• Structural Engineering and Mechanics
• /
• 제72권6호
• /
• pp.785-796
• /
• 2019

Power transmission substations are susceptible to potential damage under seismic excitations. Two of the major seismic failure modes in substation supplies are: the breakage of brittle insulator, and conductor end fittings. This paper presents efficient isolation strategies for seismically strengthening of a two-item set of equipment including capacitive voltage transformer (CVT) adjacent to a Lightning Arrester (LA). Two different strategies are proposed, Case A: implementation of base isolation at the base of the CVT, while the LA is kept fixed-base, and Case B: implementation of base isolation at the base of the LA, while the CVT is kept fixed-base. Both CVT and LA are connected to each other using a cable during the dynamic excitation. The probabilistic seismic behavior is measured by Incremental Dynamic Analysis (IDA), and a series of appropriate damage states are proposed. Finally, the fragility curves are derived for both the systems. It is found that Friction Pendulum System (FPS) isolator has the potential of decreasing flexural stresses caused by intense ground motions. The research has shown that when the FPS is placed under LA, i.e. Case B (as oppose to Case A), the efficiency of the system is improved in terms of reducing the forces and stresses at the bottom of the porcelain. Several parametric studies are also performed to determine the optimum physical properties of the FPS.

• Transactions on Electrical and Electronic Materials
• /
• 제16권2호
• /
• pp.82-85
• /
• 2015

Mechanical and electrical properties of epoxy/silica microcomposites were investigated. The cycloaliphatic- type epoxy resin was diglycidyl 1,2-cyclohexanedicarboxylate and the curing agent was of an anhydride type. To measure the glass transition temperature (Tg), dynamic differential scanning calorimetry (DSC) analysis was carried out, and tensile and flexural tests were performed using a universal testing machine (UTM). Electrical breakdown strength, the most important property for electrical insulation materials, and insulation breakdown strength were also tested. The microcomposite with 60 wt% microsilica showed maximum values in mechanical and electrical properties.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.35-35
• /
• 2009

Capacitorless one transistor dynamic random access memory (1T-DRAM) cells were fabricated on the fully depleted strained-silicon-on-insulator (FD sSOI) and the effects of silicon back interface state on buried oxide (BOX) layer on the memory properties were evaluated. As a result, the fabricated 1T-DRAM cells showed superior electrical characteristics and a large sensing current margin (${\Delta}I_s$) between "1" state and "0" state. The back interface of SOI based capacitorless 1T-DRAM memory cell plays an important role on the memory performance. As the back interface properties were degraded by increase rapid thermal annealing (RTA) process, the performance of 1T-DRAM was also degraded. On the other hand, the properties of back interface and the performance of 1T-DRAM were considerably improved by post RTA annealing process at $450^{\circ}C$ for 30 min in a 2% $H_2/N_2$ ambient.

• 공업화학
• /
• 제26권1호
• /
• pp.116-119
• /
• 2015

전계 효과 트랜지스터(FET) 기반의 이온 또는 바이오센서에 대한 연구는 지금까지 활발하게 이루어지고 있다. 본 논문에서는 여러 가지 측정 방법 중에 FET 게이트 절연체 위의 감지막과 이온 또는 생분자의 상호작용으로 전하 분포의 변화가 일어나면 이로 인해 드레인 전류의 변화를 측정하는 방법을 기반으로, 동일한 입력 신호, 즉 동일한 이온 또는 생분자의 농도에 대해 최적의 출력 신호를 얻기 위한 방법에 대해 논의한다. 대표적인 FET 센서는 이온 감지 FET (ISFET)로 본 논문에서는 pH를 측정하는 센서를 이용하였다. ISFET는 게이트 전압 대신 기준전극 전압을 가하는데 이 기준전극 전압과 드레인 전류의 관계식을 측정하여, 가장 기울기가 큰 곳을 찾아 이를 기준으로 동작범위에서의 입력 변화에 대해 출력 신호인 포화영역에서 드레인 전류의 변화가 큰 조건을 설정해 보았다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제53권3호
• /
• pp.128-132
• /
• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• 한국전기전자재료학회논문지
• /
• 제19권1호
• /
• pp.18-22
• /
• 2006

Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.149-149
• /
• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• Wind and Structures
• /
• 제22권3호
• /
• pp.369-391
• /
• 2016

Electricity is transmitted by transmission lines from the source of production to the distribution system and then to the end users. Failure of a transmission line can lead to devastating economic losses and to negative social consequences resulting from the interruption of electricity. A comprehensive in-house numerical model that combines the data of computational fluid dynamic simulations of tornado wind fields with three dimensional nonlinear structural analysis modelling of the transmission lines (conductors and ground-wire) is used in the current study. Many codes of practice recommend neglecting the tornado forces acting on the conductors and ground-wires because of the complexity in predicting the conductors' response to such loads. As such, real transmission line systems are numerically simulated and then analyzed with and without the inclusion of the lines to assess the effect of tornado loads acting on conductors on the overall response of transmission towers. In addition, the behaviour of the conductors under the most critical tornado configuration is described. The sensitivity of the lines' behaviour to the magnitude of tornado loading, the level of initial sag, the insulator's length, and lines self-weight is investigated. Based on the current study results, a recommendation is made to consider conductors and ground-wires in the analysis and design of transmission towers under the effect of tornado wind loads.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.201-201
• /
• 2010

DRAM (dynamic random access memory)은 하나의 트랜지스터와 하나의 캐패시터의 구조 (1T/1C)를 가지는 구조로써 빠른 동작 속도와 고집적에 용이하다. 하지만 고집적화를 위해서는 최소한의 캐패시터 용량 (30 fF/cell)을 충족시켜 주어야 한다. 이에 따라 캐패시터는 stack 혹은 deep trench 구조로 제작되어야 한다. 위와 같은 구조로 소자를 구현할 시 제작공정이 복잡해지고 캐패시터의 집적화에도 한계가 있다. 이러한 문제점을 보완하기 위해 1T-DRAM이 제안되었다. 1T-DRAM은 하나의 트랜지스터로 이루어져 있으며 SOI (silicon-on-insulator) 기판에서 나타나는 floating body effect를 이용하여 추가적인 캐패시터를 필요로 하지 않는다. 하지만 SOI 기판을 이용한 1T-DRAM은 비용측면에서 대량생산화를 시키기는데 어려움이 있으며, 3차원 적층구조로의 적용이 어렵다. 하지만 다결정 실리콘을 이용한 기판은 공정의 대면적화가 가능하고 비용적 측면에서 유리한 장점을 가지고 있으며, 적층구조로의 적용 또한 용이하다. 본 연구에서는 ELA (eximer laser annealing) 방법을 이용하여 비정질 실리콘을 결정화시킨 기판에서 1T-DRAM을 제작하였다. 하지만 다결정 실리콘은 단결정 실리콘에 비해 저항이 크기 때문에, 메모리 소자로서 동작하기 위해서는 높은 바이어스 조건이 필요하다. 게이트 산화막이 얇은 경우, 게이트 산화막의 열화로 인하여 소자의 오작동이 일어나게 되고 게이트 산화막이 두꺼울 경우에는 전력소모가 커지게 된다. 그러므로 메모리 소자로서 동작 할 수 있는 최적화된 게이트 산화막 두께가 필요하다. 제작된 소자는 KrF-248 nm 레이저로 결정화된 ELA 기판위에 게이트 산화막을 10 nm, 20 nm, 30 nm 로 나누어서 증착하여, 전기적 특성 및 메모리 특성을 평가하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.456-459
• /
• 2003

Polychloroprene(CR) is well known as elastomer commonly utilized in the electrical. It is mainly used for cable jacket and insulator. The irradiation degradation property of polymer materials is very important to prevent unexpected accidents in the Nuclear Power Plant(NPP). The irradiation degradation is caused by the oxidation of polymer materials, and this oxidation is occurred by oxygen radical produced from air. In this study, we evaluate the oxidation properties of CR. CR is irradiated for 200, 400, 600, 1000 kGy radiation dose. The oxidation properties of irradiated CR are investigated by differential scanning calorimetry, dynamic mechanical properties and FT-IR/ATR. Glass transition temperature(Tg), decomposition onset temperature(DOT), loss modulus and mechanical tan $\delta$ values are compared together. The irradiation limit of CR in the NPP, is known for 500 kGy, and this is exactly matched with investigated results.