• Biomedical Science Letters
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• v.12 no.4
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• pp.413-418
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• 2006

Charcot-Marie-Tooth disease (CMT) is blown as one of the inherited disorder of peripheral nervous system. Recently, it was found that point mutations in the neurofilament light subunit (NF-L) gene cause CMT. Neurofilaments (NFs) are heteropolymers consist of NF-L, NF-M and NF-H. To assess the relationship between CMT and NF-L mutation in cellular level, we performed phenotypic analysis of the mutant NF-L (E397K) using cultured cell lines. Vimentin-deficient human adrenal carcinoma SW13 (Vim-) cells have a potential to form the intermediate filaments when the cells are expressing both NF-L and NF-M. Our results show that co-expression of wild type NF-L with NF-M showed intermediate filament formation in SW13 (Vim-) cells, while E397K with NF-M did not. This result means that E397K mutant lost its ability to form the intermediate filament in vivo, and further suggests that the E397K mutation is closely related to CMT.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.397-399
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• 2003

• Journal of applied mathematics & informatics
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• v.36 no.5_6
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• pp.397-409
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• 2018

The aim of this research note is to evaluate two generalized integrals involving the product of generalized Bessel function and Jacobi polynomial by employing the result of Obhettinger [2]. Also, by mean of the main results, we have established an interesting relation in between $Kamp{\acute{e}}$ de $F{\acute{e}}riet$ and Srivastava and Daoust functions. Some interesting special cases of our main results are also indicated.

• Honam Mathematical Journal
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• v.27 no.3
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• pp.389-397
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• 2005

Let K be an absolutely real abelian number field with $G=Gal(K/{\mathbb{Q}})$. Let E be a subfield of K and ${\Delta}=Gal(K/E)$. Let $C_K$ and $C_E$ be the group of circular units of K and E respectively. In [G], Greither has shown that if G is cyclic then $C_K^{\Delta}=C_E$. In this paper we show that the same result holds in function field case.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2019.05a
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• pp.397-398
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• 2019

• Proceedings of the Korean Society of Computer Information Conference
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• 2010.07a
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• pp.397-398
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• 2010

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.130-135
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• 2000

We have analyzed characteristics for the structure of $Al_{0.25}/Ga_{0.75}/As/In_{0.15}/Ga_{0.85}$/AS/GaAS pseudomorphic high electron mobility transistor (PHEMT) by photoluminescence (PL) and photoreflectance (PR) measurements. By the PL measurement at 10 K, we observed el-hl transition peak at 1.322 eV and e2-hl transition peak at 1.397 eV in the InGaAs quantum well. We calculated value of 23 meV, the difference between the first energy level and the second energy level of a valence band by dependence of temperatures. Also, (e2-h2) transition signal was observed at 300 K by PR measurement. From the PR measurement, we recognized that the transition was dominated the second energy level of conduction band than the first energy level of conduction band due to band filling. The other hand, PL signal of the first energy level of conduction band was dominated because of the electron screening effect.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.397-405
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• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.397-398
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• 2012

• Bulletin of the Korean Mathematical Society
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• v.48 no.2
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• pp.397-412
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• 2011

In this paper, the equation of the transient Stokes flow of an incompressible viscous fluid is studied. Growth and decay estimates are established associating some appropriate cross sectional line and area integral measures. The method of the proof is based on a first-order differential inequality leading to an alternative of Phragm$\'{e}$n-Lindell$\"{o} $f type in terms of an area measure of the amplitude in question. In the case of decay, we also indicate how to bound the total energy.