• 제목/요약/키워드: Edge Dislocation

검색결과 44건 처리시간 0.028초

Growth parameters and formation of slip plane in ZnWO4 single crystals by the Czochralski method

  • Lim, Chang-Sung
    • 한국결정성장학회지
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    • 제20권5호
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    • pp.202-206
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    • 2010
  • Single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The growth parameters and the formation of slip plane in $ZnWO_4$ crystals were studied. $ZnWO_4$ crystals had a cleavage plane of (010). The dislocation density on the (010) plane at the center of the crystal was lower than that of the edge region. It was inferred that the high density at the edge of the crystals was caused by the thermal gradient during crystal growth. The etch pit arrangement revealed the (100) slip plane to be most active during crystal growth.

EFG법에 의한 ${\gamma}-6Bi_2O_3 {\cdot}SiO_2$(BSO)단결정의 육성 (Growth of ${\gamma}-6Bi_2O_3 {\cdot}SiO_2$( Single Crystals by EFG Method)

  • 김호건;유건종
    • 한국결정성장학회지
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    • 제1권1호
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    • pp.26-38
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    • 1991
  • 광기능소자로 응용성이 넓은 전기광학결정 $r-6Bi_2O_3{\cdot}SiO_2$(이하 BSO로 약칭)을 EFG(Edge-defined Film-fed Growth)법에 의하여 판상단결정으로 육성하는 기초적 조건을 조사하고 육성된 판단결정의 characterization 및 평가와 물성측정을 하였다. 본 연구에서 얻어진 최적성장조건은 온도구배가 $24^{\circ}C/cm$, 인상속도는 2.0mm/h이었다. 결정성장 최적조건에서 육성된 BSO결정은 제 2상의 석출이 없고 grain boundary가 존재하지 않으며 X선 분석으로도 단결정임이 확인되었다. 육성된 판상단결정의 판면은 (100)면이었고 결정성장 방위는 <100>이었다. 육성된 판상단결정은 편광현미경하에서는 pore, void, inclusion, striation 등의 성장결함이 없는 양질의 단결정이었으나 미세결함인 전위(dislocation)의 존재가 확인되었고 전위밀도는 $5.1{\times}10^5/\textrm{cm}^2$이었다.

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Structural properties of vacancy defects, dislocations, and edges in graphene

  • Lee, Gun-Do;Yoon, Eui-Joon;Hwang, Nong-Moon;Kim, Young-Kuk;Ihm, Ji-Soon;Wang, Cai-Zhuang;Ho, Kai-Ming
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.428-429
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    • 2011
  • Recently, we performed ab initio total energy calculation and tight-binding molecular dynamics (TBMD) simulation to study structures and the reconstruction of native defects in graphene. In the previous study, we predicted by TBMD simulation that a double vacancy in graphene is reconstructed into a 555-777 composed of triple pentagons and triple heptagons [1]. The structural change from pentagon-octagon-pentagon (5-8-5) to 555-777 has been confirmed by recent experiments [2,3] and the detail of the reconstruction process is carefully studied by ab initio calculation. Pentagon-heptagon (5-7) pairs are also found to play an important role in the reconstruction of vacancy in graphene and single wall carbon nanotube [4]. In the TBMD simulation of graphene nanoribbon (GNR), we found the evaporation of carbon atoms from both the zigzag and armchair edges is preceded by the formation of heptagon rings, which serve as a gateway for carbon atoms to escape. In the simulation for a GNR armchair-zigzag-armchair junction, carbon atoms are evaporated row-by-row from the outermost row of the zigzag edge [5], which is in excellent agreement with recent experiments [2, 6]. We also present the recent results on the formation and development of dislocation in graphene. It is found that the coalescence of 5-7 pairs with vacancy defects develops dislocation in graphene and induces the separation of two 5-7 pairs. Our TBMD simulations also show that adatoms are ejected and evaporated from graphene surface due to large strain around 5-7 pairs. It is observed that an adatom wanders on the graphene surface and helps non-hexagonal rings change into stable hexagonal rings before its evaporation.

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GaAs 웨이퍼의 대역단 영상에 대한 정량적 해석 (Quantitative Analysis on Near Band Edge Images in GaAs Wafer)

  • 강성준;나철훈
    • 한국정보통신학회논문지
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    • 제21권5호
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    • pp.861-868
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    • 2017
  • 도핑 되지 않은 반 절연 LEC GaAs내의 EL2와 얕은 준위 분포를 영상화하기 위해 대역단 적외선 영상 기법을 활용했다. 대역단 적외선 투사 매핑에 근거한 본 기법은 분석 속도가 빠르고 비파괴적인 방법이다. EL2 흡수 영상이 콘트라스트 반전되는 대역단 부근에 대한 정량적인 해석은 아직 보고되지 않고 있다. 본 논문은 대역단 부근에서 영상의 특정 부분(cell, wall)에 대한 포토퀀칭 메커니즘의 스펙트럼-, 공간- 및 온도- 종속성을 논하고 있다. 결함 부분별(EL2w, EL2b)로 포토퀀칭 개시점이 다른 것은 불순물 종류의 차이로 인한 서로 다른 전기적 작용에 기인한 것으로 해석할 수 있다. 전위(dislocation) 밀도가 높은 곳에서는 EL2b 밀도는 약간 적은 반면 EL2w 밀도는 보다 많다는 것을 정량적 해석으로부터 확인 했다.

