• ETRI Journal
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• v.24 no.5
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• pp.333-340
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• 2002

We propose a new process technique for fabricating very high-density trench MOSFETs using 3 mask layers with oxide spacers and a self-aligned technique. This technique reduces the device size in trench width, source, and p-body region with a resulting increase in cell density and current driving capability as well as cost-effective production capability. We were able to obtain a higher breakdown voltage with uniform oxide grown along the trench surface. The channel density of the trench DMOSFET with a cell pitch of 2.3-2.4 ${\mu}m$ was 100 Mcell/$in^2$ and a specific on-resistance of 0.41 $m{\Omega}{\cdot}cm^2$ was obtained under a blocking voltage of 43 V.

• ETRI Journal
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• v.31 no.1
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• pp.62-64
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• 2009

We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.669-670
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• 2006

This paper describes the functions and design technology of the T-DMB (Terrestrial Digital Multimedia Broadcasting) receiver. T-DMB is a novel broadcasting media that can provide high-quality video and audio services. In this paper, we will describe the VLSI implementation of RF, Baseband and Multimedia Chip for T-DMB Receiver. The designed DMB SoC has low power consumption and has been implemented using a standard-cell library in 0.18um CMOS technology.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.318-321
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• 2009

We have studied transparent top gate Al-Zn-Sn-O (AZTO) TFTs with an $Al_2O_3$ protective layer (PL) on an active layer. We also fabricated a transparent 2.5 inch QCIF+AMOLED display panel using the AZTO TFT back-plane. The AZTO active layers were deposited by RF magnetron sputtering at room temperature and the PL was deposited by ALD with two different processes. The mobility and subthreshold slope were superior in the cases of the vacuum annealing and the oxygen plasma PL compared to the $O_2$ annealing and the water vapor PL, however, the bias stability was excellent for the TFTs of the $O_2$ annealing and the water vapor PL.

• ETRI Journal
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• v.35 no.4
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• pp.559-565
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• 2013

In this work, we develop a simulation method to predict a two-dimensional luminance distribution method using a circuitry simulation. Based on the simulation results, we successfully fabricate large area ($90mm{\times}90mm$) transparent organic light-emitting diode panels with high luminance uniformity.

• Proceedings of the Korea Information Processing Society Conference
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• 2007.11a
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• pp.475-476
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• 2007

밀집리더 기능이 지원되는 RFID 리더 10 대를 대전우편집중국 발착장에 4 미터 간격으로 설치한 상태에서 우편용 파렛을 1.2m/s 의 속도로 이동시키며 인식실험 한 결과 만족할 만한 리더 인식률을 확인할 수 있었다. 이 인식실험 결과를 물류관리에 적용할 수 있을 것으로 생각되며, 이를 위해 물류가 이동되는 장소의 차량 발착장에 설치하여 운용할 경우 소기의 목적을 달성할 수 있을 것이다.

• Proceedings of the Korea Information Processing Society Conference
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• 2007.11a
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• pp.1021-1024
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• 2007

인터넷이 발달하고 VoIP 의 활성화로 인하여 사용자들은 인터넷 전화서비스의 통화품질에 대한 관심이 크게 증가하고 있다. 본 고에서는 인터넷 전화서비스의 단말에 사용하고 있는 음성 코덱의 품질 측정을 위해 IP 패킷 전송품질 파라미터(ITU-T Y.1540)들을 인가하면서 이들 파라미터들의 변화에 따른 E-Model(ITU-T G.107) 종합 음성품질(R 값)을 측정하여 인터넷전화 단말의 프로세싱 품질을 파악하고 종단간서비스에서 단말이 차지하는 부분을 분석하여 인터넷 전화서비스의 통화품질 개선 및 향후 단말의 인증기준 등에 활용하고자 한다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.393-395
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• 2009

We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.

• ETRI Journal
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• v.37 no.5
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• pp.833-844
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• 2015

Recently, new network systems have begun to emerge (for instance, 5G, IoT, and ICN) that require capabilities beyond that provided by existing IP networking. To fulfill the requirements, some new networking technologies are being proposed. The promising approach of the new networking technology is to try to overcome the architectural limitations of IP networking by adopting an identifier (ID)-based networking concept in which communication objects are identified independently from a specific location and mechanism. However, we note that existing ID-based networking proposals only partially meet the requirements of emerging and future networks. This paper proposes a new ID-based networking architecture and mechanisms, named IDNet, to meet all of the requirements of emerging and future networks. IDNet is designed with four major functional blocks-routing, forwarding, mapping system, and application interface. For the proof of concept, we develop numeric models for IDNet and implement a prototype of IDNet.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1990.06a
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• pp.158-161
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• 1990