• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.156-161
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• 2015

In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects of variations of the device’s key electrical parameters, such as threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, oncurrent, leakage current and on/off current ratio are presented and analyzed. We will also describe some simulation results related to the influence of the gate work function variations on the considered structure. These variations have a direct impact on the electrical device characteristics. The results show that the threshold voltage decreases when we reduce the gate metal work function Φ_m. As a consequence, the behavior of the leakage current improves with increased Φ_m. Therefore, the short channel effects in real 3-D FinFET structures can reasonably be controlled and improved by proper adjustment of the gate metal work function.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.29 no.4
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• pp.185-194
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• 2017

Currently, in comparison with other architectural estimations, the estimation work regarding building mechanical-service systems is time-consuming, and the process is continuously becoming more difficult because of the increased usage of the attached piping materials such as fittings and hangings in addition to their complicated construction processes. To improve this problem, the Korean authority provides a simple estimation method for the attached-material rate regarding the main piping material, which is the most time-consuming work in the architectural-mechanical estimation. However, to be an applicable method on construction sites, a proper conversion rate of the attached-piping material is still required for the proposed method regarding building usage and working types. Therefore, the purpose of this research is the calculation of the rate of the attached-piping materials such as the fittings and supports through the building of the mechanical-service work types of mechanical rooms, air conditioning, domestic water and hot-water supplies, and the drain-, vent-, and gas-piping work in office buildings that have been designed after 2010.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2892-2898
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• 2015

We propose a new Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor(DIG Ambi-SiNWFET). The proposed transistor has two types of gate such as polarity gate and control gate. The polarity gate determines the operation that the gate bias controls NMOSFET or PMOSFET. The voltage of control gate controls the current characteristic of the transistor. We investigated systematically work functions of the two gates and source/drain to operate ambipolar current-voltage characteristics using 2D device simulator. When the work functions of polarity gate, control gate and source/drain are 4.75eV, 4.5eV, and 4.8eV, respectively, it showed the obvious ambipolar characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.146-153
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• 2006

We have been investigating InGaAs HEMTs as a future high-speed and low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing $(L_{side})$ on the logic performance of 50 nm $In_{0.7}Ga_{0.3}As$ As HEMTs. We have found that $L_{side}$ has a large influence on the electrostatic integrity (or short channel effects), gate leakage current, gate-drain capacitance, and source and drain resistance of the device. For our device design, an optimum value of $L_{side}$ of 150 nm is found. 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs with this value of $L_{side}$ exhibit $I_{ON}/I_{OFF}$ ratios in excess of $10^4$, subthreshold slopes smaller than 90 mV/dec, and logic gate delays of about 1.3 ps at a $V_{CC}$ of 0.5 V. In spite of the fact that these devices are not optimized for logic, these values are comparable to state-of-the-art MOSFETs with similar gate lengths. Our work confirms that in the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs FETs hold considerable promise.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.238.2-238.2
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• 2011

Organic thin film transistors (OTFTs) have been attracting considerable attention because of their potential use in low-cost, large area, electronic devices such as flexible displays, biochemical sensors, and smart cards. In past several years, gold/pentacene has been frequently used in OTFTs because of the high mobility of pentacene and the high work function of gold. To improve the performance of the OTFTs contact area doping of pentacene with p-doping materials are well known. In this work we demonstrated selectively contact area doping of pentacene with Iodine vapor. For effective doping elevated pentacene layer under the source-drain area was deposited and exposed to Iodine vapor. We got better electrical performance for elevated pentacene structure rather than planer structure with relatively high field-effect mobility.

• Journal of the Korean Society of Mechanical Technology
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• v.20 no.6
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• pp.894-900
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• 2018

Among the soft ground improvement methods, PBD is the most common construction method because it is cheap and construction is fast. However, if the ground is rigid, additional work is required. In this study, the structural safety, natural vibration, and safety angle of the steel vertical tower structure were evaluated in the development of the PBD composite perforator which can be combined with drilling work and PBD construction. Structural safety was assessed when the wind load of 20 m/s was simultaneously applied to the PBD construction load of 20 tons, the perforating operation of 25 tons, and the wind speed of 50 m/s was applied only to the wind load. The natural frequencies were evaluated up to the sixth mode, and the safety angle was evaluated for static and dynamic safety angles.

