• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1515-1517
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• 2001

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces have been interested. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-6}$ Torr and at a deposition rate of 0.3$\AA$/sec. Aluminium and gold were used for gate and source/drain electrodes. before pentacene is deposited on the insulator, the gate dielectric surfaces of two samples were rubbed with lateral and perpendicular to direction of the channel length respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.233-236
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• 2000

Polycrystalline Silicon Thin Film Transistors(Poly-Si TFT's), fabricated at temperature lower than $600^{\circ}C$ are now largely used in many applications, particularly in large area electrons. In this work, electrical stress effects on Poly-Si TFT's fabricated by Solid Phase Crystal(SPC) was investigated by measuring electric properities such as transfer and output characteristics, and channel conductance. Consequently, It is turned out that it should be noted the output characteristics, drain current and channel conductance, strongly degrade around origin.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.157-163
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• 2002

A new flash EEPROM device with p^＋ poly-Si control gate and n^＋ poly-Si floating side gate was fabricated and characterized. The n^＋ poly-Si gate is formed on both sides of the p^＋ poly-Si gate, and controls the underneath channel conductivity depending on the number of electron in it. The cell was programmed by hot-carrier-injection at the drain extension, and erased by direct tunneling. The proposed EEPROM cell can be scaled down to 50 nm or less. Shown were measured programming and erasing characteristics. The channel resistance with the write operation was increased by at least 3 times.

• Proceedings of the KIEE Conference
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• 2007.04a
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• pp.346-348
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• 2007

Underground pipe is an instrument to transport rapidly and safely a lot of fluid like gas, oil, water supply and drain system. It acts like blood vessels of human body in a modern industry. As in this country, the pipe facilities have been constructing since 1970's. The pipes constructed for a long time ago are already starting to reveal the problem like corrosion and most of them are built underground. So for companies, the managing of the underground pipes is very hard because it needs high technology and a lot of money. So we made a new robot system to repair and maintain the pipes at a low price. This new robot is devised using pressing wall type to work inside 700${\sim}$900(mm) size pipe. And it has good carrying and working power.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1590-1592
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• 2002

In this work the electrical characteristics of organic TFTs using organic insulator and flexible polyester substrate have been investigated. Pentacene and PVP(polyvinylphenol) are used as an active semiconducting layer and dielectric layer respectively. Pentacene was thermally evaporated in vacuum at a pressure of about $1{\times}10^{-6}$ Torr and at a deposition rate of $0.5{\AA}$/sec, and PVP was spin-coated. Aluminium and gold were used for gate and source/drain electrodes. 0.1mm thick flexible polyester substrate was used instead of glass or silicon wafer.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.64-66
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• 2009

We obtained high performance of n-type organic thin film transistors (OTFTs) using a solution process. N, N' bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-$8CN_2$) in ambient air. Low work function interlayer on source/drain is needed to enhance the electron injection to low LUMO level of n-type organic semiconductor. By using self-assembled monolayer (SAM) the field-effect mobility of 0.33 $cm^2$/Vs was achieved.

• Proceedings of the SAREK Conference
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• 2007.11a
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• pp.534-539
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• 2007

The objectives of the present work is to investigate the influence of the solution cooled absorber(SCA), refrigerant drain heat exchanger(RSX), exhaust gas/solution heat exchanger(ESX) and high efficiency solution heat exchanger on COP for a double-effect series-flow absorption chiller. A simulation program has been prepared for the cycle analysis of absorption chillers. As a result, Solution heat exchangers(LSX, HSX) are a most effective element for the COP than the others. In spite of the poor contribution to COP, SCA make a rule to reduce the crystallization phenomena of LiBr solution at solution heat exchanger. And the optimum solution split ratio are varied with the relative size of RSX and LSX.

• Journal of IKEEE
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• v.19 no.4
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• pp.514-519
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• 2015

We propose the multiple gate structure of double gate junctionless metal oxide silicon field oxide transistor (JL MOSFET) for device optimization. Since different workfunction within multiple metal gates, electric potential nearby source and drain region is modulated in accordance with metal gate length. On current, off current and threshold voltage are influenced with gate structure and make possible to meet some device specification. Through the device simulation work, performance optimization of double gate JL MOSFETs are introduced and investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.445-448
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• 1999

In this Paper, we present simple physical model of the Capacitance characteristics for GaAs MESFET\`s in wide temperatures. In this model, gate-source and gate-drain capacitances are represented by analytical expressions which are classified into three different regions for bias voltage. This model contained the temperature dependent variable that is the built-in voltage and the depletion width. Using the equations obtained in this work a submicron gate length MESFET has simulated and theoretical result are in good agreement with the experimental measurement.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.20 no.10
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• pp.662-668
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• 2008

The objectives of the present work are to investigate the influence of the solution cooled absorber(SCA), refrigerant drain heat exchanger(RSX), exhaust gas/solution heat exchanger(ESX) and high efficiency solution heat exchanger on COP for a double-effect series-flow absorption chiller. A simulation program has been prepared for the cycle analysis of absorption chillers. As a result, solution heat exchangers(LSX, HSX) are the most effective element for the COP than the others. In spite of the poor contribution to COP, SCA plays an important role to reduce the crystallization phenomena of LiBr solution at solution heat exchanger. And the optimum solution split ratio varies with the relative size of RSX and LSX.