• 제목/요약/키워드: Electric device

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분전반 관리시스템 평가를 위한 시험 장치의 제작 및 특성 분석 (Manufacturing and Characteristics Analysis of a Testing Device for the Evaluation of a Distribution Board Management System)

  • 고완수;이병설;최충석
    • 한국안전학회지
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    • 제34권5호
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    • pp.31-36
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    • 2019
  • This study made a testing device to evaluate the distribution board management system. Power was supplied to the testing device using a loading-back method and the voltage applied to it was 440 V at the same turn ratio. When the human body electric shock current is 30 mA, the breaking time is set to be less than 240 ms while 30~45 mA current is flowing. The test result shows that in the case of the R-phase it was measured to be 5.19 Hz (193 ms). And the S-phase and T-phase were perfectly cut off at 5.39 Hz (186 ms) and 5.71 Hz (175 ms), respectively. When the human body electric shock current is 60mA, the breaking time is set to be less than 120 ms while 45~75 mA current is flowing. The test result shows that the R-phase, S-phase, and T-phase were accurately cut off at 8.39 Hz (11 ms), 8.87Hz (113 ms) and 9.69 Hz (103 ms), respectively. When the human body electric shock current is 90 mA, the breaking time is set to be less than 48 ms while 75 mA current is flowing. The test result shows that the R-phase, S-phase, and T-phase were accurately cut off at 19.8 Hz (50.4 ms), 16.9 Hz (59.2 ms), and 17.9 Hz (56.0 ms), respectively. That is, the developed testing device satisfied all the requirements of the distribution board evaluation criteria, and it becomes available for the performance evaluation of the distribution board management system.

LDD MOSFET 채널 전계의 특성해석 (Characterization of Channel Electric Field in LDD MOSFET)

  • 박민형;한민구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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    • pp.363-367
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    • 1988
  • A simple analytical model for the lateral channel electric field in gate - offset structured Lightly Doped Drain MOSFET has been developed. The model's results agree well with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field as function of drain and gate bias conditions and process, design parameters. Advantages of analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate / drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot - electron phenomena, individually. We are able to find the optimum doping concentration of LDD minimizing the peak electric field and hot - electron effects.

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전기추진시스템의 냉각시스템에 관한 분석 및 설계 (Analysis & Design of Cooling System for Electric Propulsion System)

  • 유병랑;오진석;진선호;임명규;곽준호;조관준;김장목
    • 한국마린엔지니어링학회:학술대회논문집
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    • 한국마린엔지니어링학회 2005년도 전기학술대회논문집
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    • pp.1113-1119
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    • 2005
  • The power electric system is one of the most concerning factor for the reliability of the electric propulsion ship. operation in higher temperature decreases the device's reliability and power efficiency. the management of power loss and temperature of switching devices is indispensable for the reliability fo the power electric system. In this paper, IGBT chip of the switching devices is modeled and MIIR(Motor with Inverter Internal to Rotor)type of the propulsion motors is used. these parts interact with each other to calculate the loss and temperature of device. calculated Results is modeled and designed of the control and monitoring system for the electric propulsion system.

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LDD MOSFET채널 전계의 특성 해석 (Characterization of Channel Electric Field in LDD MOSFET)

  • 한민구;박민형
    • 대한전기학회논문지
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    • 제38권6호
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    • pp.401-415
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    • 1989
  • A simple but accurate analytical model for the lateral channel electric field in gate-offset structured Lightly Doped Drain MOSFET has been developed. Our model assumes Gaussian doping profile, rather than simple uniform doping, for the lightly doped region and our model can be applied to LDD structures where the junction depth of LDD is not identical to the heavily doped drain. The validity of our model has been proved by comparing our analytical results with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field on the drain and gate bias conditions and process, design parameters. Advantages of our analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate/drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot-electron pohenomena, individually. Our model can also find the optimum doping concentration of LDD which minimizes the peak electric field and hot-electron effects.

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연소 기술을 이용한 반도체성 단일벽 탄소 나노튜브 장치 제작 (The Fabrication of A Semi-conducting Single-walled Carbon Nanotube Device Using A Burning Technique)

  • 이형우;한창수;김수현;곽윤근
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.881-885
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    • 2004
  • We report a method for making a device on which semi-conducting single-walled carbon nanotubes are attached selectively between two metal electrodes. This method is divided two processes. First we can connect a rope of single-walled carbon nanotubes(SWNTs) between two electrodes using the electric field. But a SWNTs' rope obtained by the first process was composed of a few of metallic and semi-conducting SWNTs together. The second process is to burn the metallic and semi-conducting nanotubes through applying a voltage. As a result, we can obtain a semi-conducting SWNT device. To make the patterned electrodes, we deposited $SiO_2$(150nm) on a wafer. After then, we made a patterned samples with Ti(200 $\AA$)/Au(300$\AA$). We empirically obtained a electric condition 0.66 $V_{pp}$ /${\mu}{\textrm}{m}$@5MHz. From this result, we verified that most of current go through the metallic nanotubes in this device. When we apply DC voltage between two electrodes, the metallic carbon nanotubes are burnt. Finally, we can obtain a semi-conducting nanotube device which we desire to make. We got the I-V characteristic graph which has shown the semi-conducting property. We hope to apply to the various applications using this selective semi-conducting carbon nanotube deposition method.ethod.

