• 전기학회논문지
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• 제60권11호
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• pp.2171-2175
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• 2011

The objective of this paper is to discuss technologies on assessing reliability of arc detectors by composing a system that generates and simulates occurrence of arc caused by loss of contact between pantographs and contact wires in a laboratory condition. In order to establish the arc simulator, a device that generates light having the bandwidth of arcs that occur between carbon-metal. The simulator was designed under conditions of EN 50317 and simulations were conducted using the developed device. According to the results, it was possible to conduct certification tests following regulations of international standards and the precision of the simulator was satisfactory. The proposed arc detector assessment system is expected to enhance precision of current collection quality performance assessment methods at high-speed lines and conventional lines while being referred as fundamental technologies for development of detectors suiting international conditions.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권2호
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• pp.59-64
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• 2001

The distribution of current in the conductors influenced by the armature geometry and velocity is an important parameter for determining performance of an electromagnetic launcher(EML). the electric current in the early launching stage tends to flow on the outer surfaces of the conductors, resulting in very high local electric current density. However, the tendency for current to concentrate on the surface is driven by the velocity skin effect later in launching stage. The high current density produces high local heating and, consequently, increases armature wear which causes several defects on EML system. This paper investigates the effects of rail/armature geometry on current density distribution, launcher inductance gradient (L'), and contact force. Three geometrical parameters are used here to characterize the railgun system. These are the ratio of contact length to root length, relative position of contact leading edge to root trailing edge, and the ratio of rail overhang to the rail height. The distribution of current density, L', contact force between various configurations of the armature and the rail are analyzed and compared by using the EMAP3D program.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.521-524
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• 2001

In this letter, we report on the investigation of Ti, Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 500$^{\circ}C$ for 1h, 950$^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific contact resistivities in the 3.5x10$\^$-3/ and 6.2x10$\^$-4/ ohm/$\textrm{cm}^2$, and the physical properties of the contacts were examined using x-ray diffraction, microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.390-396
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• 2003

As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 ％ in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.449-454
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• 2002

The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.46-49
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• 2016

A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10² Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm² V⁻¹s⁻¹, S.S of 0.9 Vdecade⁻¹, and on/off current ratio of 9.7×10⁶ A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

• 전기학회논문지
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• 제64권12호
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• pp.1782-1788
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• 2015

In this paper, analysis of the effects for construction tolerances on the current collection performance of high speed catenary system. The height of the contact wire is the geometrical position of the cantilever directly affects the current collection performance. Contact force when the height of the contact wire exceeds the construction tolerance were analyzed. As a result, the maximum contact force was analyzed to more than 350[N] that are recommended by EN50119. And when the geometrical position of the cantilever to exceeds the construction tolerance, the analysis results of uplift at the mast support points, it becomes 127[mm] that are recommended by UIC 799. If the construction tolerances exceeds the reference value, the current collection performance is deteriorated. Therefore, catenary system require high precision construction. In the future, there is a need for continuing research on the tolerance of catenary system in the actual operating state.

• 한국전기전자재료학회논문지
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• 제34권1호
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• pp.50-55
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• 2021

Copper-chromium alloys have been used as contact materials of vacuum interrupters in circuit breakers, but new materials with highly stable performance are required to break the high voltage and high current barrier due to the recent increase in breaking capacity. In this paper, a new contact material was fabricated from a ternary alloy instead of existing Cu-Cr alloys. Its breaking performance and endurance were verified from a synthetic test and compared with that of various contact materials. The test results verified that the breaking performance of the new contact material was excellent.

• 한국화재조사학회학술대회
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• 한국화재조사학회 2010년도 제 19회 춘계학술대회
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• pp.66-81
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• 2010

본 논문에서는 콘센트와 플러그 접속부에서의 접촉불량에 의한 열화특성에 대하여 실험, 분석하였다. 부하의 크기와 시간 경과에 따른 전기적 특성을 분석하였으며 도전 재료와 절연재료의 외형, 표면구조, 열화특성을 분석하였다. 실험결과는 접촉불량에 의한 전기화재 예방과 화재원인 분석에 활용 가능할 것으로 기대된다.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.