• Transactions of the Korean Society of Automotive Engineers
• /
• v.21 no.2
• /
• pp.159-165
• /
• 2013

ESD damage by Charged Cable Model (CCM) is introduced. Due to its own impedance characteristic unlike Human Body Model (HBM) or Machine Model (MM) electric component can be destroyed even though it is located after typical protection circuit. Possible mechanism of ESD damage to automotive electric control unit (ECU) in vehicle environment by CCM discharge was investigated. Based on investigation, field-returned vehicle whose ECU is expected to be damaged by CCM discharge was tested to reproduce it and similar electric component destruction inside ECU was observed. Suggestions to reduce the possibility of ESD damage by CCM are introduced.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.7
• /
• pp.1429-1435
• /
• 2004

In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.2
• /
• pp.292-300
• /
• 2015

This paper proposes a high-efficiency, dual-mode PWM / linear buck converter with a wide-input range. The proposed converter was designed with a mode selector that can change the operation between PWM / linear mode by sensing a load current. The proposed converter operates in a linear mode during a light load and in PWM mode during a heavy load condition in order to ensure high efficiency. In addition, the mode selector uses a bit counter and a transmission gate designed to protect from a malfunction due to noise or a time-delay. Also, in conditions between $-40^{\circ}C$ and $140^{\circ}C$, the converter has variations in temperature of $0.5mV/^{\circ}C$ in the PWM mode and of $0.24mV/^{\circ}C$ in the linear mode. Also, to prevent malfunction and breakdown of the IC due to static electricity, the reliability of IC was improved by embedding a self-produced 8 kV-class(Chip level) ESD protection circuit of a P-substrate Triggered SCR type with high robustness characteristics.

• Journal of IKEEE
• /
• v.22 no.4
• /
• pp.1202-1205
• /
• 2018

In this paper, we proposed ggNMOS based on 4H-SiC material and analyzed its electrical characteristics. 4H-SiC is a wide band-gap meterial, which is superior in area contrast and high voltage characteristics to Si material, and is attracting attention in the power semiconductor field. The proposed device has high robustness and strong snapback characteristics. The process consisted of SiC process and electrical characteristics were analyzed by TLP measurement equipment.

• Journal of IKEEE
• /
• v.11 no.1 s.20
• /
• pp.69-76
• /
• 2007

This paper presents the design of LVDS (Low-Voltage-Differential-Signaling) transmitter for Gb/s-per-pin operation. The proposed LVDS transmitter is designed using BiCMOS technology, which can be compatible with CMOS technology. To reduce chip area and enhance the robustness of LVDS transmitter, the MOS switches of transmitter are replaced with lateral bipolar transistor. The common emitter current gain($\beta$) of designed bipolar transistor is 20 and the cell size of LVDS transmitter is $0.01mm^2$. Also the proposed LVDS driver is operated at 1.8V and the maximum data rate is 2.8Gb/s approximately In addition, a novel ESD protection circuit is designed to protect the ESD phenomenon. This structure has low latch-up phenomenon by using turn on/off character of P-channel MOSFET and low triggering voltage by N-channel MOSFET in the SCR structure. The triggering voltage and holding voltage are simulated to 2.2V, 1.1V respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.43 no.11 s.353
• /
• pp.175-184
• /
• 2006

In this paper, we describe a 900MHz CMOS RF transceiver using an ISM band for ZigBee applications. The architecture of the designed rx front-end, which consists of a low noise amplifier, a down-mixer, a programmable gain amplifier and a band pass filter. And the tx front-end, which consists of a band pass filter, a programmable gain amplifier, an up-mixer and a drive amplifier. A low-if topology is adapted for transceiver architecture, and the total current consumption is reduced by using a low power topology. Entire transceiver is verified by means of post-layout simulation and is implemented in 0.18um RF CMOS technology. The fabricated chip demonstrate the measured results of -92dBm minimum rx input level and 0dBm maximum tx output level. Entire power consumption is 32mW(@1.8VDD). Die area is $2.3mm{\times}2.5mm$ including ESD protection diode pads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.16 no.1 s.92
• /
• pp.102-112
• /
• 2005

In this work, we developed fully integrated broadband MMIC chip set employing CSP(Chip Size Package) for K/Ka band applications. By utilizing an ACF for the RF-CSP, the fabrication process for the packaged amplifier MMIC could be simplified and made cost effective. $STO(SrTi_{3})$ capacitors were employed to integrate the DC biasing components on the MMIC, and LC parallel circuits were employed for DC feed and ESD protection. A pre-matching technique and RC parallel circuit were used to achieve a broadband matching and good stability fer the amplifier MMIC in K/Ka band. The amplifier CSP MMIC exhibited good RF performance over a wide frequency range in K/Ka band. This work is the first report of a fully integrated CSP amplifier MMIC successfully operating in the K/Ka band.

• Journal of the Korean Society of Safety
• /
• v.35 no.1
• /
• pp.1-11
• /
• 2020

Article 325 (Prevention of Fire Explosion due to Electrostatic) of the Rule for Occupational Safety and Health Standard specifies that in order to prevent the risk of disasters caused by static electricity, fire, explosion and static electricity in the production process, However, in order to do this, it is absolutely necessary to use a pre-detection technology and a detector for antistatic discharge prediction, which is a precautionary measure by static electricity in a fire / explosion hazard place, but in Korea, And there is no technical standard for the application of the technology of the explosion proof structure of the related equipment. Research methods include domestic and overseas electrostatic discharge detection technology and literature investigation of related equipment explosion proofing technology, domestic and foreign electrostatic discharge detection device production and use situation investigation, advanced foreign technology data analysis and benchmarking. In particular, we sought to verify the results of empirical experiments using electrostatic discharge detection technology through sample purchase and analysis of related major products, development of optimization technology through prototype production, evaluation, and supplementation, and expert knowledge through expert consultation. The results of this study were developed and fabricated two prototypes of electrostatic discharge detector based on the technology / standard related to electrostatic discharge detection technology in Korea and abroad through development of electrostatic discharge detection technology and development and production of detector. In addition, based on the development of electrostatic discharge detection technology, we developed an intrinsic safety explosion proof ib class explosion proof technology applicable to the process of using and handling flammable gas and flammable liquid vapor and combustible dust. In the case of the over voltage and minimum voltage are supplied to the explosion-proof structure ESD detector, check the state of the circuit and the transient and transient currents generated by the coil and capacitor elements during the input and standby of the signal pulse voltage. Explosion-proof equipment-Part 11: Intrinsically safe explosion proof structure The comparative evaluation with the reference curve in Annex A of "i" confirms that the characteristics of the intrinsically safe explosion protection structure are met.