Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2015.08a
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- Pages.215.2-215.2
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- 2015
Improved Bias Stress Stability of Solution Processed ITZO/IGZO Dual Active Layer Thin Film Transistor
- Kim, Jongmin (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
- Cho, Byoungdeog (Department of Electrical and Computer Engineering, Sungkyunkwan University)
- Published : 2015.08.24
Abstract
We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of