• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
• /
• v.5 no.1
• /
• pp.53-64
• /
• 2007

The dynamic release behavior of Cs from high burn-up spent PWR fuel was experimentally performed under the conditions of a thermal treatment process such as voloxidation and sintering conditions. In voloxidation process, influence of the oxidation and reduction atmosphere on the Cs release characteristic using fragment type of spent fuel heated up to $1,500^{\circ}C$ was compared. In sintering process, temperature history effect on Cs release behavior was evaluated using green pellet under 4% $H_2/Ar$ environment. Temperature range for complete Cs release from spent fuel fragment under voloxidation condition was about $800^{\circ}C{\sim}1,200^{\circ}C$, but that of green pellet under the reduction atmosphere was $1,100^{\circ}C{\sim}1,400^{\circ}C$. Key parameters on Cs release behavior from spent fuel was powder formation as well as the diffusion rate of Cs compound to grain boundary and fuel surface.

• Journal of Broadcast Engineering
• /
• v.24 no.5
• /
• pp.849-858
• /
• 2019

Recent developments in computer graphics technology and image processing technology have increased interest in point cloud technology for inputting real space and object information as three-dimensional data. In particular, point cloud technology can accurately provide spatial information, and has attracted a great deal of interest in the field of autonomous vehicles and AR (Augmented Reality)/VR (Virtual Reality). However, in order to provide users with 3D point cloud contents that require more data than conventional 2D images, various technology developments are required. In order to solve these problems, an international standardization organization, MPEG(Moving Picture Experts Group), is in the process of discussing efficient compression and transmission schemes. In this paper, we provide a region division transfer method of 3D point cloud content through extension of existing MPEG-DASH (Dynamic Adaptive Streaming over HTTP)-SRD (Spatial Relationship Description) technology, quality parameters are further defined in the signaling message so that the quality parameters can be selectively determined according to the user's request. We also design a verification platform for ROUTE (Real Time Object Delivery Over Unidirectional Transport)/DASH based heterogeneous network environment and use the results to validate the proposed technology.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.32 no.4
• /
• pp.661-671
• /
• 2022

Due to the COVID-19 pandemic, remote working, e-learning, e-teaching and online collaboration have widely spread and become popular. Accordingly, the usage of IPsec VPN for security reasons has also dramatically increased. With the spread of VPN, VPN vulunerabilities are becoming an important target of attack for attackers, and many studies have been conducted on this. IKE v2 analysis is an essential process not only for developing and building IPsec VPN systems but also for security analysis. Network packet analysis tools such as Wireshark and Tcpdump are used for IKE v2 analysis. Wireshark is one of the most famous and widely-used network protocol analyzers and supports IKE v2 analysis. However Wireshark has many limitations, such as requiring system administrator privileges for IKE v2 analysis. In this paper, we describe Wireshark's limitations in detatil and propose a new analysis method. The proposed analysis method can analyze all encrypted IKE v2 messages in real time from the session key exchange In addition, the proposed analysis method is expected to be used for dynamic testing such as fuzzing as packet manipulation.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.55 no.4
• /
• pp.275-283
• /
• 2010

This experiment was conducted to construct process models to estimate grain weight (GW) and grain nitrogen content (GN) in rice. A model was developed to describe the dynamic pattern of GW and GN during grain-filling period considering their relationships with temperature, solar radiation and growth traits such as LAI, shoot dry-weight, shoot nitrogen content, grain number during grain filling. Firstly, maximum grain weight (GWmax) and maximum grain nitrogen content (GNmax) equation was formulated in relation to Accumulated effective temperature (AET) ${\times}$ Accumulated radiation (AR) using boundary line analysis. Secondly, GW and GN equation were created by relating the difference between GW and GWmax and the difference between GN and GNmax, respectively, with growth traits. Considering the statistics such as coefficient of determination and relative root mean square of error and number of predictor variables, appropriate models for GW and GN were selected. Model for GW includes GWmax determined by AET ${\times}$ AR, shoot dry weight and grain number per unit land area as predictor variables while model for GN includes GNmax determined by AET ${\times}$ AR, shoot N content and grain number per unit land area. These models could explain the variations of GW and GN caused not only by variations of temperature and solar radiation but also by variations of growth traits due to different sowing date, nitrogen fertilization amount and row spacing with relatively high accuracy.

• The Journal of Korean Academy of Prosthodontics
• /
• v.52 no.2
• /
• pp.82-89
• /
• 2014

Purpose: The purpose of this study was to observe the change of viscoelastic properties of dental resin cements during polymerization. Materials and methods: Six commercially available resin cement materials (Clearfil SA luting, Panavia F 2.0, Zirconite, Variolink N, RelyX Unicem clicker, RelyX U200) were investigated in this study. A dynamic oscillation-time sweep test was performed with AR1500 stress controlled rheometer at $32^{\circ}C$. The changes in shear storage modulus (G'), shear loss modulus (G"), loss tangent (tan ${\delta}$) and displacement were measured for twenty minutes and repeated three times for each material. The data were analyzed using one-way ANOVA and Tukey's post hoc test (${\alpha}$=0.05). Results: After mixing, all materials demonstrated an increase in G' with time, reaching the plateau in the end. RelyX U200 demonstrated the highest G' value, while RelyX Unicem (clicker type) and Variolink N demonstrated the lowest G' value at the end of experimental time. Tan ${\delta}$was maintained at some level and reached the zero at the starting point where G' began to increase. The tan ${\delta}$and displacement of the tested materials showed similar pattern in the graph within change of time. The displacement of all 6 materials approached to zero within 6 minutes. Conclusion: Compared to other resin cements used in this study, RelyX U200 maintained plastic property for a longer period of time. When it completed the curing process, RelyX U200 had the highest stiffness. It is convenient for clinicians to cement multiple units of dental prostheses simultaneously.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.363-363
• /
• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.362-362
• /
• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.