• Title/Summary/Keyword: Edge devices

Search Result 451, Processing Time 0.038 seconds

Estimation of Fetal Dose during Radiation Therapy of Pregnant Patient (임산부의 방사선치료 시 태아선량 평가)

  • Jung, Chi-Hoon;Kim, Chan-Yong;Kim, Bo-Gyum;Seo, Suk-Jin;Yoo, Sook-Hyun;Park, Heung-Deuk
    • The Journal of Korean Society for Radiation Therapy
    • /
    • v.19 no.1
    • /
    • pp.35-41
    • /
    • 2007
  • Purpose: To evaluate the effectiveness of a simple and practical shielding device to reduce the fetal dose for a pregnant patient undergoing radiation therapy of brain metastasis. Materials and Methods: The dose to the fetus was evaluated by simulating the treatments using the anthropomorphic phantom. The prescription dose at mid-brain is $300cGy{\times}10$ fractions with 6 MV photon with $18{\times}22cm^2$ field size. The additional shielding devices to reduce the fetal dose are a shielding wall, cerrobend plates and lead (Pb) sheets over acrylic bridge. Various points of measurement with off-field distance were detected by using ion-chamber (30, 40, 50, and 60 cm) with and without the shielding devices and TLD (30, 40, 50, 60, and 70 cm) only with the shielding devices. Results: The doses to the fetus without shielding were 3.20, 3.21, 1.44, 0.90 cGy at the distances of 30, 40, 50, and 60 cm from the treatment field edge. With shielding, the doses were reduced to 0.88, 0.60, 0.35, 0.25 cGy, and the ratio of the shielding effect varied from 70% to 80%. TLD results were 1.8, 1.2, 0.8, 1.2, and 0.8 cGy (70 cm). The total dose to the fetus was expected to be under 1 cGy during the entire treatment. Conclusion: The essential point during radiation therapy of pregnant patient would be minimizing the fetal dose. 10 cGy to 20 cGy is the threshold dose for fetal radiation effects. Our newly developed device reduced the fetal dose far below the safe level. Therefore, our additional shielding devices are useful and effective to reduce the fetal dose.

  • PDF

Design Evaluation Model Based on Consumer Values: Three-step Approach from Product Attributes, Perceived Attributes, to Consumer Values (소비자 가치기반 디자인 평가 모형: 제품 속성, 인지 속성, 소비자 가치의 3단계 접근)

