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Co-firing Optimization of Crystalline Silicon Solar Cell Using Rapid Thermal Process

급속 열처리 공정을 이용한 결정질 실리콘 태양전지의 전극 소결 최적화

  • Oh, Byoung-Jin (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Yeo, In-Hwan (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Lim, Dong-Gun (Department of Electronic Engineering, Korea National University of Transportation)
  • 오병진 (한국교통대학교 전자공학과) ;
  • 여인환 (한국교통대학교 전자공학과) ;
  • 임동건 (한국교통대학교 전자공학과)
  • Received : 2012.01.30
  • Accepted : 2012.02.20
  • Published : 2012.03.01

Abstract

Limiting thermal exposure time using rapid thermal processing(RTP) has emerged as promising simplified process for manufacturing of solar cell in a continuous way. This paper reports the simplification of co-firing using RTP. Actual temperature profile for co-firing after screen printing is a key issue for high-quality metal-semiconductor contact. The plateau time during the firing process were varied at $450^{\circ}C$ for 10~16 sec. Glass frit in Ag paste etch anti-reflection layer with plateau time. Glass frit in Ag paste is important for the Ag/Si contact formation and performances of crystalline Si solar cell. We achieved 17.14% efficiency with optimum conditions.

Keywords

References

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