• 제목/요약/키워드: Electrical Contact

검색결과 2,095건 처리시간 0.029초

Cross형 초음파 회전모터의 설계에 관한 연구 (A Study on Design of the Cross Type Ultrasonic Rotary Motor)

  • 정현호;박태곤
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.191-192
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    • 2005
  • In this study, the ultrasonic motor which has hollowed cross type stator was designed, and the elastic body of ultrasonic motor was optimized by using a finite element analysis program(ANSYS 9.0). When the length of leg(L) of the elastic body was increased and the width of piezoceramics was decreased, the resonant frequency was increased and the displacement of contact point between the rotor and the stator was increased. However, when the length of the leg was over the 1/3 point of the width of ceramics, the displacement of the contact point was decreased, because the elastic buckle was generated in the leg.

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Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-film Transistors by AZO/Ag/AZO Multilayer Transparent Electrode

  • 노영수;양정도;박동희;위창환;조세희;김태환;최원국
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.443-443
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    • 2012
  • We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

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NiO/NiFe/Cu/NiFe 스핀-밸브 샌드위치의 자기저항 특성 (Magneto resistance in NiO/NiFe/Cu/NiFe spin-valve Sandwiches)

  • 김재욱
    • E2M - 전기 전자와 첨단 소재
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    • 제10권10호
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    • pp.1016-1021
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    • 1997
  • Magneto resistance properties in spin-valve sandwiches with various thickness of nanmagnetic layer in contact with the ferromagnetic NiFe film were investigated. The NiFe layer in contact with the NiO film was pinned by strongly exchange-biased coupling and the free NiFe layer at the film surface induced a sharp change in the magnetoresistance at -5~15Oe due to small coercivity. The NiO/NiFe/Cu/NiFe film showed a magnetoresistance ratio in the range of 2.3~2.9% and a field sensitivity above 2.2%/Oe with various of nonmagnetic layer. The NiO/NiFe/Cu/NiFe film of the field sensitivity above 2.2%/Oe suggests stang possibility of magnetic sensor matter.

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급속 열처리 공정을 이용한 결정질 실리콘 태양전지의 전극 소결 최적화 (Co-firing Optimization of Crystalline Silicon Solar Cell Using Rapid Thermal Process)

  • 오병진;여인환;임동건
    • 한국전기전자재료학회논문지
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    • 제25권3호
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    • pp.236-240
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    • 2012
  • Limiting thermal exposure time using rapid thermal processing(RTP) has emerged as promising simplified process for manufacturing of solar cell in a continuous way. This paper reports the simplification of co-firing using RTP. Actual temperature profile for co-firing after screen printing is a key issue for high-quality metal-semiconductor contact. The plateau time during the firing process were varied at $450^{\circ}C$ for 10~16 sec. Glass frit in Ag paste etch anti-reflection layer with plateau time. Glass frit in Ag paste is important for the Ag/Si contact formation and performances of crystalline Si solar cell. We achieved 17.14% efficiency with optimum conditions.

Development of a Live-line Insulator Inspection Tool System for 154 kV Power Transmission Lines

  • Lee, Jae-Kyung;Park, Joon-Young;Cho, Byung-Hak;Oh, Ki-Yong
    • Journal of Electrical Engineering and Technology
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    • 제7권1호
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    • pp.23-33
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    • 2012
  • The current paper deals with a new live-line insulator inspection tool system that will be used by the Korea Electric Power Corporation for its 154 kV power transmission lines in 2011. Unlike the existing contact type tools, the developed inspection tool automates parts of the insulator inspection process using a sensor and an actuator. The tool sustains its weight independently, not by a lineman. In addition, the inspection tool measures the insulation resistance of an insulator together with its distribution voltage, thus providing more information for analysis and diagnosis. Such characteristics improve the system's operation efficiency, measurement reliability, and usability. We confirmed its effectiveness through live-line field tests with actual power transmission lines.

