• Applied Microscopy
• /
• v.46 no.4
• /
• pp.206-216
• /
• 2016

This communication is to elucidate the state-of-the-art of techniques necessary to gather information on a new class of nanoelectronic devices known as memristors and related resistive switching devices, respectively. Unlike classical microelectronic devices such as transistors, the chemical and structural variations occurring upon switching of memristive devices require cutting-edge electron microscopy techniques. Depending on the switching mechanism, some memristors call for the acquisition of atomically resolved structural data, while others rely on atomistic chemical phenomena requiring the application of advanced X-ray and electron spectroscopy to correlate the real structure with properties. Additionally, understanding resistive switching phenomena also necessitates the application not only of pre- and post-operation analysis, but also during the process of switching. This highly challenging in situ characterization also requires the aforementioned techniques while simultaneously applying an electrical bias. Through this review we aim to give an overview of the possibilities and challenges as well as an outlook onto future developments in the field of nanoscopic characterization of memristive devices.

• Proceedings of the Optical Society of Korea Conference
• /
• 1991.07a
• /
• pp.129-134
• /
• 1991

반도체 물질들은 일반적으로 흡수 끝 (absorption edge) 근처에서 비선형 광학 계수가 이례적으로 크고, 그 반응 속도가 빠른 특성을 갖고 있다. 본 논문에서는 반도체와 반도체 미세구조에 있어서의 비선형 광학적 특성 및 초고속 논리 광소자로서의 응용을 고찰하였다.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.133-133
• /
• 1999

We have fabricated and tested a simple circuit of the rapid single-flux-quantum(RSFQ) four-stage shift register using a single layer high-T$_c$ superconducting (HTS) YBa$_2Cu_3O_{7-x}$ (YBCO) thin film structure with 9 step-edge Josephson junctions. The circuit includes two read superconducting quantum interference devices(SQUID) and four stages. To establish a robust HTS RSFQ device fabrication process, we have focussed the reproducible process of sharp and straight step-edge formation as well as the ratio of film thickness to step height t/h. The spread of step-edge junction parameters was measured from each13 junctions with t/h=l/3, l/2, and 2/3 at various temperatures. We have demonstrated the simplified operation of the shift register at 65 K..

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2015.05a
• /
• pp.267-269
• /
• 2015

In the modern society, the images provide the most effective information in multi-devices and the edge includes important feature information in such images. This edge is used as an essential preconditioning process in several application fields and many studies have been carried out in order to obtain the excellent images. The methods of Sobel and Roberts which are generally known are simple to implement the images but bring more or less insufficient processing result. Thus, this paper proposed an edge detection algorithm using the area averaging of segmented mask in order to supplement the problems of the current methods and compared it with such current methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.191-192
• /
• 2005

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

• IEMEK Journal of Embedded Systems and Applications
• /
• v.18 no.4
• /
• pp.141-150
• /
• 2023

Currently, various companies are actively participating in research and development of drone delivery services. Existing studies do not comprehensively provide integrated functions for future drone delivery services such as mission automation, customer verification, and overcoming performance limitations, which can lead to high manpower demand, reduced user service trust, and potentially overloading low-end devices. Therefore, this study proposes a drone mission automation system (DMAS) using EdgeCPS technology to provide the three aforementioned functions in an integrated manner. Real-world experiments were conducted to evaluate the proposed system, demonstrating that the DMAS components operate according to the specified roles in the delivery scenario. In addition, the system achieved user verification with a similarity of more than 90% in the process of receiving the product, and verified a faster inference speed and a lower resource share than the existing method.

• Journal of Advanced Navigation Technology
• /
• v.28 no.1
• /
• pp.142-148
• /
• 2024

It is difficult to apply authentication methods of existing wired or wireless networks to Internet of Things (IoT) devices due to their poor environment, low capacity, and low-performance processor. In particular, there are many problems in applying methods such as blockchain to the IoT environment. In this paper, edge computing is used to serve as a server that authenticates disposable templates among biometric information in an IoT environment. In this environment, we propose a lightweight and strong authentication procedure using the IoT-edge computing (IoT-EC) system based on elliptic curve cryptographic (ECC) and evaluate its safety.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.3
• /
• pp.165-169
• /
• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the breakdown voltage of the device edge and device unit cells was found to be lower than the 'ideal' breakdown voltage limited by the semi-infinite junction profile. In this paper, Propose the methods for field ring design by DOE (Design of Experimentation). So The field ring can be improve for breakdown voltage and optimization.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.587-587
• /
• 2013

ZnS is well-known direct band gap II-VI semiconductor, and it attracts intense interest due to its excellent properties of luminescence which enable ZnS to have promising materials for optical, photonic and electronic devices. Especially, the emission wavelength of ZnS falls in the UV absorption band of most organic compoundsand biomolecules, thus it is envisaged that ZnS based devices may find applications in increasingly important fluorescence sensing. We have developed a facile and effective one-step process for the fabrication of single-crystalline and pure-wurtzite ZnS nanostructures possessing sharp band-edge emission at room-temperature having diverse length-to-width ratios. Each of nanostructures was composed of chemically pure, structurally uniform, single-crystalline, and defect-free ZnS. These features not only suppress trap or surface states emission centered at 420 nm, but also enhance UV band-edge emission centered at 327 nm, which give as-synthesized our ZnS nanostructures possible sharp UV emission at room temperature. The reaction medium consisting of mixed solvents such as hydrazine, ethylenediamine, and water as well as proper reaction time and temperature have played an important role in the crystallinity and optical properties of ZnS nanostructures. As-synthesized our ZnS nanostructures possessing sharp UV emission guarantee high potential for both fundamental research and technological applications.

• Proceedings of the Korea Information Processing Society Conference
• /
• 2023.11a
• /
• pp.30-33
• /
• 2023

The recent scholarly focus has been directed towards the expeditious and accurate detection of salient objects, a task that poses considerable challenges for resource-limited edge devices due to the high computational demands of existing models. To mitigate this issue, some contemporary research has favored inference speed at the expense of accuracy. In an effort to reconcile the intrinsic trade-off between accuracy and computational efficiency, we present novel model for salient object detection. Our model incorporate group-wise attentive module within the decoder of the encoder-decoder framework, with the aim of minimizing computational overhead while preserving detection accuracy. Additionally, the proposed architectural design employs attention mechanisms to generate boundary information and semantic features pertinent to the salient objects. Through various experimentation across five distinct datasets, we have empirically substantiated that our proposed models achieve performance metrics comparable to those of computationally intensive state-of-the-art models, yet with a marked reduction in computational complexity.