• Title/Summary/Keyword: Dual Interface

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The study on dynamic fracture toughness of friction-welded M.E.F. dual phase steel (복합조직강의 마찰용접부에 대한 동적파괴특성)

  • 오세욱;유재환;이경봉
    • Journal of Welding and Joining
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    • v.7 no.3
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    • pp.19-27
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    • 1989
  • Both the SS41 steel and the M.E.F(martensite encapsulated islands of frrite) dual phase steel made of SS41 steel by heat treatment were welded by friction welding, and then manufactured machinemade Vnotch standard Charpy impact specimens and precracked with a fatigue system at BM(base metal), HAZ(heat affected zone) and WZ(weld interface Zone). The impact test of them was performed with an instrumented impact test machine at a number of temperatures in constant loading velocity and the dynamic fracture characteristics were studied on bases of the absorbed energy, dynamic fracture toughness and fractography from the test. The results obtained are as follows; At the room temperature, the absorbed energy is HAZ.geq.WZ.geq.BM in case of the M.E.F. dual phase steel: BM.geq.HAZ.geq.WZ in case of the SS41 steel, HAZ.geq.BM.geq.WZ at the low temperature. The absorbed energy is decreased markedly with the temperature lowering; it is highly dependent on the temperature. The dynamic fracture toughness of the M.E.F. dual phase steel is HAZ.geq.WZ.geq.BM at the room temperature; BM.geq.WZ.geq.HAZ below-60.deg. C. Therefore the reliability of friction welding is uncertain at the low temperature(below-60.deg. C). The dynamic fracture toughness of the SS41 steel; HZA.geq.WZ.geq.BM at overall temperature region. The flaw formed by rotational upsetting pressure was shown y SEM; in this region. The absorbed energy per unit area and dynamic fracture toughness were low relative to other region.

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Improved Bias Stress Stability of Solution Processed ITZO/IGZO Dual Active Layer Thin Film Transistor

  • Kim, Jongmin;Cho, Byoungdeog
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.215.2-215.2
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    • 2015
  • We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.

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A Design of PLL for 6 Gbps Transmitter in Display Interface Application (디스플레이 인터페이스에 적용된 6 Gbps급 송신기용 PLL(Phase Locked Loop) 설계)

  • Yu, Byeong-Jae;Cho, Hyun-Mook
    • Journal of IKEEE
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    • v.17 no.1
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    • pp.16-21
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    • 2013
  • Recently, frequency synthesizers are being designed in two ways narrow-band loop or dual-loop for wide-band to reduce the phase noise. However, dual-loop has the disadvantage of center frequency mismatch and requiring an extra loop. In this paper, we propose a new structure that supports a range of 800Mhz ~ 3Ghz with multiple control of the single-loop frequency synthesizer without another loop. The control voltage of the VCO(coarse, fine) will be fixed, and finally the VCO will have a low Kvco. The frequency synthesizer is simulated using UMC $0.11{\mu}m$ process, proposed frequency synthesizer can be used in a variety of applications in the future.

Development of Eye-Tracking System Using Dual Machine Learning Structure (이중 기계학습 구조를 이용한 안구이동추적 기술개발)

  • Gang, Gyeong Woo;Min, Chul Hong;Kim, Tae Seon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.7
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    • pp.1111-1116
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    • 2017
  • In this paper, we developed bio-signal based eye tracking system using electrooculogram (EOG) and electromyogram (EMG) which measured simultaneously from same electrodes. In this system, eye gazing position can be estimated using EOG signal and we can use EMG signal at the same time for additional command control interface. For EOG signal processing, PLA algorithms are applied to reduce processing complexity but still it can guarantee less than 0.2 seconds of reaction delay time. Also, we developed dual machine learning structure and it showed robust and enhanced tracking performances. Compare to conventional EOG based eye tracking system, developed system requires relatively light hardware system specification with only two skin contact electrodes on both sides of temples and it has advantages on application to mobile equipments or wearable devices. Developed system can provide a different UX for consumers and especially it would be helpful to disabled persons with application to orthotics for those of quadriplegia or communication tools for those of intellectual disabilities.

