• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.81-88
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• 2010

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $4{\times}10^3\;A/cm^2$ conditions in order to investigate the effect of PCB surface finishs on the growth kinetics of intermetallic compound (IMC) in Sn-3.0Ag-0.5Cu solder bump. The surface finishes of the electrodes of printed circuit board (PCB) were organic solderability preservation (OSP), immersion Sn, and electroless Ni/immersion gold (ENIG). During thermal annealing, the OSP and immersion Sn show similar IMC growth velocity, while ENIG surface finish had much slower IMC growth velocity. Applying electric current accelerated IMC growth velocity and showed polarity effect due to directional electron flow.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.11a
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• pp.151-155
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• 2005

Though the nuclear fusion system has been fused into hydro-nuclear based on thermodynamics by tokamak system, there has been no success story. Because it's impossible to confine high temperatured plasma long Time actually. New nuclear-fusion-system using this nuclear-fusion-method will gather toroidal-magnetic-field by putting Core Block(C shaped torus iron) and toroidal-aluminium coil into toroidal magnetic-field-aluminium. That will arrange the nuclear-fusion-route on a gap fallen out by a part of cut torus-core and mkee the toroidal-an electric-current flow and electrolyze the fusioned-material (an electrolyte) into troidal-electrocity. That consists of troidal-magnetic-fild coil, toroidal-coial fusioned- material, series circuit. So toroidal-electocity will be changed into filament-electrocity and be introjected into fusioned-material. In a sapce on filament-electrocity, the magnetic inhaling-powr will enlarge to input-electrocity outside. This will exceed the Coulomb force and reache the nuclear-fusion. By this phenomenon there be quantity-loss. By this process I could confirmed that Einstein euation$(E=mC^2)$ releases into thermal energy.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.12
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• pp.79-86
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• 2008

This paper presents the experimental results of impulse breakdown characteristics in $SF_6/N_2$ gas mixtures under a highly non-uniform electric field with a change in temperature. The test temperature ranges from -25[$^{\circ}C$] to 25[$^{\circ}C$]. The processes of impulse preliminary breakdown developments were analyzed by the measurements of current pulse and luminous signals. As a result, the temperature dependance of breakdown voltage for the negative polarity was much stronger than that for the positive polarity. When increasing the temperature, The leader stepping time for the negative polarity was shown to be longer than that for the positive polarity. The results presented in this paper can be used as a useful information in designing the gas insulation lines with prominent ability for lightning surge.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.3
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• pp.431-437
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• 1998

In this paper, we have investigated the electrical properties of ultra-thin nitrided oxide(NO) and re-oxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. Especially, we have studied a variation of I-V characteristics, gate voltage shift, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_bd$) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SIO$\_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and (Q$\_bd$) performance over the NO film and SIO$\_2$, while maintaining a similar electric field dependence compared with NO layer.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.12
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• pp.2618-2624
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• 2009

Harmonics (or distortion in wave form) has always existed in electrical power systems. It is harmless as long as its level is not substantial. However, with the recent rapid advancement of power electronics technology, so-called nonlinear loads, such as variable frequency drives for motor power/speed control, are increasingly finding their way to shipboard or offshore applications. In this paper a new approach to direct torque control (DTC) of induction motor drive is presented. In comparison with the conventional DTC methods the inverter switching frequency is constant and is dramatically increased, requiring neither any increase of the sampling frequency, nor any high frequency dither signal. The well-developed space vector modulation technique is applied to inverter control in the proposed DTC-based induction motor drive system, thereby dramatically reducing the current harmonics. As compared to the existing DTC approach with constant inverter switching frequency, the presented new approach does not invoke any concept of deadbeat control, thereby dramatically reducing the computations.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1511-1517
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• 2008

The magneto-rheological fluid expresses different cohesiveness according to the strength of the external electric current. The magneto-rheological fluid damper, which uses such characteristics of the fluid, generates shear force due to the fluid's cohesiveness. The core can be said to determine the magneto-rheological fluid damper's performance. This study uses the finite element analysis to compare the performance of different electromagnetic forces, which are affected by the shapes of the coil, and thus to find the optimum design for the core. In addition, as a step to construct a high-efficient damper, we suggest a type of damper that can control multiple coils and compares the performance of this damper and that of the standard damper by comparing the performance of their electro-magnetic fields.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.4
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• pp.549-560
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• 1993

A simple closed form approximation is developed by a new approach presented in this paper for the microstrip surface dyadic Green's function which arises in the problem of an electric current point source on an infinite planar grounded dielectric substrate. This closed form approximation includes the effects of the space wave, the surface wave and their coupling within the transition region near the source, and remains accurate as near as $0.1{\pi}_1$ from the source point for a substrate thickness as large as $0.04{\pi}_1$, where, ${\pi}_1$, is the free space wavelength, This result can significantly facilitate the rigorous moment method analysis of microstrip antenna arrays on relatively this substrates of practical interest. Numerical results illustrating the accuracy of the closed form approximation are presented and CPU times associated with some mutual impedance calculations are also included.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.54 no.4
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• pp.185-192
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• 2005

This paper proposes a DRMS(Distribution Remote Management System) which can enhance highly the economics of automatic metering system and the power quality supplied to the electric customer improving the efficiency of the meter reading, voltage management and load management work by realizing the remote meter reading, the remote voltage management and the remote load management based on the ADWHM(Advanced Digital Watt Hour Meter). The DRMS is designed so that the voltage management and load management work in remote site can be processed by collecting the voltage pattern and current pattern as well as watt hour data from all ADWHMs one time every month regularly or from special ADWHMS several time irregularly, A new on-line voltage and load management strategy based on the ADWHM is designed by analyzing the existing voltage management and load management process. Also, DRMS is designed so that watt-hour data, voltage pattern data, load pattern data and power factor data can be collected selectively according to the selection of user to assist effectively the methodology. Remote management program and database of the DRMS are implemented based on Visual C++, MFC and database library of MS. Also, DRMS is designed so as to communicate with the ADWHM using RS232C-TCP/IP converter and ADSL. The effectiveness of the remote metering function is proven by collecting and analyzing the data after ADWHMs installed in any site. The developed strategy and program also is verified through the simulation of voltage management and load management.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.226-230
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• 2018

Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.