• 한국통신학회논문지
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• 제28권10C호
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• pp.1013-1022
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• 2003

본 논문은 연속적인 영상에 대해 비모수적 영상 처리 기법과 칼만 필터 기반의 동적 AR(2) 프로세스 기법을 적용하여 객체의 움직임을 적응적으로 추적하는 실시간 객체 추적 알고리즘을 구현하였다. 다양한 환경 조건에서 입력되는 영상에 대해 비모수적 영상 처리 기법을 이용하여 처리함으로써 효과적으로 움직임 객체를 추출하였으며, 객체의 움직임을 동적 AR(2) 프로세스 모형으로 모델링하고 동적으로 변하는 AR(2) 프로세스의 파라미터를 칼만 필터를 통해 추정함으로써 객체의 다변적인 움직임을 적응적으로 예측하여 추적할 수 있었다. 구현된 객체 추적 시스템을 실험한 결과, 기존의 선형 칼만 필터 기법을 이용한 추적 기법과 비교하여 추정 오차가 약 1/2.5∼1/50 만큼 더 적게 나와 객체의 움직임을 더 근사적으로 추적함을 알 수 있었다.

• Journal of Korean Dental Science
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• 제15권2호
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• pp.166-171
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• 2022

This case report describes a dynamic digital esthetic rehabilitation procedure that integrates a new three-dimensional augmented reality (3D-AR) technique to treat a patient with multiple missing anterior teeth. The prostheses were designed using computer-aided design (CAD) software and virtually trialed using static and dynamic visualization methods. In the static method, the prostheses were visualized by integrating the CAD model with a 3D face scan of the patient. For the dynamic method, the 3D-AR application was used for real-time tracking and projection of the CAD prostheses in the patient's mouth. Results of a quick survey on patient satisfaction with the two visualization methods showed that the patient felt more satisfied with the dynamic visualization method because it allowed him to observe the prostheses directly on his face and be more proactive in the treatment process.

• 설비공학논문집
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• 제19권12호
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• pp.883-888
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• 2007

As a starting point of investigating what molecular dynamic simulations can reveal about the nature of atomic level of heating and cooling process, argon described by the LJ potential is considered. Stepwise heating and cooling of constant rates are simulated in the NPT (constant number, pressure and temperature) ensemble. Hysteresis is found due to the superheating and supercooling. Drastic change of volume and energy is involved with phase change, but the melting point can not be obtained by simply observing the changes of these quantities. Since liquid and solid phases can co-exist at the same temperature, Gibbs free energy should be calculated to find the temperature where the Gibbs free energy of liquid is equal to that of the solid since the equilibrium state is the state of minimum Gibbs free energy. The obtained melting temperature, $T^*=0.685$, is close to that of the experiment with only 2% error.

• 열처리공학회지
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• 제18권5호
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• 인터넷정보학회논문지
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• 제15권1호
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• pp.171-178
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• 2014

본 논문에서는 실시간으로 가상현실의 증강객체에 외부의 힘이 작용할 때 증강된 가상 객체의 동적 모델링 방법을 제시하였다. 가상객체의 자연스러운 움직임을 시뮬레이션 하기 위하여 AR 객체에 적용되는 외부의 힘의 변화에 대하여 Newton의 운동법칙을 적용하여 객체의 움직임을 설명하는 식을 생성하였다. 동적 모델링 과정에서 증강된 객체와 햅틱 장비간의 실질적 상호작용이 발생하며 이때 외부의 힘이 가상객체에 전달된다. 증강된 객체의 고유특성은 강체 혹은 탄성체의 성질을 갖는 모델이다. 강체의 동적 모델링에서는 선형 모멘텀과 각속도 모멘텀을 모두 고려하여 증강된 객체와 햅틱 스틱이 충돌할 때 수행하였다. 비강체의 동적 모델링에 있어서는 탄성체의 변형 모델은 내외의 힘과 제한요소에 자연적으로 반응하기 때문에 물리기반 시뮬레이션 방법을 적용하였다. 증강된 탄성체는 햅틱 인터페이스를 통해 사용자에 의하여 발생하는 힘의 특성과 모델의 고유 특성에 따라 자연스럽게 변형된다. 변형 물체의 모델링을 위하여 Newton의 제 2 운동법칙이라 불리는 질량-스프링 연결 시스템을 적용하였다. 실험을 통하여 증강된 강체와 비강체의 성질을 지닌 가상 객체에 햅틱 장비에 의한 햅틱 상호작용이 발생 할 때 객체의 변환을 자연스럽게 가시화 할 수 있었다.

• 천문학회보
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• 제38권2호
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• pp.89.1-89.1
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• 2013

We present a multiwavelength study of the X-class flare, which occurred in active region (AR) NOAA 11339 on 3 November 2011. The EUV images recorded by SDO/AIA show the activation of a remote filament (located north of the AR) with footpoint brightenings about 50 min prior to the flare occurrence. The kinked filament rises-up slowly and after reaching a projected height of ~49 Mm, it bends and falls freely near the AR, where the X-class flare was triggered. Dynamic radio spectrum from the Green Bank Solar Radio Burst Spectrometer (GBSRBS) shows simultaneous detection of both positive and negative drifting pulsating structures (DPSs) in the decimetric radio frequencies (500-1200 MHz) during the impulsive phase of the flare. The global negative DPSs in solar flares are generally interpreted as a signature of electron acceleration related to the upward moving plasmoids in the solar corona. The EUV images from AIA $94{\AA}$ reveal the ejection of multiple plasmoids, which move simultaneously upward and downward in the corona during the magnetic reconnection. The estimated speeds of the upward and downward moving plasmoids are ~152-362 and ~83-254 km/s, respectively. These observations strongly support the recent numerical simulations of the formation and interaction of multiple plasmoids due to tearing of the current-sheet structure. On the basis of our analysis, we suggest that the simultaneous detection of both the negative and positive DPSs is most likely generated by the interaction/coalescence of the multiple plasmoids moving upward and downward along the current-sheet structure during the magnetic reconnection process. Moreover, the differential emission measure (DEM) analysis of the active region reveals presence of a hot flux-rope structure (visible in AIA 131 and $94{\AA}$) prior to the flare initiation and ejection of the multi-temperature plasmoids during the flare impulsive phase.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -3
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• pp.1543-1546
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• 2002

The expandable 4 bit adder/subtracter IC was designed using the adiabatic and dynamic CMOS logic (ADCL) circuit as the ultra-low power consumption basic logic circuit and the IC was fabricated using a standard 1.2 ${\mu}$ CMOS process. As the result the steady operation of 4 bit addition and subtraction has been confirmed even if the frequency of the sinusoidal supply voltage is higher than 10MHz. Additionally, by the simulation, at the frequency of 10MHz, energy consumption per operation is obtained as 93.67pJ (ar addition and as 118.67pJ for subtraction, respectively. Each energy is about 1110 in comparison with the case in which the conventional CMOS logic circuit is used. A simple and low power oscillation circuit is also proposed as the power supply circuit f3r the ADCL circuit. The oscillator operates with a less one volt of DC supply voltage and around one milli-watts power dissipation.