• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.72-74
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• 2002

A submicron contact scheme using $WN_x$ diffusion barrier has been suggested for multilevel interconnect structure. The contact resistance of $0.4\times0.48\mu\textrm{m}^2$ size Al/WN/Ti/$n^+$-Si is 120-140 $\Omega$ and the leakage current density is below than $10^{-16}$$-10^{-15}A/\mu\textrm{m}^2$. The effect of F atoms on the submicron contact has been investigated with the nuclear resonance analysis method.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.540-543
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• 2003

This paper presents design and manufacture of RF type non-contact radiological dosage measuring device. It also concerns on the broad out-line and the ways of improvement about RF type non-contact radiation measuring device. Measuring radiological dosage with non-contact RF, the stability and efficiency of the measure have been improved by reforming constant current circuit. Furthermore, applying communication protocol in process makes it possible to achieve faster and more accurate communication than old circuit. On the base of those, RF type non-contact radiological dosage measuring device which consists of radiological dosage measuring module and Reader module has been designed and manufactured. While testing communication against embodied device, the possibility of the field application could be confirmed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.4
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• pp.47-53
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• 2015

The electrical safety and efficiency is the most important thing of the electric vehicle charging system. The prior system is contact charging system that is contacted directly by human. So, it has riskiness such as electric shock in the case of poor insulation or contact problems. To solve these safety issues and the convenience problems, a wireless power transmission system has been developed and is currently in trial operation. However, because high frequency is used in wireless power transmission system instead of commercial frequency, we need to apply protection measures concerning electric shock and equipment protection. Also, it should be accompanied by measuring efficiency for the effective operation of the wireless power transmission system. Therefore, we structured monitoring system in trial operation area of wireless power transmission system and applied decision algorithm for protection of human and equipment and economic operation of it.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1380-1381
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• 2011

본 논문에서는 SILVACO 사의 ATHENA와 ATLAS를 이용하여 후면 전극 실리콘 태양전지 (back contact silicon solar cell)의 전면 텍스쳐링 (texturing) 깊이 (depth)와 텍스쳐링 간격 (gap)에 따른 태양전지 효율(efficiency)에 미치는 영향을 분석하였다. 제안한 후면 전극 실리콘 태양전지는 (100) silicon wafer(n-type, $6{\times}10^{15}\;cm^{-3}$)을 기반으로 전면부에 텍스쳐링을, 후면부에 BSF(back surface field, $1{\times}10^{20}\;cm^{-3}$)와 에미터(emitter, $8.5{\times}10^{19}\;cm^{-3}$)를 구성하고, 셀간 피치를 1250 ${\mu}m$, BSF와 에미터의 간격을 25 ${\mu}m$으로 한 구조이다. 텍스쳐링 간격이 없이 텍스쳐링 깊이를 0 ${\mu}m$에서 150 ${\mu}m$으로 증가시켜 분석한 결과, 텍스쳐링 깊이가 증가할수록 효율이 23.90%에서 25.79%로 증가하였다. 텍스쳐링 간격을 1 ${\mu}m$에서 100 ${\mu}m$으로 증가시켜 분석한 결과, 텍스쳐링 깊이와 상관없이 텍스쳐링 간격이 증가할수록 후면 전극 실리콘 태양전지의 효율이 감소하였다. 텍스쳐링 유무에 따라 후면 전극 태양전지의 외부양자효율의 차이를 보였고 텍스쳐링이 있을 때 외부양자효율이 보다 높은 값을 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• Fire Science and Engineering
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• v.24 no.4
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• pp.104-108
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• 2010

This paper describes electrical fire on electric pad using carbon type hot wires. A carbon type hot wires electric pad is virtually impossible to connect hot wire as a method of electrical welding or soldering. In order to connect between hot wires, that has to splice carbon type material connector. If junction of hot wires was occurrence of poor connection on electric pad, it increase contact resistance on this junction point. With increasing contact resistance, junction of hot wires on electric pad generates local heating and finally leads to electrical fire. In this paper, we analyzed shape of damage in hot wires caused by electrical local heating and investigated fire cause on electric pad using by carbon type hot wires.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.3
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• pp.545-550
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• 2017

As an alternate technique for water softening, high voltage impulse (HVI) is introduced and verified if it can control the $CaCO_3$ scale formation in industrial water treatment. After HVI was applied to the artificial hard water containing $100{\pm}5mg/L$ $Ca^{2+}$ for 4 hours, the $Ca^{2+}$ concentration and the electrical conductivity were measured. The concentration of $Ca^{2+}$ was reduced from 94.5 to 86.3 mg/L (8.7% reduction) after 4 hour contact of HVI under 5 kV condition. The $Ca^{2+}$ was decreased from 92 to 77.7 mg/L (15.6% reduction) at 8kV and from 90.1 to 75.4 mg/L (16.3% reduction) at 12 kV condition. Both of the contact time and the applied voltage were important parameters affecting the calcium ion reduction. With these results, it was verified that HVI technique could be potential candidate for control of $CaCO_3$ scale formation.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2005.05a
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• pp.31-37
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.364-364
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• 2010

In the electricity control field, a relay is the most widely used electrical switch. But it has problems about a material transfer phenomenon, contact bounce, and the mechanical life. These Problems cause the serious problem in a facility. So, we tried to solve these problems by applying MOSFET electronic switch and could find good improvement compared to conventional electrical switch.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.661-667
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• 1993

Effects of $SiH_4//WF_6$(=R) ratio on the electrical properties of W films such as resistvity, contact resistance, junction leakage current in the selective W CVD technology for contact barrier metal were investigated with the emphasis on the role of $\alpha$-W Resistivity of W increases with increasing R, which is primarily due to the phase transformation from $\alpha$-W to , $\alpha$-W. $\alpha$-W found in the SiH4 reduced CVD W film is stabilized by Si incorporated into the W film rather than by oxygen. $\alpha$-W is found in the W film deposited on the Si substrate for high R, while $\alpha$-W is not found in the W film deposited on the TiN substrate even for high R. Also junction leakages increase with increasing R, which is caused not only by the vertical Si consumption but also the lateral Si consumption.