• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.1-11
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• 2014

Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

• 대한전자공학회논문지TC
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• 제48권9호
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• pp.47-53
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• 2011

본 논문에서는 커넥터의 특성임피던스 추출, 분석 방법 및 설계 변경 방법을 제안하고 임피던스를 정합하여 신호 전달 특성을 개선한다. 3차원 FEM(Finite Element Method) 전자기장(Electro-Magnetic Field) 시뮬레이터를 이용하여 커넥터의 S-파라미터를 계산하고 반사손실 및 삽입손실을 추출한다. 커넥터의 신호 전달 특성은 반사손실이 0.9 GHz 이후부터 -20 dB 이상의 값으로 높게 나타났다. 신호 전달 특성이 낮은 원인을 파악하기 위해서 회로 해석 시뮬레이터를 이용하여 커넥터의 등가 회로 모델을 추출하고 특성임피던스를 계산하였다. 커넥터의 특성임피던스는 $90.3{\Omega}$으로 임피던스 부정합이 발생하여 신호 전달 특성이 저하되었다. 따라서 신호 전달 특성을 개선할 목적으로 임피던스를 정합하기 위해서 커넥터의 커패시턴스를 증가시켰다. 이러한 설계 방안으로 커넥터 신호선의 유효 면적을 확장하고, 커넥터의 몸체 소재로 고유전체를 사용하였다. 설계 변경된 커넥터의 특성임피던스는 $58.6{\Omega}$으로 임피던스 정합에 보다 근접하여 커넥터의 반사손실이 대략 10 dB 향상되었다. 신호선의 유효 면적 증가에 의한 반사손실 개선과 고유전체의 적용으로 전자기파의 신호선 주변 집중에 의해서 삽입손실 또한 개선되었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.84-87
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• 2003

Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.2004-2006
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• 1996

A thermally driven polysilicon micro actuator has been fabricated using surface micromachining techniques. It consists of P-doped polysilicon as a structural layer and TEOS (tetracthylorthosilicate) as a sacrificial layer. The polysilicon was annealed for the relaxation of residual stress which is the main cause to its deformation such as bending and buckling. And the newly developed HF VPE (vapor phase etching) process was also used as an effective release method for the elimination of sacrificial TEOS layer. The thickneas of polysilicon is $2{\mu}m$ and the lengths of active and passive polysilicon cantilevers are $500{\mu}m$ and $260{\mu}m$, respectively. The actuation is incurred by die thermal expansion due to the current flow in the active polysilicon cantilever, which motion is amplified by lever mechanism. The moving distance of polysilicon micro actuator was experimentally conformed as large as $21{\mu}m$ at the input voltage level of 10V and 50Hz square wave. The actuating characteristics are investigated by simulating the phenomena of heat transfer and thermal expansion in the polysilicon layer. The displacement of actuator is analyzed to be proportional to the square of input voltage. These micro actuator technology can be utilized for the fabrication of MEMS (microelectromechanical system) such as micro relay, which requires large displacement or contact force but relatively slow response.

• Journal of Advanced Marine Engineering and Technology
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• 제39권9호
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• pp.940-946
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• 2015

본 논문에서는 300kHz 이상의 주파수를 사용하는 고전압펄스의 출력이득을 증폭시키는 방법에 대하여 고찰하였다. 종래의 파워스테이지의 전압을 상승시켜 펄스진폭(Pulse-amplitude)을 증폭하는 방식 대신에, 부하의 용량성분과 회로의 기생성분간의 공진을 이용하여 출력이득을 증폭하는 방식으로 연구가 진행되었다. 특히 브릿지형 대신에 Flyback Topology를 적용을 통하여 회로구성을 간소화하고, 출력펄스파형에 출력전극의 용량성분을 부여함에 따라 부하에 가해지는 출력전압의 이득을 증폭시킴으로써, 하드스위칭을 통한 출력회로 내에서의 과부하 및 발열에 따른 손상을 막을 수 있는 장점이 있다. 해당연구는 의료 및 산업용가열분야에 적용되는 유전가열 방식의 접촉형 가열기기의 공간적, 전기적 효율을 제고할 수 있는 한 방법을 제시한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.458.2-458.2
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• 2014

