• Title/Summary/Keyword: Dual structure

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MINIATURIZED MICROSTRIP DUAL BAND-STOP FILTER USING STEPPED IMPEDANCE RESONATORS (P형 계단형 임피던스 공진기를 이용한 소형화된 마이크로스트립 이중 대역 저지 필터)

  • Park, Young-Bae;Kim, Gi-Rae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.05a
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    • pp.43-46
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    • 2011
  • A novel circuit structure of dual-band bandstop filters is proposed in this paper. This structure comprises two shunt-connected tri-section stepped impedance resonators with a transmission line in between. Theoretical analysis from the equivalent circuit and design procedures are described. We represented graphs for filter design from the derived synthesis equations by resonance condition of circuits. Notably, advantages of the proposed filter structure are compact size in design, wide range of realizable resonance frequency ratio, and more realizable impedances.

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Multilevel Magnetization Switching in a Dual Spin Valve Structure

  • Chun, B.S.;Jeong, J.S.
    • Journal of Magnetics
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    • v.16 no.4
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    • pp.328-331
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    • 2011
  • Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent anti-ferromagnetic pinning layers. The maximum magnetoresistance ratio is 7.9% for the current-perpendicular-to-plane and 7.2% for the current-in-plane geometries, with intermediate magnetoresistance ratios of 3.9% and 3.3%, respectively. The requirements for using this exchange-biased stack as a three-state memory device are also discussed.

Low-Phase Noise Dual-band VCO Using PBG Structure (Photonic Bandgap 구조를 이용한 저 위상잡음 듀얼밴드 VCO에 관한 연구)

  • 조용기;서철헌
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.2
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    • pp.53-58
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    • 2004
  • In this paper, the low-phase dual-band VCO, by adding switching circuit with PIN diode at feedback loop of the oscillation part having negative-resistance, is realized. In order to reduce the phase noise of the VCO, PBG structure applied to the ground plane of the resonator. When applying for PBG structure, output power is -9.17㏈m and phase noise is -102㏈c/Hz at 5.25㎓, output power is -5.17㏈m and phase noise is -101㏈c/Hz at 1.8㎓, respectively.

A Dual In-Plane Electrode Structure for Better Brightness in a Helix-Deformed FLCD

  • You, Doo-Hwan;Lee, Sin-Doo;Lee, Ju-Hyun;Na, Do-Jun
    • Journal of Information Display
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    • v.2 no.1
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    • pp.1-4
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    • 2001
  • We propose a dual in-plane parallel electrode structure of a vertical configuration of a helix-deformed ferroelectric liquid crystal (HDFLC) mode for better brightness than a single in-plain electrode case. This structure provides high brightness in addition to the analog gray scale capability, fast response, and wide-viewing characteristics. In contrast to a conventional HDFLC in a planar geometry, smectic layers arrange themselves parallel to the substrates and thus extremely uniform alignment of molecules in a large area is naturally achieved in our new configuration.

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The Characteristics of a Dual gate Trench Emitter IGBT (이중 Gate를 갖는 Trench Emitter IGBT의 특성)

  • Gang, Yeong-Su;Jeong, Sang-Gu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.9
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    • pp.523-526
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    • 2000
  • A dual gate trench emitter IGBT structure is proposed and studied numerically using the device simulator MEDICI. The on-state forward voltage drop latch-up current density turn-off time and breakdown voltage of the proposed structure are compared with those of the conventional DMOS-IGBT and trench gate IGBT structures. The proposed structure forms an additional channel and increases collector current level resulting in reduction of on -state forward voltage drop. In addition the trench emitter increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage when the half trench gate width(Tgw) and trench emitter depth(Ted) are fixed at $1.5\mum\; and\; 2\mum$, respectively

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Knowledge Recommendation Based on Dual Channel Hypergraph Convolution