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Apparatus for determining the angular position, speed and/or direction of rotary objects

  • Lim, J.T.;Choi, D.H.;Lee, H.J.
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1986년도 한국자동제어학술회의논문집; 한국과학기술대학, 충남; 17-18 Oct. 1986
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    • pp.596-600
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    • 1986
  • This paper describes a capacitively reading apparatus for determining the angular orientation, speed and/or direction of rotary objects such as shaft, dial hand, counter wheel and the like. The apparatus consists of sensing device and circuit accompanying with said sensing device. The sensing device is provided by arranging many stationary electrodes lying substantially on a surface of a stationary plane member and by arranging rotary electrode lying substantially on a surface of rotary objects to be monitored, in which said rotary electrode is in confronting relationship to some stationary electrodes so as to construct unique capacitors according to the angular position of rotary objects. The angular position of said rotary electrode is determined by sets of stationary electrodes which are in confronting relationship to rotary electrode. A carrier signal is generated by scanning device while scanning said stationarelectrodes, whose periods are in corresponding relationship to said stationary electrodes, respectively. The periods of carrier corresponding to the angular position of said rotary electrode is modulated by a modulation signal generated by detecting device according to said rotary electrode. This apparatus is applied to automatically monitor any kind of storage tank, as well as to automatically read the conventional utility meters such as Watthour meters, Gas meters, Water meters, etc..

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시변전장 측정용 평판형 센서 (Planar-type Sensor for Measuring the Time-varying Electric Fields)

  • 이복희;길경석
    • 센서학회지
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    • 제4권1호
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    • pp.15-20
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    • 1995
  • 본 논문은 시변전장을 측정할 수 있는 평판형 센서에 대하여 기술하였다. 광대역의 전장측정계를 구현하기 한 평판형 센서가 제안되었다. 측정계의 이론적인 원리와 설계방법에 대하여 제시하였으며, 교정실험 및 적용실험을 수행하였다. 교정실험을 통하여 전장측정계의 주파수대역과 감도는 $160\;[Hz]\;{\sim}\;25\;[MHz]$, 1.2 [mV/V/m] 이었다. 적용실험으로 고전압 실험실에서 임펄스전압과 진동성 과도전압에 의해 발생되는 전장을 제안된 측정장치로 측정하였으며, 측정결과는 우수하였다.

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유전상수 센서를 이용한 유압 작동유의 분석을 위한 실험장비 개발 (Development of Experimental Device for Analysis of Hydraulic Oil Characteristics with Dielectric Constant Sensors)

  • 홍성호
    • Tribology and Lubricants
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    • 제37권2호
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    • pp.41-47
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    • 2021
  • An experimental device was developed for analysis of hydraulic oil characteristics with dielectric constant sensors. Online analysis is the most effective method of the three methods used for analyzing lubricant oils. This is because it can monitor the machine condition effectively using oil sensors in real time without requiring excellent analysis skill and eliminates human errors. Determining the oil quality usually requires complex laboratory equipment for measuring factors such as density, viscosity, base number, acid number, water content, additive, and wear debris. However, the electric constant is another indicator of oil quality that can be measured on-site. The electric constant is the ratio of the capacitance of a capacitor using that material as a dielectric, compared with a similar capacitor that has a vacuum as its dielectric. The electric constant affects the factors such as the base oil, additive, temperature, electric field frequency, water content, and contaminants. In this study, the tendency of the electric constant is investigated with a variation of temperature, water content, and dust weight. The experimental device can control working temperature and mix the contaminants with oil. A machine condition monitoring program developed to analyze hydraulic oil is described. This program provides graph and digital values with variation of time. Moreover, it includes an alarm system for when the oil condition is bad.

VHDL을 이용한 구동 시간 설정 밸브 전동 엑추에이터 제어 장치 개발에 관한 연구 (A Study on the Development of Electric Actuator Control Device for Driving Time Setting Valve Using VHDL)

  • 강대국;최영규
    • 한국정보전자통신기술학회논문지
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    • 제13권5호
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    • pp.452-459
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    • 2020
  • 전동 엑추에이터는 사용자의 명령 입력 신호(열림/닫힘/정지)를 받아 엑추에이터 내부의 각종 센서(밸브의 위치, 회전력, 모터의 상태 등)들의 상태를 확인하고 모터를 정/역 제어하여 밸브를 개폐하고 엑추에이터(밸브)의 현재 상태를 출력하는 장치로 댐, 발전소, 상하수도 시설, 송유관 시설 등 다양한 분야에서 사용하는 장치이다. 전동 엑추에이터가 발전소 등에 설치되어 가동 중 문제가 발생할 경우 경제적으로 큰 손실이 발생할 수 있으므로 시스템의 신뢰성이 매우 중요하다. 본 연구에서는 전동 엑추에이터의 안전성을 높이기 위해 소프트웨어적으로 발생할 수 있는 신뢰성 문제를 하드웨어적으로 ON/OFF 시간 설정이 가능한 전동 엑추에이터 컨트롤 장치 개발을 진행하였다. 또한 전동 엑추에이터 제어 장치 개발 환경은 Xilinx 사의 Spartan7 FPGA와 Altium 툴을 활용하여 개발하였다.