We have demonstrated that simple brush-painted Ti-doped $In_2O_3$(TIO) films can be used as a cost effective transparent anodes for organic solar cells (OSCs). We examined the RTA effects on the electrical, optical, and structural properties of the brush painted TIO electrodes. By the direct brushing of TIO nanoparticle ink and rapid thermal annealing (RTA), we can simply obtain TIO electrodes with a low sheet resistance of 28.25 Ohm/square and a high optical transmittance of 85.48% under atmospheric ambient conditions. Furthermore, improvements in the connectivity of the TIO nano-particles in the top region during the RTA process play an important role in reducing the resistivity of the brush-painted TIO anode. In particular, the brush painted TIO films showed a much higher mobility ($33.4cm^2/V-s$) than that of previously reported solution-process transparent oxide films ($1{\sim}5cm^2/V-s$) due to the effects of the Ti dopant with higher Lewis acid strength (3.06) and the reduced contact resistance of TIO nanoparticles. The OSCs fabricated on the brush-painted TIO films exhibited cell-performance with an open circuit voltage (Voc) of 0.61 V, shot circuit current (Jsc) of $7.90mA/cm^2$, fill factor (FF) of 61%, and power conversion efficiency (PCE) of 2.94%. This indicates that brush-painted TIO film is a promising cost-effective transparent electrode for printing-based OSCs with its simple process and high performance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.207.1-207.1
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• 2014

High-mobility and two dimensional conduction at the interface between two band insulators, LaAlO3 (LAO) and SrTiO3 (STO), have attracted considerable research interest for both applications and fundamental understanding. Several groups have reported the photoconductivity of LAO/STO, which give us lots of potential development of optoelectronic applications using the oxide interface. Recently, a giant photo response of Pd nano particles/LAO/STO is observed in UV illumination compared with LAO/STO sample. These phenomena have been suggested that the correlation between the interface and the surface states significantly affect local charge modification and resulting electrical transport. Water and gas adsorption/desorption can alter the band alignment and surface workfunction. Therefore, characterizing and manipulating the electric charges in these materials (electrons and ions) are crucial for investigating the physics of metal oxide. Proposed mechanism do not well explain the experimental data in various ambient and there has been no quantitative work to confirm these mechanism. Here, we have investigated UV photo response in various ambient by performing transport and Kelvin probe force microscopy measurements simultaneously. We found that Pd nano particles on LAO can form Schottky contact, it cause interface carrier density and characteristics of persistence photo conductance depending on gas environment. Our studies will help to improve our understanding on the intriguing physical properties providing an important role in many enhanced light sensing and gas sensing applications as a catalytic material in different kinds of metal oxide systems.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.110-113
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• 2017

The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.726-728
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• 2013

전력배전반 내 아크방전을 감지할 수 있도록 광전자 방식 아크방전 감지센서를 구현하였다. 아크방전은 시작되면 전력시스템에 치명적이므로 전력차단이 발생하기 전에 사전에 이를 감지하는 것이 필요하다. 전력배전반 내 전력 기기에 직접적인 전기적 접촉을 피하기 위하여 광전자적 감지 방식이 사용되었다. $7.5mm^2$의 수광면적을 갖는 수광소자와 $2.16cm^2$ 발광면적에서 1.9J의 에너지를 발광하는 즉 $0.4cal/cm^2$ 에너지 밀도를 갖는 플래쉬 광원을 사용하여 180도 감지각과 감시 목적으로는 충분한 6m 이상의 감지거리가 달성되었다. 아크방전 센서의 반응속도는 1 msec 미만으로 측정되었으며 감도는 최대 0.94 pC 의 전하를 감지할 수 있을 정도로 민감함을 보여주었다.

• 대한지역사회영양학회지
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• 제2권2호
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• pp.179-186
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• 1997

A new bioelectrical impedance method has been developed and evaluated. The electrodes; were made of stainless steel and electrical interfaces were created by an upright subject gripping hand electrodes and stepping onto foot electrodes. Eight tactile electrodes were in contact with surfaces of both hands and feet; thumb, palm and fingers, front sole, and rear sole. Automatic on-off switches were used to change current pathways and to measure voltage differences for target segments. Segmental body resistances and whole body resistance(RWHOLE)were measured in 60 healthy subjects. Segmental resistances of right arm(RRA), left arm(RLA), trunk(RT), right leg(RRL) and left leg(RLL)were310.0$\pm$61.6$\Omega$, 316.9$\pm$64.6$\Omega$, 25.1$\pm$3.4$\Omega$, 236.8$\pm$31.2$\Omega$ and 237.6$\pm$30.4$\Omega$, respectively. Individual segmental impedance indexes(Ht2/RRA, Ht2/RT, and Ht2 /RLA) were closely related to lean body mass(LBM)as measured by densitometry ranged from r=0.925 to 0.960. Ht2/(RRA+RT+RLA) predicted LBM slightly better(r=0.969) than the traditional index, Ht2/RWHOLE(r=0.964), supporting the accuracy of the segmental measurement. A multiple regression equation utilizing Ht2/RRA, Ht2/RT and Ht2/RRL predicted LBM with r=0.971. Ht2/RRA term of the regression contributed to more than 40$\%$ of the LBM prediction, indicating that lean mass of arm represented whole body LBM more closely than other body segments. The new bioimpedance method was characterized by upright posture, eight tactile electrodes, segmental measurements and utilization of electronic switches in comparison with the traditional method. The measurement with this new method was extremely reproducible, quick and easy to use.