• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.83-87
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• 2020

In this letter, we propose and analyze a new asymmetric structure that can be used for next-generation power semiconductor devices. We compare and analyze the electrical characteristics of the proposed device with respect to those of symmetric devices. The proposed device has a p-emitter on the right side of the cell. The peak electric field is reduced by the shielding effect caused by the p-emitter structure. Consequently, the breakdown voltage is increased. The proposed asymmetric structure has an approximately 100% higher Baliga's figure of merit (~94.22 MW/㎠) than the symmetric structure (~46.93 MW/㎠), and the breakdown voltage of the device increases by approximately 70%.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.335-338
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• 2008

With the improvement of industrial society, the high quality electrical energy, simplification of operation and maintenance, ensuring reliability are being required Also we request urgently change a $SF_6$ for an environment friendly gas insulation material. In this paper the experiments of breakdown characteristics by pressure and gap change of Imitation-Air in model GIS(Gas Insulated Switchgear) were described. Also assess of breakdown characteristics about Imitation-Air and $SF_6$. It is considered in this paper that the results are fundamental data for electric insulation design of Distribution Power Facilities which will be studied and developed in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.164-168
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• 1996

The relation between crystallinity and thermal history in low density polyethylene thin films and their effect on electric conduction phenomena and dielectric breakdown was studied. The low density polythylene thin films obtained by the solution growth method heat-treated at 140[$^{\circ}C$] for 2 h and subsequently cooling to various ways. The degree of crystallinity was estimated by the X-ray diffraction measurement for the specimen of slowly cooling, ICE quenching and liquid nitrogen quenching. The result shows that the crystallinity decreases become faster as the cooling speed increased, and that conduction phenomenon is governed by the space charge limited current in high field. It was found that the dielectric breakdown field increases with an increase in cooling speed and test number in self-healing breakdown method.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1379-1381
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• 1994

In order to investigate the effects of crystal structure in electrical breakdown of polyethylene film. Low molecular materials in polyethylene are removed by the method as follow. Polyethylene was dissolved in xylene and filtered through a glass fiber filter. And then, a polyethylene thin films of thickness $0.5 - 0.9{\mu}m$ are prepared with heat treatment from solution casting. To evaluate the performance of PE film, Electrical breakdown of PE film are measured on M( Al) - I (PE)-M(Al) system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.4
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• pp.164-168
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• 2002

The main hazard leading to breakdown in GIS(Gas Insulated Switchgear) comes from free conducting particles, which can cross between tee electrodes and cause dielectric failure under the influence of the electric field. Bouncing height of the particle can be an important factor to evaluate the possibility of breakdown occurrence. In this paper, how to estimate, outside a GIS, the bouncing height of the particle was newly suggested when GIS is in service. Both experimental results using 362 kV test chamber and computer simulation results on estimating the height were presented and compared with each other.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.263-268
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• 2003

The Electrical insulation design and testing of high temperature superconducting (HTS) coil for high temperature superconducting fault current limiter (HTSFCL) has been performed. Electrical insulating factors of HTS coil for HTSFCL are turn-to-turn, layer-to-layer. The electrical insulation of turn-to-turn depends on surface length, and the electrical insulation of layer-to-layer depends on surface length and breakdown strength of L$N_2$. Therefore, two basic characteristics of breakdown and flashover voltage were experimentally investigated to design electrical insulation for 6.6㎸ Class HTSFCL. We used Weibull distribution to set electric field strength for insulation design. And mini-model HTS coil for HTSFCL was designed by using Weibull distribution and was manufactured to investigate breakdown characteristics. The mini-model HTS coil had passed in AC and Impulse withstand test.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.3
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• pp.321-328
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• 1990

The effect of a small discharge on the A.C (60Hz) breakdown characteristics in SF6 gas has been studied. Various experiments were investigated while varying distance of the rod-plane electrode, the gas pressure, and the magnitude of the small discharge current. Also, the position of the discharge path was observed for the purpose of evident investigation. As the results of this study, authors clarified the shifting mechanism of the position of discharge path with the ratio Rn (E/N distribution at a certain higher tempera-ture due to the small discharge current to E/N distribution at room temperature, E:electric field strength, N:particle number density). Also, the reason for the reduction of the A.C. breakdown voltage was investigated in the presence of a small discharge current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.136-139
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• 2000

Epoxy materials are used as insulation material for electric power cables. In the case of a flow of excess current due to the temperature difference which occurs between the heat of the conductor and the atmosphere, heat degrades connection point of the cables. Also, the mechanical stress, which occurs due to the thermal expansion coefficient of cable connection electrode system and epoxy insulation materials along with the gap between thermal conduction based on the extra high voltage of transmitted voltage, increases possibility of cracks to occur. The relationship between mechanical stress and electrical breakdown mechanism is verified for the epoxy materials such as high toughness epoxy materials, which comes to be used contemporarily, and for the breakdown mechanism of epoxy materials on the multi-stresses (mechanical and electrical) due to the variation of the temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.794-798
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• 2011

This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.