  • Kim, Keon-Woo;Park, Do-Hyung
    • Journal of Intelligence and Information Systems
    • /
    • v.23 no.4
    • /
    • pp.57-76
    • /
    • 2017
  • Recently, consumer needs are diversifying as information technologies are evolving rapidly. A lot of IT devices such as smart phones and tablet PCs are launching following the trend of information technology. While IT devices focused on the technical advance and improvement a few years ago, the situation is changed now. There is no difference in functional aspects, so companies are trying to differentiate IT devices in terms of appearance design. Consumers also consider design as being a more important factor in the decision-making of smart phones. Smart phones have become a fashion items, revealing consumers' own characteristics and personality. As the design and appearance of the smartphone become important things, it is necessary to examine consumer values from the design and appearance of IT devices. Furthermore, it is crucial to clarify the mechanisms of consumers' design evaluation and develop the design evaluation model based on the mechanism. Since the influence of design gets continuously strong, various and many studies related to design were carried out. These studies can classify three main streams. The first stream focuses on the role of design from the perspective of marketing and communication. The second one is the studies to find out an effective and appealing design from the perspective of industrial design. The last one is to examine the consumer values created by a product design, which means consumers' perception or feeling when they look and feel it. These numerous studies somewhat have dealt with consumer values, but they do not include product attributes, or do not cover the whole process and mechanism from product attributes to consumer values. In this study, we try to develop the holistic design evaluation model based on consumer values based on three-step approach from product attributes, perceived attributes, to consumer values. Product attributes means the real and physical characteristics each smart phone has. They consist of bezel, length, width, thickness, weight and curvature. Perceived attributes are derived from consumers' perception on product attributes. We consider perceived size of device, perceived size of display, perceived thickness, perceived weight, perceived bezel (top - bottom / left - right side), perceived curvature of edge, perceived curvature of back side, gap of each part, perceived gloss and perceived screen ratio. They are factorized into six clusters named as 'Size,' 'Slimness,' 'No-Frame,' 'Roundness,' 'Screen Ratio,' and 'Looseness.' We conducted qualitative research to find out consumer values, which are categorized into two: look and feel values. We identified the values named as 'Silhouette,' 'Neatness,' 'Attractiveness,' 'Polishing,' 'Innovativeness,' 'Professionalism,' 'Intellectualness,' 'Individuality,' and 'Distinctiveness' in terms of look values. Also, we identifies 'Stability,' 'Comfortableness,' 'Grip,' 'Solidity,' 'Non-fragility,' and 'Smoothness' in terms of feel values. They are factorized into five key values: 'Sleek Value,' 'Professional Value,' 'Unique Value,' 'Comfortable Value,' and 'Solid Value.' Finally, we developed the holistic design evaluation model by analyzing each relationship from product attributes, perceived attributes, to consumer values. This study has several theoretical and practical contributions. First, we found consumer values in terms of design evaluation and implicit chain relationship from the objective and physical characteristics to the subjective and mental evaluation. That is, the model explains the mechanism of design evaluation in consumer minds. Second, we suggest a general design evaluation process from product attributes, perceived attributes to consumer values. It is an adaptable methodology not only smart phone but also other IT products. Practically, this model can support the decision-making when companies initiative new product development. It can help product designers focus on their capacities with limited resources. Moreover, if its model combined with machine learning collecting consumers' purchasing data, most preferred values, sales data, etc., it will be able to evolve intelligent design decision support system.

Characteristics of ZnO Nanorod/ZnO/Si(100) Grown by Hydrothermal Method (수열법으로 성장한 ZnO Nanorod/ZnO/Si(100)의 특성)

  • Jeong, Min-Ho;Jin, Yong-Sik;Choi, Sung-Min;Han, Duk-Dong;Choi, Dae-Kue
    • Korean Journal of Materials Research
    • /
    • v.22 no.4
    • /
    • pp.180-184
    • /
    • 2012
  • Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.

Study for applying the augmented reality onto postage stamps (우표의 증강현실 적용에 관한 연구)

  • Lee, Ki Ho
    • Cartoon and Animation Studies
    • /
    • s.33
    • /
    • pp.503-529
    • /
    • 2013
  • The commemorative AR postage stamps which are the world first presented at The YEOSU EXPO 2012 has had meaning of communicating with future in this present from a convergence that the most analog medium is using now and that the AR is cutting edge of digital technology. The AR stamps printed 10 kind out of 33 commemorative stamps. These have great significance that is artistic value than that is world first. The applied AR images are not only expressed 3D real images but also artic represented and signifying each stamp images from visualized creativity process, and build 'new art space' that is new concept between on real(analog) and virtual(digital). This study analyzes meaning of images and then makes concept of AR contents design. The processing is designed and considered the meaning of architectures and environments, and the regional specific feature of the Yeosu with surrealistic graphic concept. The 10 of deducted images were expressed after AR coding such as visual arts. This study realized markerless 3D image tracking AR stamps and deducted research result are; the first, it was able to figure out how to realize AR in the process of registering the reference images, coordinating transformation, and hybriding AR on the stamps for the mobile devices. The second, it was able to be seeked a possibility of new virtual exhibition space. The third, it was able to know possibility of satisfaction of immersing with visual formativeness and usability with informativity.

