• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.14-15
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• 2009

Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.33-37
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• 2000

Properties of electrical discharge in flames and influence of plasma electrons on gas neutrals are investigated by making use of the ionization cross section of air. Frames have three distinctive features. They are hot, emit light and are weakly ionized. We investigate influence of these three characteristics of flames on the electrical breakdown. It is found that the breakdown electric field in flames is inversely proportional to the flame temperature T$\_$g/, thereby easily generating plasmas in flames. A swarm of low-energy electrons in flames would allow a significant population of electronically excited states of flame molecules to be formed. Therefore, the analysis shows that the electronic excitation of flame molecules may also considerably reduce the breakdown field. Plasma electrons generate atomic oxygen by the electron attachment of oxygen molecules in high-pressure flames. These oxygen atoms are the most reactive radicals in flames for material oxidation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1337-1339
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• 1998

The trench termination scheme is introduced for high voltage devices. The curvature of the depletion region at field limiting ring is critical factor to determine the breakdown voltage. The smooth curvature of the depletion junction alleviate the electric field crowding effect around this region. In the trench field limiting ring, the radius of the depletion region is smaller than conventional field limiting ring, but the distance between every trench is spaced small enough to punchthrough before initiation of local breakdown. The trench field limiting ring on silicon can ne formed by RIE followed by oxidation on side wall surface of the trench, and polysilicon filling. The combined termination of this trench floating field ring and field plate have been designed and analyzed. The breakdown simulation by 2-dimensional TCAD shows that the cylindrical junction breakdown voltage for substrate doping might be 99 percent of the ideal breakdwon voltage for substrate doping concentration of $3\times10^{14}cm^{-3}$ with about $100{\mu}m$ of lateral termination width.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.86-86
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• 2010

Recently, CV, CNCV, CNCV-W cable are used to transmit and distribute electric power. And a lot of researchers put more effort to realize high performance. The dielectric breakdown strength characteristic is a standard to design insulators. Examination of that is a main factor to determine long term insulation performance, which is used to diagnose Insulation deterioration. In this paper, we prepared XLPE, XLPE/nano-filler, LDPE/nano-filler for comparing each of the dielectric breakdown strength characteristics.

• 전기전자학회논문지
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• 제11권4호
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• pp.247-251
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• 2007

The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because there is no JFET resistance. But because of the electric field concentration in the corner of the gate edge, the breakdown voltage decreases. This paper is about the new structure to effectively improve the Vce(sat) voltage without breakdown voltage drop in 1700V NPT type recessed gate IGBT with p floating shielding layer. For the fabrication of the recessed gate IGBT with p floating shielding layer, it is necessary to perform the only one implant step for the shielding layer. Analysis on the Breakdown voltage shows the improved values compared to the conventional recessed gate IGBT structures. The result shows the improvement on Breakdown voltage without worsening other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.

• 전기학회논문지P
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• 제60권1호
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• pp.45-47
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• 2011

Recently, research works for electrical properties on the elastic epoxy have been also progressing to diagnose insulation materials by development of measure technology. The epoxy which specially applied for high voltage instruments have required for the electrical, mechanical and thermal properties. Nanocomposites were made from insulating material epoxy resin using for power transformer as varying g amount of addition of SiO2, we found the change of physical characteristics of nanocomposites by using SEM and XRD. To investigate the electrical properties according to the amount of addition and temperature, tested insulting breakdown in silicon oil. As the result of insulting breakdown testing, the insulting breakdown strength increased according to change of the amount of addition.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.47-53
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• 2007

Ultra thin Si p-n junctions shallower than $300{\AA}$ were fabricated and biased to the avalanche regime. The ultra thin junctions were fabricated to be parallel to the surface and exposed to the surface without $SiO_2$ layer. Those junctions emitted white light and electrons when junctions were biased in the avalanche breakdown regime. Therefore, we could observe the avalanche breakdown region visually. We could also observe the influence of electric field to the current flow visually by observing the white light which correspond to the avalanche breakdown region. Arrayed diodes emit light and electrons uniformly at the diode area. But, the reverse leakage current were larger than those of ordinary diodes, and the breakdown voltage were less than 10V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.226-229
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• 1999

Epoxy compound has been used as insulation material in electrical equipment for a long time because of its excellent electrical, mechanical and chemical properties. Nowdays, becoming higher voltage system, the properties of interface between epoxy and metal insert become more important. The breakdown voltage of epoxy compound for electric material is variable according to the surface roughness of metal insert. Generally, with metal insert sanding, the adhesion strength is enhanced and the breakdown strength is reduced. But in this study, we knew that the adhesion strength became enhanced but the breakdown strength didn\`t reduced with metal insert sanding. So in this study sanding. So in this study, we suggest the optimum interface condition by adjusting the surface roughness.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.281-284
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• 1999

In this paper, the electrical conduction, breakdown strength and dielectric properties were investigated in the interfaces of PET films. The volume resistivity and breakdown strength were decreased; especially the specimens with semiconductive layer showed the lowest breakdown strength. This decrease of electrical properties was appeared by increasing charge density in inhomogeneous layer of PET. The dielectric properties of PET did not show significant difference with PET/PET but the films with semiconductive interface layer showed the increase in capacitance and $tan\delta$ was affected by the PET rather than semiconductive layer. It is assumed that the variation of $tan\delta$ was affected by the dielectric polarization and the leakage current(charge).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1436-1437
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• 2007

This paper presents the experimental results of the dielectric characteristics with temperature changes under highly non-uniform electric field in $SF_6$ gas. The impulse preliminary breakdown developments were investigated by the measurement of predischarge current and breakdown voltage. As a result, the first stremer corona is initiated at the tip of needle electrode, and bridges the test gap. Also the first stremer corona onset and breakdown voltages the negative polarity was much higher than that in the positive polarity in same temperature. In addition, the varition of temperature have a little effect on the positive polarity. On the other hand, in some cases negative polarity corona onset and breakdown voltages increased with increasing a high temperature.