Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of Ozone Oxidation on the Contact Resistance of DRAM Cell

오존 산화가 DRAM 셀의 콘택 저항에 미치는 영향

  • 최재승 (충북대학교 전기전자컴퓨터공학과) ;
  • 이승욱 (충북대학교 산업대학원 전기전산공학과) ;
  • 신봉조 (충북대학교 전기전자컴퓨터공학과) ;
  • 박근형 (충북대학교 전기전자컴퓨터공학과) ;
  • 이재봉 (충북대학교 전기전자컴퓨터공학과)
  • Published : 2004.02.01
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Abstract

In this paper, the effects of the ozone oxidation of the landing polycrystalline silicon on the cell contact resistance of the DRAM device were studied. For this study, the ozone oxidation of the landing polycrystalline silicon layer was performed under various conditions, which was followed by the normal DRAM processes. Then, the cell contact resistance and $t_{WR}$ (write recovery time) of the devices were measured and analyzed. The experimental results showed that the cell contact resistance was more significantly increased for higher temperature of oxidation, longer time of oxidation, and higher concentration of ozone in the oxidation furnace. In addition, the TEM cross-sectional micrographs clearly showed that the oxide layer at the interface between the landing polycrystalline silicon layer and the plug polycrystalline silicon layer was increased by the ozone oxidation. Furthermore, the rate of the device failure due to too large write recovery time was also found to be well correlated with the increase of the cell contact resistance.

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References

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