• Title/Summary/Keyword: Edge devices

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Research to Achieve Uniform Plasma in Multi-ground Capacitive Coupled Plasma

  • Park, Gi-Jeong;Lee, Yun-Seong;Yu, Dae-Ho;Lee, Jin-Won;Lee, Jeong-Beom;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.247.1-247.1
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    • 2014
  • The capacitive coupled plasma is used widely in the semiconductor industries. Especially, the uniformity of the industrial plasma is heavily related with defect ratio of devices. Therefore, the industries need the capacitive coupled plasma source which can generate the uniform plasma and control the plasma's uniformity. To achieving the uniformity of the large area plasma, we designed multi-powered electrodes. We controlled the uniformity by controlling the power of each electrode. After this work, we started to research another concept of the plasma device. We make the plasma chamber that has multi-ground electrodes imaginary (CST microwave studio) and simulate the electric field. The shape of the multi-ground electrodes is ring type, and it is same as the shape of the multi-power electrodes that we researched before. The diameter of the side electrode's edge is 300mm. We assumed that the plasma uniformity is related with the impedance of ground electrodes. Therefore we simulated the imaginary chamber in three cases. First, we connected L (inductor) and C (capacitor) at the center of multi-ground electrodes. Second, we changed electric conductivity of multi-ground electrode. Third, we changed the insulator's thickness between the center ground electrode and the side ground electrode. The driving frequency is 2, 13.56 and 100 MHz. We switched our multi-powered electrode system to multi-ground electrode system. After switching, we measured the plasma uniformity after installing a variable vacuum capacitor at the ground line. We investigate the effect of ground electrodes' impedance to plasma uniformity.

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Design and Implementation of a Mobile Middleware System for Mobile Business (모바일 비즈니스를 위한 모바일 미들웨어 시스템 설계 및 구현)

  • Lee, Il-Joo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39B no.2
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    • pp.102-113
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    • 2014
  • Present communication and network environment have been moving rapidly toward wireless and mobile base from existing wired internet base. This change of trend influences greatly on business methods accordingly. Therefore many enterprises are trying hard to adopt mobile business in order to gain competitive edge of their products and they are in need of more effective and stable mobile solutions. However, the method of establishing optimal mobile computing environment and how to handle existing business process and use vast amount of database are still needed. Therefore this paper tries to realize a mobile middleware system as a mobile business establishment supporting tool that could link various computational resource on wired internet with wireless LAN, mobile phone network, and mobile devices. To accomplish that specific goal, this paper provides a powerful tool of mobile and wireless application data access that could expand the line of business already set up in general enterprises easily and rapidly into mobile environment. When this suggested solution is applied in the field of industry, it can economically change legacy business process into mobile environment without having to change existing logic and resources at all.

Infinitely high selectivity etching of SnO2 binary mask in the new absorber material for EUVL using inductively coupled plasma

  • Lee, S.J.;Jung, C.Y.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.285-285
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    • 2011
  • EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

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The Structural and Optical Properties of GaAs- SiO2 Composite Thin Films With Varying GaAs Nano-particle Size (GaAs 나노입자 크기에 따른 SiO2 혼합박막의 구조적 광학적 특성)

  • Lee, Seong-Hun;Kim, Won-Mok;Sin, Dong-Uk;Jo, Seong-Hun;Jeong, Byeong-Gi;Lee, Taek-Seong;Lee, Gyeong-Seok
    • Korean Journal of Materials Research
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    • v.12 no.4
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    • pp.296-303
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    • 2002
  • For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.

Design Optimization of Passive Control Devices for Dynamic Stall Control (동적실속 수동제어장치 최적설계)

  • Joo, Wan-Don;Lee, Bo-Sung;Yee, Kwan-Jung;Lee, Dong-Ho
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.33 no.1
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    • pp.11-19
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    • 2005
  • In order to improve dynamic stall characteristics of an oscillating airfoil, optimal design has been performed for fixed nose droop and Gurney flap. Fixed nose droop is known to be very effective to improve pitching moment characteristics but may cause degeneration of aerodynamic lift at the same time. On the other hand, Gurney flap has the opposite characteristics. For fixed nose droop, location and angle are chosen as design variables, while length is defined as design variable for Gurney flap. Higher order response surface methodology and sensitivity based optimal design method are employed to handle highly nonlinear problem such as dynamic stall. Optimal design has been performed so that lift and pitching moment are simultaneously improved. The design results show that aerodynamic characteristics can be remarkably improved through present design approach and the present passive control method is as good as active control method which combines variable nose droop and Gurney flap.