Big Data Based Dynamic Flow Aggregation over 5G Network Slicing

  • Sun, Guolin;Mareri, Bruce;Liu, Guisong;Fang, Xiufen;Jiang, Wei
    • KSII Transactions on Internet and Information Systems (TIIS)
    • /
    • v.11 no.10
    • /
    • pp.4717-4737
    • /
    • 2017
  • Today, smart grids, smart homes, smart water networks, and intelligent transportation, are infrastructure systems that connect our world more than we ever thought possible and are associated with a single concept, the Internet of Things (IoT). The number of devices connected to the IoT and hence the number of traffic flow increases continuously, as well as the emergence of new applications. Although cutting-edge hardware technology can be employed to achieve a fast implementation to handle this huge data streams, there will always be a limit on size of traffic supported by a given architecture. However, recent cloud-based big data technologies fortunately offer an ideal environment to handle this issue. Moreover, the ever-increasing high volume of traffic created on demand presents great challenges for flow management. As a solution, flow aggregation decreases the number of flows needed to be processed by the network. The previous works in the literature prove that most of aggregation strategies designed for smart grids aim at optimizing system operation performance. They consider a common identifier to aggregate traffic on each device, having its independent static aggregation policy. In this paper, we propose a dynamic approach to aggregate flows based on traffic characteristics and device preferences. Our algorithm runs on a big data platform to provide an end-to-end network visibility of flows, which performs high-speed and high-volume computations to identify the clusters of similar flows and aggregate massive number of mice flows into a few meta-flows. Compared with existing solutions, our approach dynamically aggregates large number of such small flows into fewer flows, based on traffic characteristics and access node preferences. Using this approach, we alleviate the problem of processing a large amount of micro flows, and also significantly improve the accuracy of meeting the access node QoS demands. We conducted experiments, using a dataset of up to 100,000 flows, and studied the performance of our algorithm analytically. The experimental results are presented to show the promising effectiveness and scalability of our proposed approach.

Defect-related yellowish emission of un doped ZnO/p-GaN:Mg heterojunction light emitting diode

  • Han, W.S.;Kim, Y.Y.;Ahn, C.H.;Cho, H.K.;Kim, H.S.;Lee, J.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.327-327
    • /
    • 2009
  • ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

  • PDF

Chimie Douce Reaction to Layered High-$T_c$ Superconducting / Super-ionic Conducting Heterostructures

  • Kim, Young-Il;Hwang, Seong-Ju;Yoo, Han-Ill;Choy, Jin-Ho
    • The Korean Journal of Ceramics
    • /
    • v.4 no.2
    • /
    • pp.95-98
    • /
    • 1998
  • We have developed new type of superconducting-superionic conducting nanohybrids, $Ag_xI_wBi_2Sr_2Ca_{n-1}Cu_nO_y$ (n=1 and 2) by applying the chimie douce reaction to the superconducting Bi-based cuprates. These nanohybrids can be achieved by the stepwise intercalation whereby the $Ag^+$ ion is thermally diffused into the pre-intercalated iodine sublattice of $IBi_2Sr_2Ca_{n-1}Cu_nO_y$. According to the X-ray diffraction analysis, the Ag-I intercalates are found to have an unique heterostructure in which the superionic conducting Ag-I layer and the superconducting $IBi_2Sr_2Ca_{n-1}Cu_nO_y$ layer are regularly interstratified with a remarkable basal increment of ~7.3$\AA$. The systematic XAS studies demonstrate that the intercalation of Ag-I accompanies the charge transfer between host and guest, giving rise to a change in hole concentration of $CuO_2$ layer and to a slight $T_c$ change. The Ag K-edge EXAFS result reveals that the intercalated Ag-I has a $\beta$-AgI-like local structure with distorted tetrahedral symmetry, suggesting a mobile environment for the intercalated $Ag^+$ ion. In fact, from ac impedance analyses, we have found that the Ag-I intercalates possess a fast ionic conductivity ($\sigma_i=10^{-1.4}\sim 10^{-2.6}\Omega^{-1}\textrm{cm}^{-1}\;at\;270^{\circ}C$ with an uniform activation energy ($\DeltaE_a=0.22\pm 0.02$ eV). More interesting finding is that these intercalates exhibit high electronic conducting as well as ionic ones ($t_i$=0.02~0.60) due to their interstratified structure consisting of superionic conducting and superconducting layers. In this respect, these new intercalates are expected to be useful as an electrode material in various electrochemical devices.

