• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.218-224
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• 1990

Silicon nitride thin(SiNx) is deposited onto 3 inch silicon wafor using ECR plasma apparatus. For the two different plasma extraction windows size, the thin films which were deposited by changing the SiH4/N2 gas fole at at 1.5mTorr without substrate heating are analyzed through the XPS and wlliposometer measurements. The very uniform and good quality silicon nitride thin film were obtained with the analyzed results of the deposited films, and particularly, ion temperature perpendicular to the magnetic filed was nearly same as the neutral gas temperature. The large amount of plasma loss in the transport process following magnetic field lines could be seen from the plasma emission intensity measurements.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.68-74
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• 1998

Improved performance and suppressed short-channel effects of polysilicon thin film transistors (poly-Si TFTs) with very thin electron cyclotron resonance (ECR) $N_2$O-plasma gate oxide have been investigated. Poly-Si TFTs with ECR $N_2$O-plasma oxide ($N_2$O-TFTs) show better performance as well as suppressed short-channel effects than those with conventional thermal oxide. The fabricated $N_2$O-TFTs do not show threshold voltage reduction until the gate length is reduced to 3 ${\mu}{\textrm}{m}$ for n-channel and 1 ${\mu}{\textrm}{m}$ for p-channel, respectively. The improvements are due to the smooth interface, passivation effects, and strong Si ≡ N bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.22-22
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• 1995

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.11a
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• pp.31-34
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.60-60
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• 1996

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.186-196
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• 2009

Since it is difficult to extract a high flux ion beam directly at an energy of hyperthermal range ($1{\sim}100\;eV$), especially, lower than 50 eV, the ions should be neutralized into neutral particles and extracted as a neutral beam. A plasma source required to generate and efficiently transport high flux hyperthermal neutral beams should be easily scaled up and produce a high ion density (${\ge}10^{11}\;cm^{-3}$) even at a low working pressure (${\le}$ 0.3 mTorr). It is suggested that the required plasma source can be realized by Electron Cyclotron Resonance (ECR) plasmas with diverse magnetic field configurations of permanent magnets such as a planar ECR plasma source with magnetron field configuration and cylindrical one with axial magnetic fields produced by permanent magnet arrays around chamber wall. In both case of the ECR sources, the electron confinement is based on the simple mirror field structure and efficiently enhanced by electron drifts for producing the high density plasma even at the low pressure.

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.30-30
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• 1995

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.143-143
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• 2001

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.851-855
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• 1997

본 실험에서는 저유전율 층간절연물질로서 SiOF박막을 ECR plasma CVD를 이용하여 증착하였다. 또한 증착시에 발생시킨 플라즈마의 특성 분석을 위하여 Langmuir probe를 반응챔버에 부착하여 플라즈마 밀도, 마이크로파 전력은 700W, 기판온도는 30$0^{\circ}C$에서 행하였다. 증착된 SiOF 박막을 분석한 결과, 가스유량비(SiF$_{4}$/O$_{2}$)가 0.2에서 1.6으로 증가하였을 때 불소의 함량은 약 5.3at%에서 14.5at%로 증가하였으며, 굴절률은 1.501에서 1.391로 감소하였고 이는 불소 첨가에 의한 박막의 밀도감소에 의한 것으로 생각된다. 또한 박막의 유전상수는 가스유량비가 1.0(11.8qt.% F함유)일 때 3.14였다.