• The Journal of the Society of Stroke on Korean Medicine
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• v.14 no.1
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• pp.61-70
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• 2013

■ Objectives The goal of this pilot study is to observe the change of gait pattern in a patient after peroneal nerve electrical stimulation(PNST). ■ Methods We analyzed the gait pattern of stroke patient using treadmill gait analysis system before and after PNST for seven weeks. The PNST was carried out for 20minutes every day except Sunday. In addition, the measurement was carried out every Saturday. At the fifth week, the PNST was not carried out to confirm whether the effect of PNST was disappeared immediately when PNST was not applied. ■ Results After PNST, while heel contact time and heel max force increased and forefoot and midfoot max force decreased, the gait parameters such as cadence, velocity, swing phase, stance phase, total double support, step length, stride length, step time, stride time and forefoot contact time, were not changed. ■ Conclusion Gait of a patient with cerebral stroke was changed positively after PNST.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.247-251
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• 2004

반도체 소자의 제조에 있어 실리콘 표면에 성장한 자연산화막을 제거하기 위해 일반적으로 습식 세정 기술이 이용되어 왔다. 하지만 소자의 최소 선폭(design rule)이 nano급으로 고집적화 됨에 따라 contact hole 바닥의 자연산화막을 깨끗이 제거하는데 있어서 그 한계를 나타나고 있다. 이에 대한 효과적인 대안 공정으로 가스 건식 세정 기술이 연구되고 있다. 본 논문에서는 한 번에 50매 이상의 웨이퍼를 처리함으로써 생산성 측면에서 월등한 배치식 설비에서 원거리 플라즈마(remote plasma) 장치에서 2.450Hz의 마이크로웨이브(${\mu}$-wave)에 의해 형성시킨 수소라디칼과 $NF_3$ 가스를 이용하여 실리콘에 결함을 주지 않고 자연산화막을 선택적으로 제거하는 공정에 대해 고찰하였다. AFM을 이용한 표면분석, TEM을 이용한 물성분석, 그리고 ToF-SIMS 및 XPS를 이용한 화학 분석을 습식 및 건식 세정을 비교 평가한 결과, 건식 세정 공정이 실리콘 표면에 결함을 주지 않고 자연산화막을 제거 할 수 있음을 확인하였다. 산화막$(SiO_2)$, 질화막$(Si_3N_4)$, 그리고 다결정 실리콘(Poly-Si) 등의 각 막질별 식각 특성을 고찰하였으며, $NH_3$의 캐리어 가스인 $N_2$의 주입량을 조절함으로써 수소라디칼 형성 효율의 개선이 가능하였으며, 이로부터 게이트와 소스/드레인 사이를 절연하기 위해 이용되는 질화막의 식각 선택비를 2배 정도 개선할 수 있었다. nano급 소자에 실장하여 평가한 결과에서 불산(HF)에 의한 습식 세정 방식에 비하여 약 $20{\sim}50%$ 정도의 contact 저항 감소 효과가 있음이 확인되었다.두 소자 모두 $40mA/cm^2$ 에서 이상적인 화이트 발란스와 같은(0.33,0.33)의 색좌표를 보였다.epsilon}_0=1345$의 빼어난 압전 및 유전특성과 $330^{\circ}C$의 높은 $T_c$를 보였고 그 조성의 vibration velocity는 약4.5 m/s로 나타났다.한 관심이 높아지고 있다. 그러나 고 자장 영상에서의 rf field 에 의한 SAR 증가는 중요한 제한 요소로 부각되고 있다. 나선주사영상은 SAR 문제가 근원적으로 발생하지 않고, EPI에 비하여 하드웨어 요구 조건이 낮아 고 자장에서의 고속영상방법으로 적합하다. 본 논문에서는 고차 shimming 을 통하여 불균일도를 개선하고, single shot 과 interleaving 을 적용한 multi-shot 나선주사영상 기법으로 $100{\times}100$에서 $256{\times}256$의 고해상도 영상을 얻어 고 자장에서 초고속영상기법으로 다양한 적용 가능성을 보였다. 연구에서 연구된 $[^{18}F]F_2$가스는 친핵성 치환반응으로 방사성동위원소를 도입하기 어려운 다양한 방사성의 약품개발에 유용하게 이용될 수 있을 것이다.었으나 움직임 보정 후 영상을 이용하여 비교한 경우, 결합능 변화가 선조체 영역에서 국한되어 나타나며 그 유의성이 움직임 보정 전에 비하여 낮음을 알 수 있었다. 결론: 뇌활성화 과제 수행시에 동반되는 피험자의 머리 움직임에 의하여 도파민 유리가 과대평가되었으며 이는 이 연구에서 제안한 영상정합을 이용한 움직임 보정기법에 의해서 개선되었다. 답이 없는 문제, 문제 만들기, 일반화가 가능한 문제 등으로 보고, 수학적 창의성 중 특히 확산적 사고에 초점을 맞추어 개방형 문제가 확

• Korean Journal of Materials Research
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• v.22 no.12
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• pp.664-668
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• 2012