  • PDF

Quality Assurance of Multileaf Collimator Using Electronic Portal Imaging (전자포탈영상을 이용한 다엽시준기의 정도관리)

  • ;Jason W Sohn
    • Progress in Medical Physics
    • /
    • v.14 no.3
    • /
    • pp.151-160
    • /
    • 2003
  • The application of more complex radiotherapy techniques using multileaf collimation (MLC), such as 3D conformal radiation therapy and intensity-modulated radiation therapy (IMRT), has increased the significance of verifying leaf position and motion. Due to thier reliability and empirical robustness, quality assurance (QA) of MLC. However easy use and the ability to provide digital data of electronic portal imaging devices (EPIDs) have attracted attention to portal films as an alternatives to films for routine qualify assurance, despite concerns about their clinical feasibility, efficacy, and the cost to benefit ratio. In this study, we developed method for daily QA of MLC using electronic portal images (EPIs). EPID availability for routine QA was verified by comparing of the portal films, which were simultaneously obtained when radiation was delivered and known prescription input to MLC controller. Specially designed two-test patterns of dynamic MLC were applied for image acquisition. Quantitative off-line analysis using an edge detection algorithm enhanced the verification procedure as well as on-line qualitative visual assessment. In conclusion, the availability of EPI was enough for daily QA of MLC leaf position with the accuracy of portal films.

  • PDF

Laser-based THz Time-Domain Spectroscopy and Imaging Technology (레이저 기반 테라헤르츠 시간영역 분광 및 영상 기술)

  • Kang, Kwang-Yong;Kwon, Bong-Joon;Paek, Mun Cheol;Kang, Kyeong Kon;Cho, Suyoung;Kim, Jangsun;Lee, Senung-Churl;Lee, Dae-sung
    • Journal of Sensor Science and Technology
    • /
    • v.27 no.5
    • /
    • pp.317-327
    • /
    • 2018
  • Terahertz (THz) time-domain spectroscopy(TDS), imaging techniques, and related systems have become mature technologies, widely used in many universities and research laboratories. However, the development of creative technologies still requires improved THz application systems. A few key points are discussed, including the innovative advances of mode-locking energy-emitting semiconductor lasers and better photoconductive semiconductor quantum structures. To realize a compact, low cost, and high performance THz system, it is essential that THz spectroscopy and imaging technologies are better characterized by semiconductor and nano-devices, both static and time-resolved. We introduce the THz spectroscopy and imaging systems, the OSCAT(Optical Sampling by laser CAvity Tuning) system and the ASOPS(ASynchronous Optical Sampling) system, are constructed by our research team. We report on the THz images obtained from their use.

A Study of Failure Mechanism through abnormal AlXOY Layer after pressure Cooker Test for DRAM device (DRAM 소자의 PCT 신뢰성 측정 후 비정상 AlXOY 층 형성에 의해 발생된 불량 연구)

  • Choi, Deuk-Sung;Jeong, Seung-Hyun;Choi, Chae-Hyoung
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.25 no.3
    • /
    • pp.31-36
    • /
    • 2018
  • This research scrutinizes the reason of failure after pressure cooker test (PCT) for DRAM device. We use the physical inspecting tools, such as microscope, SEM and TEM, and finally find the discolor phenomenon, corrosion of Al and delamination of inter-metal dielectric (IMD) in the failed devices after PCT. Furthermore, we discover the abnormal $Al_XO_Y$ layer on Al through the careful additional measurements. To find the reason, we evaluate the effect of package ball size and pinhole in passivation layer. Unfortunately, those aren't related to the problems. We also estimate halide effect of Al. The halogens such like Cl are contained within EMC material. Those result in the slight improving of PCT characteristics but do not perfectly solve the problems. We make a hypothesis of Galvanic corrosion. We can find the residue of Ti at the edge of pad open area. We can see the improving the PCT characteristics by the time split of repair etch. The possible mechanism of the PCT failure can be deduced as such following sequence of reactions. The remained Ti reacts on the pad Al by Galvanic corrosion. The ionized Al is easily react with the $H_2O$ supplied under PCT environment, and finally transfers to the abnormal $Al_XO_Y$ layer.