Electrical Characteristics of Bottom-Contact Organic Thin-Film-Transistors Inserting Adhesion Layer Fabricated by Vapor Deposition Polymerization and Ti Adhesion Metal Layer

  • Park, Il-Houng;Hyung, Gun-Woo;Choi, Hak-Bum;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.958-961
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    • 2007
  • The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

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1300 V급 4H-SiC SBDs의 Contact의 특성에 미치는 열처리 효과 (Annealing effect of Schottky contact on the characteristics of 1300 V 4H-SiC SBDs)

  • 강수창;금병훈;도석주;제정호;신무환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.30-33
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    • 1999
  • 본 연구에서는 Pt/f4-SiC Schottky barrier diodes(SBDs)의 소자 성능향상과 미세구조와의 상관관계를 규명하였다. 다른 열처리 온도구간에 따른 금속/SiC 계면의 미세구조 평가는 X-ray scattering법을 사용하여 분석하였다. 소자의 역 방향 특성은 열처리 온도가 증가함에 따라 저하되었다. As-deposited와 $850^{\circ}C$ 온도에서 열처리된 소자의 최대 항복전압은 각각 1300 V와 626 V 이었다. 그러나, 소자의 순방향 특성은 열처리 온도가 증가함에 따라 향상되었다. X-ray scattering법으로 >$650^{\circ}C$ 이상의 열처리 온도에서는 Pt/SiC 계면에서 Pt-silicides가 형성되었고, 이러한 Silicides의 형성이 Pt/SiC 계면의 평활도를 증가시킨 원인이 됨을 보였다. SBDs의 순방향 특성은 열처리 과정동안 Pt/SiC 계면에서 형성된 silicides의 결정성에 강하게 의존함을 알 수 있었다.

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Bi계 고온초전도 전류 리드의 특성 (Characteristics of Bi-based High $T_c$ Superconducting Current Lead)

  • 백승명;이병성;김영석;곽민환;김상현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.73-76
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    • 1999
  • We have fabricated and tested a Bi-based high temperature superconducting current lead system. Ag sheathed Bi-2223 mono-filament tapes of $I_c=8.4$ A at 77 K under self-field condition were fabricated using powder-in-tube(P1T) method. Multi-layer current leads can be made by stacking of Ag sheathed Bi-2223 mono-filament wires. The critical current of this 10-layer current lead is about 68 A. The contact resistance across the copper-current lead interface has been studied using current-voltage characteristics. At temperature below critical temperature the resistive contribution of the interface to the total contact resistance dominates. We have measured AC transport losses in a current lead at 77 K, 60 Hz by a transport method.

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비닐절연전선의 산화물 성장 특성과 화재조사에의 적용 (Copper Oxide Growing Characteristics of PVC Insulated Wire and Application to the Fire Investigation)

  • 김향곤;최충석;김동욱;최효상
    • 전기학회논문지P
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    • 제56권1호
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    • pp.37-44
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    • 2007
  • This paper describes characteristics for copper oxide growth of polyvinyl chloride(PVC) insulated wires by series arc. In this experiment, 600V IV wires were used, and characteristics of oxide growth and ignition process were analyzed in case load was 300W, 460W and 600W, respectively. In the result of experiment, covering materials were molten, carbonized and ignited, whereas, oxidized materials were grown in conducting material. During copper oxide was growing, contact voltages and power dissipations increased. When there is copper oxide growth, the waveform of current showed sinusoidal waveform, and the waveform of voltage showed modified waveform. Oxidized materials were heated at about $905^{\circ}C$, surface structure showed irregular shapes, and cross-section showed multiple cracks. And, the results of this experiment were applied to the fire cause analysis of fire evidence collected at the fire scene.

전기화학적 식각정지에 의한 SOI 박막화에 관한 연구 (A study on SOI structures thinning by electrochemical etch-stop)

  • 강경두;정수태;류지구;정재훈;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.583-586
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    • 2000
  • The non-selective method by polishing after grinding was used widely to thinning of SDB SOI structures. This method was very difficult to thickness control of thin film, and it was dependent on equipments. However electrochemical etch-stop, one of the selective methods, was able to accurately thickness control and etch equipment was very simple. Therefore, this paper described with the effect of leakage current and electrodes on electrochemical etch-stop. Consequentially, PP(passivation potential) was changed according to the kinds of contact and contact sizes, but OCP(open current potential) was not change with range of -1.5~-1.3V

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