Realistic and Efficient Radio Propagation Model for V2X Communications

  • Khokhar, Rashid Hafeez;Zia, Tanveer;Ghafoor, Kayhan Zrar;Lloret, Jaime;Shiraz, Muhammad
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.7 no.8
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    • pp.1933-1954
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    • 2013
  • Multiple wireless devices are being widely deployed in Intelligent Transportation System (ITS) services on the road to establish end-to-end connection between vehicle-to-vehicle (V2V) and vehicle-to-infrastructure (V2I) networks. Vehicular ad hoc networks (VANETs) play an important role in supporting V2V and V2I communications (also called V2X communications) in a variety of urban environments with distinct topological characteristics. In fact, obstacles such as big buildings, moving vehicles, trees, advertisement boards, traffic lights, etc. may block the radio signals in V2X communications. Their impact has been neglected in VANET research. In this paper, we present a realistic and efficient radio propagation model to handle different sizes of static and moving obstacles for V2X communications. In the proposed model, buildings and large moving vehicles are modeled as static and moving obstacles, and taken into account their impact on the packet reception rate, Line-of-sight (LOS) obstruction, and received signal power. We use unsymmetrical city map which has many dead-end roads and open faces. Each dead-end road and open faces are joined to the nearest edge making a polygon to model realistic obstacles. The simulation results of proposed model demonstrates better performance compared to some existing models, that shows proposed model can reflect more realistic simulation environments.

A study on how to Promote Smart Tourism through Case Analysis of Smart Tourism Utilizing New ICT Technologies (ICT 신기술을 활용한 스마트관광의 추진사례 분석 및 활성화 방안 연구)

  • Jeong, Byeong-Ok
    • The Journal of the Korea Contents Association
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    • v.15 no.11
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    • pp.509-523
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    • 2015
  • With the introduction of smart devices as a new channel of information distribution, the mass tourism that has been dominating the travel scene is being transformed into individual tourism. Therefore, it is more than important to establish an advanced smart tourism environment using cutting-edge ICT technologies in order to go into one of tourism developed countries. In line with that, this study draws both local and international cases to show where smart tourism stands now by mapping out problems and solutions by category. Firstly, in terms of infrastructure, establishing distribution platform and big data analyzing systems were suggested. Secondly, to fit the needs of consumers, converged tourism content and user experience based content development are in need. Lastly, in terms of governance forming public-private consultative body and incubating creative tourism companies are suggested. The study results will serve as a fruitful reference to those who want to establish business strategy related to smart tourism.

A Study on the Electrical Characteristics of Ultra Thin Gate Oxide

  • Eom, Gum-Yong
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.5
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    • pp.169-172
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    • 2004
  • Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ~ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

A Musical Symbol recognition By Using Graphical Distance Measures (그래프간 유사도 측정에 의한 음악 기호 인식)

  • Jun, Jung-Woo;Jang, Kyung-Shik;Heo, Gyeong-Yong;Kim, Jai-Hie
    • The Journal of the Acoustical Society of Korea
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    • v.15 no.1
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    • pp.54-60
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    • 1996
  • In most pattern recognition and image understanding applications, images are degraded by noise and other distortions. Therefore, it is more relevant to decide how similar two objects are rather than to decide whether the two are exactly the same. In this paper, we propose a method for recognizing degraded symbols using a distance measure between two graphs representing the symbols. a symbol is represented as a graph consisting of nodes and edges based on the run graph concept. The graph is then transformed into a reference model graph with production rule containing the embedding transform. The symbols are recognized by using the distance measure which is estimated by using the number of production rules used and the structural homomorphism between a transformed graph and a model graph. the proposed approach is applies to the recognition of non-note musical symbols and the result are given.

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A Study on File Sharing Mechanism for Network Energy Efficiency: Designing & Implementation Proxying System (네트워크 에너지 효율향상을 고려한 File Sharing 기술 연구)

  • Yun, Jung-Mee;Lee, Sang-Hak
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.4 no.2
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    • pp.135-140
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    • 2011
  • Currently, studies have show that the network related energy consumption are increasing. and part of overall energy consumption of our society are too. So, that is important to look for energy-efficient network applications and protocols. A most of network energy consumption are due to network edge devices. in this paper, in order to cut down the emissions of carbon dioxide from ICT business, which contributes 2% of the global energy consumption, it is necessary to understand energy consumption in peer-to-peer system. In this paper, in this paper we propose a architecture based on the introduction of a p2p proxy. The model is analyzed analytically and numerically to reveal how these factors influence the overall power consumption in both steady state and flash crowd information exchange scenarios. Specifically, our results show that the proxy-based solution can provide up to 50% reduction in the energy consumption and, at the same time, a significant reduction in the average file download time.