on the electrode surface are assumed not to penetrate the electrode/electrolyte boundary. Formation of the constant density regions and their effects on potential and the electrical double layer capacitances are studied in great detail. The distribution of surface electrons as well as the constant density regions are found to be essential in characterizing the electrical double layer. The introduction of the ion size into the prior electrical double layer model of an ideally polarizable electrode/point charged electrolyte system, shows a great improvement in its characteristics mostly at negative potential region.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.7
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• pp.956-962
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• 2003

The Lippmann-Young equation has been widely used in electrowetting to predict the contact-angle change of a droplet on a insulating substrate with respect to the externally-applied electrical voltage. The Lippmann-Young equation is derived by assuming a droplet as a perfect conductor, so that the effect of the electrical double layer and the line tension are not taken into account. The validity of the assumption has never been checked before, systematically. In the present investigation, a modified Lippmann-Young equation is derived taking into account of the effect of the electrical double layer and the line tension. To assess their influence on contact-angle change in electrowetting, the electrostatic field around the three-phase contact line is analyzed by solving the Poisson-Boltzmann equation numerically. The validity of the numerical methods is verified by using the past theoretical results on the electrostatic field around a wedge-shaped geometry, which shows fairly good agreement. The results of the present investigation clearly indicate that the effect of the electrical double layer and the line tension is negligible for a millimeter-sized droplet. On the other hand, for a micron-sized droplet, the effect of the line tension can become a dominating factor which controls the contact-angle change in electrowetting.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.197-199
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• 2011

In this paper, the bottom-gate thin-film transistors (TFTs) were fabricated with an amorphous/microcrystalline Si double layer (DL) as an active layer and the variations of the electrical characteristics were investigated according to the DC bias stresses. Since the fabrication process of DL TFTs was identical to that of the conventional amorphous Si (a-Si) TFTs, it creates no additional manufacturing cost. Moreover, the amorphous/microcrystalline Si DL could possibly improve stability and mass production efficiency. Although the field effect mobility of the typical DL TFTs is similar to that of a-Si TFTs, the DL TFTs had a higher reliability with respect to the direct current (DC) bias stresses.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.173-176
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• 2009

We suggest a new protective layer for PDP consists of SrO and MgO double layer. This double layer structure protects SrO layer from the contamination by $H_2O$ or $CO_2$ in the air and enable SrO to play as the main cathode material. It was confirmed that the high secondary electron emission characteristics of SrO by Xe ion can bring considerable driving voltage reduction and improvement of luminance and luminous efficacy in PDP.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1344-1347
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• 2007

We have fabricated bottom gate TFTs with active layers of amorphous/microcrystalline Si double layers (DL). Dynamic electric stresses were applied to DL TFTs and a-Si TFTs to compare their degradation characteristics. The DL TFTs were more stable under dynamic stresses than a-Si TFTs.

• Particle and aerosol research
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• v.10 no.3
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• pp.99-108
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• 2014

Liquid filtration by membrane filters is essential for the preparation of ultrapure water in semiconductor manufacturing processes. The separation of submicrometer particles suspended in ultrapure water with a laminated fibrous membrane filter was studied numerically and experimentally in the present work. We found that an electrical double layer around a single fiber expanded to a large extent at a low ion concentration, as in ultrapure water, and deformed toward the upstream of the fiber with increasing filtration velocity. Since an increase in the electrical double-layer thickness leads to a decrease in the electrical potential gradient, particles with the same polarity as the fiber approach the fiber more easily and are captured at a high filtration velocity. Experimental results also confirmed that the collection efficiency of polystyrene latex(PSL) particles through a PTFE filter became higher as the filtration velocity increased.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.734-736
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• 2008

A method to make the near and far images for a double layer 3D display system to create continuous depth illusion has been studied. The luminance ratio between the near and far images should be allocated based on the tone reproduction characteristics of the display systems.

• Journal of Electrical Engineering and Technology
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• v.1 no.2
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• pp.251-256
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• 2006

To design the effective usage of electric double layer capacitors (EDLCs) used for a storage device of dye sensitized solar cell (DSC) energy, we first investigated the accumulation state of electrical charges and the charge behavior in the EDLCs. Based on the results, the voltage characteristics of EDLCs connected to DSC energy were evaluated. The results showed that the charge accumulation region concentrated on the central part of the carbonaceous electrode in EDLCs and the required times for charging and discharging were almost the same.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.