Implementation of the ACELP/MPMLQ-Based Dual-Rate Voice Coder Using DSP (ACELP/MP-MLQ에 기초한 dual-rate 음성 코더의 DSP 구현)

  • Lee Jae-Sik;Son Yong-Ki;Jeon Il;Chang Tae-Gyu;Min Byoung-Ki
    • Proceedings of the Acoustical Society of Korea Conference
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    • spring
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    • pp.51-54
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    • 2000
  • This paper describes the fixed-point DSP implementation of a CELP(code-excited linear prediction)-based speech coder. The effective realization methodologies to maximize the utilization of the DSP's architectural features, specifically Parallel movement and pipelining are also presented together with the implementation results targeted for the ITU-T standard G.723.1 using Motorola DSP56309. The operation of the implemented speech coder is verified using the test vectors offered by the standard as well as using the peripheral interface circuits designed for the coder's real-time operation.

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Development of 30kw HAWT/VAWT hybrid wind power system (30kw급 수직/수평축 통합형 풍력발전 시스템 개발)

  • Shinn, Chan;Kim, Ji-Ern;Lim, Jong-Youn;Song, Seung-Ho;Rho, Do-Whan;Kim, Dong-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.203-206
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    • 2001
  • A 30kw Dual rotor Turbines HAWT/VAWT combined wind turbine system that can drastically enhance the power production capability compared to conventional Single Rotor Turbine HAWT system. The combined system that takes advantage of strong point of both horizontal and vertical Axis wind turbine system developed by a venture firm KOWINTEC of Chonbuk national university. The HAWT/VAWT hybrid system has been successfully field tested and commercial operating since Feb. 12, 2001 in Hae-chang rest park, Bu-an county near the Sae Man-Kum Sea Dike. This paper will briefly describe the field test results performance and a special aerodynamic structure with bevel-planetary gear box of Dual Rotor Wind Turbine system.

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ANALYSIS ON THE INFLUENCE OF XPD IN DUAL-POLARIZED TRANSMISSION

  • Park, Durk-Jong;Ahn, Sang-Il
    • Proceedings of the KSRS Conference
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    • v.2
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    • pp.784-787
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    • 2006
  • Dual-polarized transmission is one of the effective methods to transmit such a high speed data thanks to two independent channel leads to the orthogonal feature between RHCP (Right-Hand Circular Polarization) and LHCP (Left-Hand Circular Polarization). However, in practical case, the transmitted signal by RHCP polarized antenna in satellite can be occurred at the output port of LHCP polarized antenna in ground station, vice versa. XPD (Cross-Polarization Discrimination) is the ratio of the signal level at the output of a receiving antenna that is nominally co-polarized to the transmitting antenna to the output of a receiving antenna of the same gain but nominally orthogonally polarized to the transmitting antenna. In this paper, the detailed estimation of XPD within the interface between satellite and ground station is written and the influence of XPD to link performance is also described.

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Smart WLAN Discovery for Power Saving of Dual-Mode Terminals

  • Park, Hyunho;Lee, Hyeong Ho
    • ETRI Journal
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    • v.35 no.6
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    • pp.1144-1147
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    • 2013
  • Dual-mode terminals (DMTs) equipped with cellular and WLAN interfaces have become popular in recent years. Users of DMTs can enjoy high-speed WLAN Internet access and wide area Internet access to cellular networks. However, a DMT may consume power inefficiently when discovering a WLAN with inherently limited service coverage. In this letter, we propose to use smart WLAN discovery (SWD) to minimize the power consumption required for WLAN discovery. To minimize the power consumption of a DMT, an SWD DMT activates its WLAN interface only when the DMT transfers data within the WLAN coverage area. The simulation results of SWD show an improved power-saving performance compared to previous WLAN discovery schemes.

DSCM (Dual Switching Control Module) Design to Heighten Reliability of System (시스템의 신뢰도를 높이기 위한 교환제어모듈 설계)

  • Jeong, Eui-Kuk;Chang, Kyung-Bae;Shim, Il-Joo;Park, Gwi-Tae
    • Proceedings of the KIEE Conference
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    • 2004.07d
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    • pp.2606-2609
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    • 2004
  • As computer system has developed, the break down rate of system has been increased. So, engineers have been interested in reliability of system. General method that is used to heighten reliability of system is Redundancy of System by dual switching control. In this paper, we propose DSCM which can give Redundancy structure in existent PC(Microsoft Window 2000 OS) base system. And we experiment redundancy structure that is applied DSCM to currently using train control in IFC(Interface Computer) system.

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Feasibility Study of Non-volatile Memory Device Structure for Nanometer MOSFET (나노미터 MOSFET비휘발성 메모리 소자 구조의 탐색)

  • Jeong, Ju Young
    • Journal of the Semiconductor & Display Technology
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    • v.14 no.2
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    • pp.41-45
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    • 2015
  • From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.