• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1361-1366
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• 2008

Failure mechanism of the poor contact is analyzed on the basis of used connectors and this poor contact of connectors is reappeared by the new forced fretting wear method. As the result of failure analysis and reappearance, fretting wear and corrosion of the contact interface causes the contact resistance degradation and the poor contact of connectors. The amount of degradation depends on the fretting stroke. Changes in contact resistance of static contacts are likely to be small and gradual, while motions of contact interface may result in larger and discontinuous changes in resistance and voltage. This voltage drop by fretting motions is large enough to cause the distortion of sensor signal and mis-working of electric components.

• 한국분말재료학회지
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• 제14권5호
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• pp.327-332
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• 2007

In a view point of environment, the advanced electric contact material without environmental load element such as cadmium has to be developed. Extensive studies have been carried out on $Ag-SnO_2$ electric contact material as a substitute of Ag-CdO contact materials. In the present study, powder metallurgy including compaction and sintering is introduced to solve the incomplete oxidation problems in manufacturing process of $Ag-SnO_2$ electrical contact material. The $Ag-SnO_2$ contact material, fabricated in this study, was actually set in an electric switchgear of which working voltage is 462V and current is between 25 and 40A, for the purpose of testing its performance. As a result, it exceeded the existing Ag-CdO contact materials in terminal-temperature ascent and main contact resistance.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.717-723
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• 2009

Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.571-574
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• 2010

Surface recombination loss should be reduced for high efficiency of solar cells. To reduce this loss, the BSF (back surface field) is used. The BSF on the back of the p-type wafer forms a p+layer, which prevents the activity of electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. Therefore, the open-circuit-voltage (Voc) and fill factor (FF) of solar cells are increased. This paper investigates the formation of the rear contact process by comparing aluminum-paste (Al-paste) with pure aluminum-metal(99.9%). Under the vacuum evaporation process, pure aluminum-metal(99.9%) provides high conductivity and low contact resistance of $4.2\;m{\Omega}cm$, but It is difficult to apply the standard industrial process to it because high vacuum is needed, and it's more expensive than the commercial equipment. On the other hand, using the Al-paste process by screen printing is simple for the formation of metal contact, and it is possible to produce the standard industrial process. However, Al-paste used in screen printing is lower than the conductivity of pure aluminum-metal(99.9) because of its mass glass frit. In this study, contact resistances were measured by a 4-point probe. The contact resistance of pure aluminum-metal was $4.2\;m{\Omega}cm$ and that of Al-paste was $35.69\;m{\Omega}cm$. Then the rear contact was analyzed by scanning electron microscope (SEM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1084-1088
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• 2009

The measurement of dynamic stagger in electric railways is one of the key test parameters to increase speed and maintain safety in electric railways. This paper is introduces a non-contact optical-based measuring instrument of a catenary system in electric railways. The instrument is implemented by utilizing a CCD (Charge Coupled Device) camera installed on the roof of a vehicle for vision acquisition and image processing techniques including the Canny edge detector and the Hough transform to detect contact wires and calculate dynamic stagger. To check the validity of our approach for the intended application, we measured stagger of a overhead wire of a Korea Tilting Train (TTX). The non-contact optical-based measurement system proposed in this paper performs real-time stagger measurement of an activated high-voltage contact wire. By results of this paper, the instrument should be applied to assess performance and reliability of newly developed electric railway vehicles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.235-236
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• 2006

The contact resistance and grain boundary potential barrier of ceramic $BaTiO_3$ PTCR were investigated. The electroless plated Ni, evaporated Al, and Ag paste were chosen as electrode materials of PTCR device for comparison analysis before and after heat treatment. The contact resistance of electrode were measured by electrometer (dc), digital multimeter (dc), and LCR meter (ac). In the case of Al electroded samples, the heat treatment and protective oxide layer had high resistance and effect on the stability of PTCR effect against contact resistance degradation, but the Ag-paste had comparably high contact resistance before heat treatment and decreased after heat treatment with safe. On the other hand, the samples with electroless plated Ni electrode had good properties of contact resistance against aging.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.521-524
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• 2001

In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.97-98
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• 2008

n-ZnO/p-Si heterostructure is a good candidate for ZnO-based heterojunction light emitting diodes(LED) because of its competitive price and lower driving voltage. However, the conventional LED shows much lower extraction efficiency, because it has small top contact and large backside contact. In this structure, the injected current from the top contact enters the active region underneath the top contact. Thus, the emitted light is hindered by the opaque top contact. This problem can be solved by using a current-blocking layer(CBL) that prevents the current injection into the active region below the top contact.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.121-126
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• 2004

In this paper, the effects of the ozone oxidation of the landing polycrystalline silicon on the cell contact resistance of the DRAM device were studied. For this study, the ozone oxidation of the landing polycrystalline silicon layer was performed under various conditions, which was followed by the normal DRAM processes. Then, the cell contact resistance and $t_{WR}$ (write recovery time) of the devices were measured and analyzed. The experimental results showed that the cell contact resistance was more significantly increased for higher temperature of oxidation, longer time of oxidation, and higher concentration of ozone in the oxidation furnace. In addition, the TEM cross-sectional micrographs clearly showed that the oxide layer at the interface between the landing polycrystalline silicon layer and the plug polycrystalline silicon layer was increased by the ozone oxidation. Furthermore, the rate of the device failure due to too large write recovery time was also found to be well correlated with the increase of the cell contact resistance.