• Korean Journal of Materials Research
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• v.5 no.2
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• pp.178-183
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• 1995

Piezoelectric properties of sintered specimen having a tetragonal phase of $Pb_{0.9888}Sr_{0.012}(Zr_{0.52}Ti_{0.48})O_{3}$ were comparatively studied with two different poling methodes, i.e., DC field and corona discharge technique. Internal stress of poled specimens by indentation fracture toughness was analyzed to evaluate degradation phenomenon. As the results, it was confirmed that corona discharge poling technique is practicable and has merits such as low-temperature poling, slow degradation and no electric breakdown comparing to DC field poling. However, corona discharge technique showed lower Kp value than DC field poling.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.12
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• pp.755-760
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• 1999

Various fluoride films were investigated for a gate insulator of thin film transistor application. Conventional oxide containing materials like $SiO_2\;Ta_2O_5\; and \; Al_2O_3$ exhibited high interface states which lead to an increased threshold voltage and poor stability of TFT. In this paper, we investigated gate insulators using a binary matrix system of fluoride such as $CaF_2,\; SrF_2\; MgF_2,\; and\; BaF_2$. These materials exhibited an improvement in lattice mismatch, interface state and electrical stability. MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 5%, breakdown electric field higher than 1.2MV/cm and leakage current density of $10^{-7}A/cm^2$. MIS diode having $Ca_2$ film as an insulation layer exhibited the interface states as low as $1.58\times10^{11}cm^{-2}eV^{-1}$. This paper probes a possibility of new gate insulator materials for TFT applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.338-341
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19$\mu\textrm{m}$. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGET and LTIGBT The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively. Because that the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. We fabricated He proposed LTEIGBT after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V,

• Journal of Institute of Control, Robotics and Systems
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• v.20 no.4
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• pp.408-413
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• 2014

In this paper, we propose a fault diagnosis method based on Park's Vector Approach using the Euler's theorem. If we interpreted it as Euler's theorem, it is possible to easily find the phase angle difference between the healthy condition and the fault condition. And, we analyzed the variation of the phase angle and performed the diagnostic method of the induction motor using feature vectors that were obtained by using a Fourier transform. The analysis of time and speed variation of the motor was performed and, as a result, we could find more soft variations than rough variations. In particular, the analysis of the distortion through each phase shows that two-turn and four-turn shorted motors are linearly separable. In this experiment, we know that the maximum breakdown threshold value for determining steady-state fault detection is 49.0788. Simulation and experimental results show the more detectable than conventional method.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.106-113
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• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.218-224
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• 2016

The surface of Mg alloy, AZ31 and AZ91, were treated by PEO (plasma electrolytic oxidation) in Na-P system electrolyte, with different applied voltage and time. Thickness, roughness and X-ray crystallographic analysis revealed several results. The more applied time and voltage of PEO treated, the thicker oxidized surface coating layer were covered. And surface roughness increased with the thickness of oxidized layer. It was thought that when oxide layer grew, resistivity and breakdown voltage increased with the thickness of layer, and then, the energy of micro plasma need to be higher then before. So, it made craters and pores of surface become greater, which were responsible for the coarse surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.61 no.1
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• pp.13-17
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• 2012

Ionization and Attachment Coefficients in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CH_4$, $CF_4$ and Ar, were used. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4$-Ar mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy. The proposed theoretical simulation techniques in this work will be useful to predict the fundamental process of charged particles and the breakdown properties of gas mixtures.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.4
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• pp.73-79
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• 2002

In this paper, electromagnetic waves radiated from discharge at three-type electrodes(needle-plane, plane-plane and sphere-plane electrode) using AC power source in air are measured and the peculiar patterns of their spectra are reported. The radiated electromagnetic waves were measured in bandwidth of VHF(30-230[MHz]) using a biconical antenna and a spectrum analyzer. When the discharge onset voltage range, high electric field intensity is shown in frequency band of 45, 70, 80[MHz] in case of needle-plane electrode configuration and 40[MHz] in case of plane-plane and sphere-plane electrodes configuration. However, when the breakdown voltage range, the frequency spectrum distribution of radiated electromagnetic waves appear different in the whole frequency range according to the shapes of electrode.