• Title/Summary/Keyword: E-J power

Search Result 823, Processing Time 0.032 seconds

The development of microprocessor_based controller for the electrical boiler of heat storage type (축열식 전기보일러용 마이크로프로세서 제어장치개발)

  • Kim, J.S.;Park, J.W.;Joe, K.Y.;Kim, Y.H.
    • Proceedings of the KIEE Conference
    • /
    • 1989.11a
    • /
    • pp.250-253
    • /
    • 1989

  • As the necessity of increasing the midnight base load is extensively increased, electric power companies have to increase the demand of midnight electrical power by lowering the electrical charge rate at midnight. One of the most widely used midnight equipments is the heat Storage type's electrical boiler. A Single chip microprocessor controller for the heat-storage type's electrical boiler is developed. This controller call reduce the undesirable peak load at the begining of midnight (i.e.11 P.M.) time band by using backward load control method. Futhermore, this controller enables reservation of heat storge and the effective heating control the field test has been done by use the boiler for 66$m^2$ with the heater of 21KW quality.

  • PDF

Application Study of Condition Monitoring Technology for Emergency Diesel Generator at Nuclear Power Plant (원자력발전소 비상디젤발전기 상태감시 기술 적용 연구)

  • Choi, K.H.;Park, J.H.;Park, J.E.;Lee, S.G.
    • Journal of Power System Engineering
    • /
    • v.13 no.1
    • /
    • pp.53-58
    • /
    • 2009

  • The emergency diesel generator(EDG) of the nuclear power plant is designed to supply the power to the nuclear reactor on Station Black Out(SBO) condition. The operation reliability of onsite emergency diesel generator should be ensured by a conditioning monitoring system designed to monitor and analysis the condition of diesel generator. For this purpose, we have developing the technologies of condition monitoring for the wolsong unit 3&4 standby diesel generator including diesel engine performance. In this paper, technologies of condition monitoring for the wolsong standby diesel generator are described about three step. First is for selection of operating parameter for monitoring. Second is for technologies of online condition monitoring, Third is for monitoring of engine performance.

  • PDF

Growth and Characterization of a-Si :H and a-SiC:H Thin Films Grown by RF-PECVD

  • Kim, Y.T.;Suh, S.J.;Yoon, D.H.;Park, M.G.;Choi, W.S.;Kim, M.C.;Boo, J.-H.;Hong, B.;Jang, G.E.;Oh, M.H.
    • Journal of the Korean institute of surface engineering
    • /
    • v.34 no.5
    • /
    • pp.503-509
    • /
    • 2001

  • Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

  • PDF

POWER GTO WITH COMPENSATED RING ANODE-SHORT

  • Zhang Changli;Chen Zhiming;Kim, S.C.;Min, W.G.;Park, J.M.;Kim, N.K.;Kim, E.D.
    • Proceedings of the KIPE Conference
    • /
    • 1998.10a
    • /
    • pp.241-245
    • /
    • 1998

  • This paper gives the novel design of compensated ring anode-short for power GTO thyristor. By means of this design the power GTO of $\Phi$63.5mm 2500A/4500V reaches more uniform turn-off compared with conventional ring short GTO, resulting in higher turn-off ability and low tail current/tail time.

  • PDF