• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.12
• /
• pp.2305-2310
• /
• 2011

This paper describes a design of dual band balanced amplifier using a lefted handed meta-material transmission line structure for high frequency application. Meta-material transmission lines have been known to have dual band frequency responses. A dual band branch line hybrid coupler is designed using the meta-material transmission lines, and measured at first. Two identical dual band amplifiers are also designed, built and tested using the same meta-material transmission structure. The proposed dual band balanced amplifier is composed of those dual band branch line hybrid coupler and amplifiers. In order to suggest an design example, a prototype of dual band balanced amplifier is built and measured at the dual frequencies, 1800MHz($f_1$) and 2300MHz($f_2$). The simulation and measurement show that the fabricated balanced amplifier operates well at the desired dual frequencies bands with the gain of 11.12dB and 17.67dB at $f_1$ and $f_2$, respectively, with a good agreement with the simulation results.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.11
• /
• pp.2032-2037
• /
• 2010

This paper describes a design of dual band amplifier using left handed (LHJ) transmission line, which is a part of composite right/left handed (CRLH) transmission line. It is well known that CRLH transmission lines show dual band frequency response. At first, two single-band amplifiers for frequency f1 and f2 are designed, and their matching networks at both amplifiers are synthesized into the dual band matching network by adopting CRLH structure. As an example for proving the validity of the proposed design, a dual band amplifier operating at 1800MHz and 2300MHz is designed, fabricated and measured. The simulation and measurement show that the proposed amplifier operates well at the desired dual bands with the gain of 13.65dB and 19dB at 1850MHz and 2360MHz, respectively, and a good matching performances. In addition, a quite good agreement between the simulation and measurement is observed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.3
• /
• pp.376-379
• /
• 2014

In this paper, we designed more improving a dual-band power amplifier than the transceiver of RFID reader that operates at 910 MHz and 2.45 GHz. A dual-band power amplifier has two circuits. One matching circuit is composed lumped element in the band of 910 MHz. The other matching circuit using distributed element in the high band of 2.45 GHz. So, this dual-band power amplifier works as Band Rejection Filter in the band of 910 MHz but in the high band of 2.45 GHz works as Band Pass Filter. Therefore, this is composed a microstrip transmission line. A power amplifier is showed gains of 8 dB output power at 910 MHz and 1.5 dB output power at 2.45 GHz. If input power is 10 dBm, both of bands output 20 dBm.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.45 no.1
• /
• pp.110-114
• /
• 2008

In this paper, high efficient class F power amplifier with dual band has been realized. Dual band power amplifier have used modify stub matching for single FET, center frequency 2.14GHz and 5.2GHz respectively. Dual band amplifier is 32.65dBm output power, gain 11dB and PAE 36% at the 2.14GHz, 7dB gain at the 5.2GHz. Design of a dual band class F power amplifier using harmonic control circuit. The measured are 9.9dB gain, 30dBm output power and PAE 55% at the 2.14GHz, 11.7dB gain at the 5.2GHz. This paper is being used the load-pull method and it maximizes output power and it is using the only one transistor in the paper. As a result, this research will obtain a dual band high PAE power amplifier.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.47 no.2
• /
• pp.56-61
• /
• 2010

In this paper, high efficient power amplifier with dual band has been realized. Dual band power amplifier have used modify stub matching for single FET, center frequency 2.14GHz and 5.2GHz respectively. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Because the control of the all harmonic components is very difficult m dual-band, we have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Dual-band characteristics in the output has to balance. Two operating frequencies are chosen at 2.14 GHz and 5.2 GHz in this work. The measured results show that the output power of 28.56 dBm and 29 dBm was obtained at 2.14 GHz and 5.2 GHz, respectively. At this point, we have obtained the power-added efficiency (PAE) of 65.824 % and 69.86 % at two operation frequencies, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.45 no.12
• /
• pp.7-12
• /
• 2008

In this paper, a highly efficiency power amplifier is presented for multi-band antenna system. The class F power amplifier operating in dual-band designed with one LDMOSFET. An operating frequency of power amplifier is 900 MHz and 2.14 GHz respectively Matching networks and harmonic control circuits of amplifier are designed by using the unit cell of composite right/left-handed(CRLH) transmission line(TL) realized with lumped elements. The CRLH TL can lead to metamaterial transmission line with the dual-band holing capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Because the control of all harmonic components for high efficiency is very difficult, we have controled only the second- and third-harmonics to obtain the high efficiency with the CRLH TL. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.15 no.8
• /
• pp.788-793
• /
• 2004

This paper proposes new configuration for the dual power amplifier that operates at 5.8 GHz for the wireless LAN and 1.8 GHz for the PCS. It dose not select the input signal but amplify the dual band signals simultaneously. Broadband diplexer is used at the input to separate the dual band signals. Output power of each amplifier is 1 W. The PBG is employed to improve the performance of power amplifier. Generally, the PBG is employed at the end of output matching network. But in this paper, the PBG is employed in the load pull output matching circuit of amplifer to maximize the output power.

• Journal of IKEEE
• /
• v.22 no.4
• /
• pp.1050-1055
• /
• 2018

In this paper, we analyzed the sensitivity of matching elements for the dual-band operation of a power amplifier with composite right/left-handed (CRLH) transmission lines. Metamaterial theory enables CRLH transmission to support arbitrary impedance matching at dual frequencies. In general, at sub-GHz range, the CRLH matching networks are commonly implemented with lumped elements, which are prone to manufacturing distribution. In order to reduce the effect from the distribution of element values in design, we suggest a method to analyze the sensitivity of matching elements from the performance aspect of power amplifiers. Based on the analysis, a 40dBm dual-band power amplifier operating at 0.7GHz and 1.5GHz is designed.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.47 no.12
• /
• pp.78-83
• /
• 2010

In this paper, a novel dual-band power amplifier using metamaterials has been realized with one RF GaN HEMT diffusion metal-oxide-semiconductor field effect transistor. The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. We have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 900 MHz and 2140 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 900 MHz and 2140 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) and IMD of 60.2 %, -23.17dBc and 67.3 %, -25.67dBc at two operation frequencies, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.48 no.9
• /
• pp.54-58
• /
• 2011

In this paper a dual-band Class-E power amplifier using Composite Right-/Left-Handed transmission lines and PIN diode is proposed. Dual-band operation is achieved by the frequency offset and nonlinear phase slope of CRLH TL for the matching network of power amplifiers. The proposed power amplifier has been realized by using in the input and the output matching network for high power added efficiency. PIN diode has been used to obtain the dual-band of power amplifier. The measured results show that output powers of 42.17 dBm and 41.43 dBm were obtained at 800 MHz and 1900 MHz, respectively. At this frequency, we have obtained the power-added efficiency(PAE) of 67.84 % and 65.31 % in two operation frequencies, respectively.