  • Yue Li
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.17 no.11
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    • pp.2903-2923
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    • 2023
  • Knowledge recommendation is a type of recommendation system that recommends knowledge content to users in order to satisfy their needs. Although using graph neural networks to extract data features is an effective method for solving the recommendation problem, there is information loss when modeling real-world problems because an edge in a graph structure can only be associated with two nodes. Because one super-edge in the hypergraph structure can be connected with several nodes and the effectiveness of knowledge graph for knowledge expression, a dual-channel hypergraph convolutional neural network model (DCHC) based on hypergraph structure and knowledge graph is proposed. The model divides user data and knowledge data into user subhypergraph and knowledge subhypergraph, respectively, and extracts user data features by dual-channel hypergraph convolution and knowledge data features by combining with knowledge graph technology, and finally generates recommendation results based on the obtained user embedding and knowledge embedding. The performance of DCHC model is higher than the comparative model under AUC and F1 evaluation indicators, comparative experiments with the baseline also demonstrate the validity of DCHC model.

Design of Dual-Stage Actuator Controller for Hard Disk Drive using Piezoelectric Microactuator (압전형 초소형 구동기를 이용한 하드 디스크 드라이브의 Dual-stage 구동기 제어기 설계)

  • 김종철;정정주
    • 제어로봇시스템학회:학술대회논문집
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    • 2000.10a
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    • pp.173-173
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    • 2000
  • This paper discusses a observer based discrete-time controller design and presents a modified control structure for dual-stage hard disk drive systems using piezoelectric microactuator(MA). In plant modeling, dynamic coupling between VCM and MA is not considered. Each controller is organized independently and designed using pole placement. Simulation result shows that 4th-order controller achieves about 3kHz servo bandwidth and 0.22msec of 2% settling time.

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A Design and Implementation of Dual-band Monopole Antenna with DGS (DGS를 이용한 이중 대역 모노폴 안테나의 설계 및 제작)

  • Choi, Tea-Il;Kim, Jeong-Geun;Yoon, Joong-Han
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.9
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    • pp.841-848
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    • 2016
  • In this paper, a microstrip-fed dual-band monopole antenna with DGS(: Defected Ground System) for WLAN(: Wireless Local Area Networks) applications was designed, fabricated and measured. The proposed antenna is based on a microstrip-fed structure, and composed of two strip lines and DGS structure and then designed in order to get dual band characteristics. We used the simulator, Ansoft's High Frequency Structure Simulator(: HFSS) and carried out simulation about parameters W2, L10, W3, and DGS to get the optimized parameters. The proposed antenna is made of $21.0{\times}36.0{\times}1.6mm3$ and is fabricated on the permittivity 4.4 FR-4 substrate. The experiment results are shown that the proposed antenna obtained the -10 dB impedance bandwidth 700 MHz(2.10~2.80 GHz) and 1,780 MHz(5.02~6.80 GHz) covering the WLAN bands. Also, the measured gain and radiation patterns characteristics of the proposed antenna are presented at required dual-band(2.4GHz band/5.0GHz band), respectively.

Hole Mobility Characteristics of Biaxially Strained SiGe/Si Channel Structure with High Ge Content (고농도의 Ge 함량을 가진 Biaxially Strained SiGe/Si Channel Structure의 정공 이동도 특성)

  • Jung, Jong-Wan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.44-48
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    • 2008
  • Hole mobility characteristics of two representative biaxially strained SiGe/Si structures with high Ge contents are studied, They are single channel ($Si/Si_{1-x}Ge_x/Si$ substrate) and dual channel ($Si/Si_{1-y}Ge_y/Si_{1-x}Ge_x/Si$ substrate), where the former consists of a relaxed SiGe buffer layer with 60 % Ge content and a tensile-strained Si layer on top, and for the latter, a compressively strained SiGe layer is inserted between two layers, Owing to the hole mobility performance between a relaxed SiGe film and a compressive-strained SiGe film in the single channel and the dual channel, the hole mobility behaviors of two structures with respect to the Si cap layer thickness shows the opposite trend, Hole mobility increases with thicker Si cap layer for single channel structure, whereas it decreases with thicker Si cap layer for dual channel. This hole mobility characteristics could be easily explained by a simple capacitance model.