• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.134-142
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• 1996

The epi-CoSi$_{2}$ layer was formed by alloying a Co(120$\AA$)/Ti(50$\AA$) bilayer. In addition, the ultra shallow p$^{+}$n junction of which depth is about not more than 40nm at the background concentration, 10$^{18}$atoms/cm$^{3}$ could be formed by annealing (RTA-II) the ion implanted epi-silicide. When the temperature of RTA-I is as low as possible and that of RTA-II is moderate, the p$^{+}$n junction that has low leakage current and stable epi-silicide layer could be obtained. That is, when th econdition of TRA-I was 900$^{\circ}C$/20sec and that of RTA-II was 900$^{\circ}C$/10sec, the reverse leakage current was as high as 11.3$\mu$A/cm$^{2}$ at -5V. The surface of CoSi$_{2}$ appeared considerably rough. However, when the conditon of RTA-I was 800$^{\circ}C$/20sec or 700$^{\circ}C$/20sec, the leakage currents were as low as 8.3nA/cm$^{2}$ and 9.3nA/cm$^{2}$, respectively and also the surfaces appeared very uniform.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.350-350
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• 2010

Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from $6\;{\mu}m$ to $10\;{\mu}m$) and the channel width (from $0.9\;{\mu}m$ to $1.2\;{\mu}m$), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.274-283
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• 2014

In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved $f_tBV_{CEO}$ product (397 GHzV). As the $BV_{CEO}$ value is higher for low value of epi layer doping, higher supply voltage can be used to increase the $f_t$ value of the HBT. At 1.8 V $V_{CE}$, the $f_tBV_{CEO}$ product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV $f_tBV_{CEO}$ product at 1.2 V $V_{CE}$). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

• Biotechnology and Bioprocess Engineering:BBE
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• v.6 no.1
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• pp.51-55
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• 2001

This study was conducted to establish a plant cell culture system for the production of medically important secondary metabolites from Xanthium strumarium. The effects of plant growth regulators including NAA, 2,4-D, kinetin, and ABA were examined in terms of callus induction, maintenance of callus and suspension cultures. It was shown that callus was induced upon treatment with NAA while embryo was induced after treatment with 2,4-D. Callus formation was further improved by treatment with ABA and NAA. The level of callusing increased by 17-29% for the seed case, cotyledon, leaf, and hypocotyl and by 96% in the case of the root. Suspension cell lines were established using calli produced from cotyledon, hypocotyl and root and cultured at 25$\^{C}$ under light conditions. The cells grew up to 15g/L with NAA 2ppm, BA 2ppm, and ABA 1ppm treatment. Supernatants of suspension cultures of cell lines derived from coyledon and hypocotyl produced some distinctive secondary metabolites, one of which was identified as 8-epi-tomentosin, which belongs to the xanthanolides. The amounts of 8-epi-tomentosin produced by the cotyledon- and hypocotylderived cell lines were 13.4mg/L and 11.0mg/L, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.311-316
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• 2001

The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. At devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane, and also newEPI MOSFET for improved structure to weak point of LDD structure by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impart ionization, electric field and I-V curve with those of lightly-doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.288-291
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• 2004

Due to the charge compensation effect, SOI(Silicon-On-Insulator) LIGBT with dual-epi layer have been found to exhibit both low forward voltage drop and high static breakdown voltage. In this paper, electrical characteristics of the SOI LIGBT with dual-epi structure is presented. Trenched anode structure is employed to obtain uniform current flowlines and shorted anode structure also employed to prevent the fast latch-up. Latching current density of the proposed LIGBT with $T_1=T_2=2.5{\mu}m,\;N_1=7{\times}10^{15}/cm^3,\;N_2=3{\times}10^{15}/cm^3$ is $800A/cm^2$ and breakdown voltage is 125V while latching current density and breakdown voltage of the conventional LIGBT is $700A/cm^2$ and 55V.

• Korean Journal of Plant Tissue Culture
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• v.25 no.3
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• pp.141-146
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• 1998

Feeding experiment of [$^3$H] 5-epi-aristolochene (5-EAS) demonstrated in suspension cultures of tobacco (Nicotiana tabacum L.) that 5-EAS hydroxylase activity was absent from control cells, but induced to a maximum level within 18 h after the addition of cellulase, and was very similar to induction pattern of sesquiterpene cyclase. This result suggest that the conversion of 5-EAS to capsidiol is catalyzed by at least one elicitor-inducible hydroxylase. Cytochrome P450 inhibitors, ancymidol and ketoconazole, suppressed the elicitor-induced capsidiol accumulation by inhibiting hydroxylase activity, suggesting that the hydroxylase may be a Cyt P450 type enzyme.

• Korean Journal of Optics and Photonics
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• v.22 no.3
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• pp.141-150
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• 2011

Although significant amount of research has been done to develop LED lamp packages for improved performance, no standard theories or guidelines have been established yet for designing LED lamp packages. In this paper, the photon extraction efficiency depending on both the InGaN/Sapphire LED chip structure and its attachment schemes for chip mounting has been analyzed by using the Monte Carlo photon simulation method. Based on the results of the analysis, we have derived guidelines for LED lamp package design, which can be utilized in industries or research institutes for designing new LED lamp packages optimized for particular applications.

• Biomolecules & Therapeutics
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• v.29 no.3
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• pp.290-294
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• 2021

Extracellular beta amyloid (Aβ) plaques are the neuropathological hallmarks of Alzheimer's disease (AD). Accordingly, reducing Aβ levels is considered a promising strategy for AD prevention. 3'-O-acetyl-24-epi-7,8-didehydrocimigenol-3-O-β-D-xylopryranoside significantly decreased the Aβ production and this effect was accompanied with reduced sAPPβ production known as a soluble ectodomain APP fragment through β-secretases in HeLa cells overexpressing amyloid precursor proteins (APPs). This compound also increased the level of sAPPα, which is a proteolytic fragment of APP by α-secretases. In addition, 3'-O-acetyl-24-epi-7,8-didehydrocimigenol-3-O-β-D-xylopryranoside decreased the protein level of β-secretases, but the protein levels of A disintegrin and metalloproteinase (ADAM) family, especially ADAM10 and ADAM17, are increased. Thus, 3'-O-acetyl-24-epi-7,8-didehydrocimigenol-3-O-β-D-xylopryranoside could be useful in the development of AD treatment in the aspect of amyloid pathology.