ZnO nanorods were successfully fabricated on Zn foil by chemical bath deposition (CBD) method. The ZnO precursor concentration and immersion time affected the surface morphologies, structure, and electrical properties of the ZnO nanorods. As the precursor concentration increased, the diameter of the ZnO nanorods increased from ca. 50 nm to ca. 150 nm. The thicknesses of the ZnO nanorods were from ca. $1.98{\mu}m$ to ca. $2.08{\mu}m$. ZnO crystalline phases of (100), (002), and (101) planes of hexagonal wurtzite structure were confirmed by XRD measurement. The fabricated ZnO nanorods showed a photoluminescene property at 380 nm. Especially, the ZnO nanorods deposited for 6 h in solution with a concentration of 0.005M showed a stronger (101) peak than they did (100) or (002) peaks. In addition, these ZnO nanorods showed a good electrical property, with the lowest resistance among the four samples, because the nanorods were densely in contact and relatively without pores. Therefore, a ZnO nanorod substrate is useful as a highly sensitive biochip substrate to detect biomolecules using an electrochemical method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.21-25
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• 2017

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Journal of the Korean Society of Safety
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• v.32 no.6
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• pp.22-28
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• 2017

According to the National Fire Data System (NFDS), more than 5,000 vehicle fires have occurred every year for the last 10 years. Vehicle fires are primarily caused by mechanical (breaking system and engine), electrical (wiring and battery), and chemical (oil and fuel gas leakage) problems. The electrical factor has increased with the installation of driver convenience equipment. For example, today, the black box is widely used to provide video data recording of motor vehicle accidents. The black box consists of a front camera, rear camera, and wires. The black box wires are directly connected to the junction box or fuse box from the start battery that operates to provide normal on power supplying for engine stop. It is extremely dangerous when the wires short circuit due to insulation aging, mechanical and electrical stress, etc. In this study, the black box wiring fire risk have been analyzed and investigated when the steady state and abnormal operations, and under the following conditions: wiring arrangements with a high temperature condition, insulation aging, poor contact, and short circuits. The results showed that black box wiring short circuits had a higher fire risk than the other fire hazard elements. To prevent fire hazards caused by black box wiring, the black boxes must be installed by qualified service personnel. Do not modify the wiring, remove the fuse and secure the wiring using cable ties or insulation tape.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.3
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• pp.357-361
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• 2009

This study performed analysis on the thermal pattern and current characteristics of an LED ((Light Emitting Diode) street lamp. It did this using a TVS (Thermal Video System) to analyze the LED street lamp's thermal pattern, and measured its characteristics using an oscilloscope. The ambient temperature and humidity during the experiment were maintained at $24{\pm}2[^{\circ}C]$ and 50~60[%]. The capacity of the LED street lamp was 120[W] and nine sets of modules were arranged at uniform intervals. On one module, 24 LED lamps were arranged in a radial pattern. The analysis of the thermal diffusion pattern at the front of the LED lamp showed that the maximum surface temperature was approximately $34[^{\circ}C]$. In addition, there was almost no change in the temperature of the upper cover, and the temperature at the side showed a uniform thermal diffusion pattern. The surface temperature of the converter converting AC to DC increased to approximately $46[^{\circ}C]$. The analysis results of the thermal characteristics of one LED indicated uniform thermal characteristics for an initial eight minutes. However, the temperature at the center of the LED increased to approximately $82[^{\circ}C]$ after 12 minutes had elapsed. It can be seen from this that the temperature at the center of the LED was higher than the allowable temperature, $70[^{\circ}C]$ of the insulating material for general electrical devices. Therefore, it is necessary to design a lamp in such a way that the plastic insulating material does not come into contact with or get close to the LED lamp. The voltage of the LED lamp converted by the AC/DC converter was measured at DC 27[V] and the current was DC 13[A]. Consequently, it can be seen that in order to secure an adequate light source, it is important to supply a stable current that was greater than the current of other light sources. Therefore, appropriate radiation of heat is required to secure the stability and reliability of the system.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.2
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• pp.24-28
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• 2006

Electrochemical hydrogenation/dehydrogenation properties were studied for a single particle of a Mm-based(Mm : misch metal) hydrogen storage alloy($MmNi_{3.55}Co_{0.75}Mn_{0.4}Al_{0.3}$) for the anode of Ni-MH batteries. A carbon fiber microelectrode was manipulated to make electrical contact with an alloy particle, and the cyclic voltammetry and the galvanostatic charge/discharge experiments were performed. A single particle of the alloy showed the discharge capacity of 280[mAh/g], the value being 90[%] of the theoretical capacity. Data were compared with that of the composite film consisting of the alloy particles and a polymer binder, which is more practical form for Ni-MH batteries. Additionally, pulverization of the alloy particles are directly observed. Compared with the conventional composite film electrodes, the single particle measurements using the microelectrode gave more detailed, true information about the hydrogen storage alloy.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.2
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• pp.45-49
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• 2006

Electrochemical hydrogenation/dehydrogenation properties were studied for a single particle of a Mm-based(Mm : minh metal) hydrogen storage alloy($MmNi_{3.55}Co_{0.75}Mn_{0.4}Al_{0.3}$) for fuel cell and Ni-MH batteries. A carbon fiber microelectrode was manipulated to make electrical contact with an alloy particle, and the potential-step experiment was carried out to determine the apparent chemical diffusion coefficient of hydrogen atom($D_{app}$) in the alloy. Since the alloy particle we used here was a dense, conductive sphere, the spherical diffusion model was employed for data analysis. $D_{app}$ was found to vary the order between $10^{-9}\;and\;10^{-10}[cm^2/s]$ over the course of hydrogenation and dehydrogenation process. Compared with the conventional composite film electrodes, the single particle measurements using the microelectrode gave more detailed, true information about the hydrogen storage alloy.