EFG법에 의한 ${\gamma}-6Bi_2O_3{\cdot}GeO_2$ (Growth of ${\gamma}-6Bi_2O_3{\cdot}GeO_2$ Single Crystals by EFG Method)

  • 김호건;유건종
    • 한국결정성장학회지
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    • 제1권2호
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    • pp.34-45
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    • 1991
  • 광기능소자로 응용성이 넓은 전기광학결정 $r-6Bi_2O_3{\cdot}GeO_2$(이하 BGO로 약칭)을 EFG(Edge-defined Film-fed Growth)법에 의하여 판상단결정으로 육성하는 기초적 조건을 조사하였고 얻어진 판상단결정의 characterization 및 평가를 행하였다. 본 연구에서 얻어진 최적성장조건은 온도구배가 $22^{\circ}C$/cm 이었고 인상속도는 2.0mm/h이었다. 결정성장 최적조건에서 육성된 BGO결정은 제 2상의 석출이 없고 grain boundary가 존재하지 않으며 X선분석으로도 단결정임이 확인되었다. 육성된 판상단결정의 판면은 (100)면이었고 결정성장 방위는 <110>이었다. 육성된 판상단결정은 편광현미경하에서는 pore, void, inclusion, striation등의 성장결함이 없는 양질의 단결정이었으나 미세결함인 전위(dislocation)의 존재가 확인되었고 전위밀도는 $7.0{\times}105/cm^2$이었다.

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플랜트 엔지니어링을 위한 BCC-Fe 기반 저합금강의 기계적 및 열팽창 특성 합금 효과: Ab Initio 계산 (Alloying Effects of BCC-Fe Based Low-Alloy Steel on Mechanical and Thermal Expansion Properties for a Plant Engineering: Ab Initio Calculation)

  • 김명재;곽종욱;김지웅;김경남
    • 한국재료학회지
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    • 제33권10호
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    • pp.422-429
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    • 2023
  • High-strength low-alloy steel is one of the widely used materials in onshore and offshore plant engineering. We investigated the alloying effect of solute atoms in α-Fe based alloy using ab initio calculations. Empirical equations were used to establish the effect of alloying on the Vicker's hardness, screw energy coefficient, and edge dislocation energy coefficient of the steel. Screw and edge energy coefficients were improved by the addition of V and Cr solute atoms. In addition, the addition of trace quantities of V, Cr, and Mn enhanced abrasion resistance. Solute atoms and contents with excellent mechanical properties were selected and their thermal conductivity and thermal expansion behavior were investigated. The addition of Cr atom is expected to form alloys with low thermal conductivity and thermal expansion coefficient. This study provides a better understanding of the state-of-the-art research in low-alloy steel and can be used to guide researchers to explore and develop α-Fe based alloys with improved properties, that can be fabricated in smart and cost-effective manners.

고각 환형 암시야 주사투과전자현미경기법과 투과전자현미경기법을 이용한 상용 청색 발광다이오드의 종합적인 구조분석 (Comprehensive Structural Characterization of Commercial Blue Light Emitting Diode by Using High-Angle Annular Dark Filed Scanning Transmission Electron Microscopy and Transmission Electron Microscopy)

  • 김동엽;홍순구;정태훈;이상헌;백종협
    • 한국재료학회지
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    • 제25권1호
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    • pp.1-8
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    • 2015
  • This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.

Fabrication and characterization of ternary compound ZnCdS nanowires

  • Lee, Dong-Jin;Son, Moon-A;Kang, Tae-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.57-57
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    • 2010
  • Self assembled $Zn_{x-1}Cd_xS$ nanowires, synthesized on a Indium tin oxide coated glass substrate with low composition of Cd as x=0.09, were fabricated non-precursor via a co-evaporation method using of solid sources of CdS and ZnS. We studies that ZnCdS nanowires are dislocation-free and the single crystalline hexagonal wurtzite structure showed by transmission electron microscopy and selected area electron diffraction pattern. Cathode luminescence spectra showed an near band edge peak at 383nm originated from nanowires at 80K and 300K. Core level spectra of the Cd 3d, Zn 2p and S 2p in the ZnCdS nanorods were obtained by x-ray photoelectron spectroscopy. Prepared ZnCdS nanorods showed different shape with increase of substrate temperature at the growth.

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입계기공의 확산성장 모델을 이용한 고온기기의 크립균열전파해석(1)-응력장 및 균열전파속도에 미치는 입계기공의 영향- (Analysis of Creep Crack Growth at High-Temperature Components by Diffusive Growth Model of Grain Boundary Cavities (I)-Effect of Grain Boundary Cavitation on Stress Field and Crack Growth Rate-)

  • 전재영
    • 대한기계학회논문집A
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    • 제20권4호
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    • pp.1177-1185
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    • 1996
  • The crack growth under creep condition is one of the major damage mechanisms which determines remaining life of the component operating at high temperatures. In this paper, the creep crack growth by grain boundary cavitation is studied, which is frequently observed failure mechanism for creep brittle materials. As a result of diffusive growth of creep cavities, it is shown that the crack-tip stress field is modified from the original stress distribution by the amount of singularity attenuation parameter which is function of crack growth rate and material properties. Also, the stress relaxation at crack-tip results in the extension of cavitating area by the load dump effect to meet the macroscopic force equilibrium conditdion.

Stress Intensity Factors and Kink Angle of a Crack Interacting with a Circular Inclusion Under Remote Mechanical and Thermal Loadings

  • Lee, Saebom;Park, Seung-Tae;Earmme, Youn-Young;Chung, Dae-Youl
    • Journal of Mechanical Science and Technology
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    • 제17권8호
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    • pp.1120-1132
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    • 2003
  • A problem of a circular elastic inhomogeneity interacting with a crack under uniform loadings (mechanical tension and heat flux at infinity) is solved. The singular. integral equations for edge and temperature dislocation distribution functions are constructed and solved numeric-ally, to obtain the stress intensity factors. The effects of the material property ratio on the stress intensity factor (SIF) are investigated. The computed SIFs are used to predict the kink angle of the crack when the crack grows.