• Journal of Korean Academy of Nursing Administration
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• v.16 no.4
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• pp.437-445
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• 2010

Purpose: The purpose of this study was to identify the factors influencing intention of migration by Korean hospital nurses. Methods: Using cross sectional correlational design, data were collected from 512 nurses working in 7 hospitals ranging in size from 300 to 900 beds in D city and K province of Korea. Data were analyzed by descriptive statistics, chi-square, and multiple hierarchical regression using the SPSS program. Results: There were significant differences in intention of migration by age, educational background, marital status, work experience, and yearly incomes. Although there was high intention of migration of the subjects, the level of preparation for migration was relatively low. The variables that were independently associated with intention of migration were graduates of RN-BSN program, personal factors of subjects, and environmental factors. Those who had lower perception on nursing images and work condition had significantly higher intention of migration than those who had higher perception. Full model accounted for 37.3% of the variance in intention of migration. Conclusion: To prevent brain drain of competent nurses in Korea, appropriate strategies to enhance work condition should be developed and the effect of migration of nurses should be investigated in further studies.

• Applied Chemistry for Engineering
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• v.23 no.3
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• pp.289-292
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• 2012

Au electrodes modified with self-assembled monolayers (SAMs) were used to control the work function of source/drain electrodes in triethylsilylethynyl anthradithiophene (TES ADT)-based organic thin film transistors (OTFTs). By using benzothiol (BT) and pentafluorobenzothiol (PFBT) SAMs, the hole injection barrier between Au and the highest occupied molecular orbital (HOMO) of TES ADT was controlled. After a solvent annealing, TES ADT OTFTs with PFBT SAM-treated Au electrodes were found to exhibit high field-effect mobilities of $0.05\;cm^2/Vs$ and on/off current ratios of $10^6$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.54-61
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• 2001

A fully on-chip open-drain CMOS output driver was designed for high bandwidth DRAMs, such that its output voltage swing was insensitive to the variations of temperature and supply voltage. An auto refresh signal was used to update the contents of the current control register, which determined the transistors to be turned-on among the six binary-weighted transistors of an output driver. Because the auto refresh signal is available in DRAM chips, the output driver of this work does not require any external signals to update the current control register. During the time interval while the update is in progress, a negative feedback loop is formed to maintain the low level output voltage ($V_OL$) to be equal to the reference voltage ($V_{OL.ref}$) which is generated by a low-voltage bandgap reference circuit. Test results showed the successful operation at the data rate up to 1Gb/s. The worst-case variations of $V_{OL.ref}$ and $V_OL$ of the proposed output driver were measured to be 2.5% and 7.5% respectively within a temperature range of $20^{\circ}C$ to $90^{\circ}C$ and a supply voltage range of 2.25V to 2.75V, while the worst-case variation of $V_OL$ of the conventional output driver was measured to be 24% at the same temperature and supply voltage ranges.

• Journal of Power System Engineering
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• v.21 no.3
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• pp.74-84
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• 2017

This paper presents the development of the underwater cleaning robot platform for a higher efficiency in manufacturing industry. Human operators directly go into the cistern and clean sludge after drainage of the water so far. It is sometimes dangerous because of the harmful chemical materials from the product making process. In addition, it takes long time for water drainage and supplying it back. However, the robot cleaning operation does not need to drain water so that it could be applied to the sludge cleaning work at any time without the plant pause. Moreover, it can prevent the safety accidents because human operators are not necessary to enter directly the sludge cisterns. This paper shows the performance of cleaning work that can be applied in the industrial field through the design and development of underwater cleaning robot platform. And these results demonstrate that the developed underwater cleaning robot has great possibilities to clean other industrial water cisterns.