• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1526-1528
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• 2003

본 연구에서는 P-type Si wafer에 1000[$^{\circ}C$]의 조건에서 열산화방식으로 성장시킨 산화막($SiO_2$) 두께 3000[${\AA}$] 그 위에 APCVD방법으로 형성시킨 질화막($Si_3N_4$)의 두께 500[${\AA}$], 1500[${\AA}$]인 시료에 대하여 전기적 특징 중 유전정접 특성에 관하여 조사하였다. [1] 또한 각각의 두께에 대하여 측정 온도범위 상온${\sim}150[^{\circ}C]$ 와 인가전압 범위 1[V]${\sim}$20[V]에서 유전정접의 주파수 의존성과 온도 의존특성을 조사하고 특히 정전용량 변화에 따른 유전특성에 대하여 조사하고 변환기 소자재료 개발을 위한 기초물성을 실험한 결과를 보고한다.

• Journal of the Korean Society of Safety
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• v.20 no.3 s.71
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• pp.42-46
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• 2005

The static electricity by thinner flow and discharge energy is investigated experimentally for the purpose of preventing the electrostatic discharge and damage. Test system for evaluating streaming electrification consists of a teflon pipe, a reservoir tank a pump, flowmeters and an electrometer. When dielectric liquid flows through a pipe from one vessel to another, the potential difference generated in the collecting vessel is due to the accumulation of charges. These charges result from the convection of a part of the electrical double layer existing in the tube at the contact between the liquid and the inner wall. When the fluid velocity increases, the electric current increases proportionally. The charging current and accumulated charges by streaming electrification at the thinner velocity of 40cm/s are measured a range of 5 nA and $0.27{\mu}C$ respectively. This amount of static discharge energy generated by streaming electrification is enough to ignite flammable solvent. Therefore surface electric potential should decrease by using electrostatic shielding and ground.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.139-142
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• 2007

Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a $SiO_2$ as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.57-60
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• 2002

In this paper, transmission lines with low and high characteristic impedance (Z$_{0}$) are fabricated and analyzed. The transmission lines are fabricated on the benzo-cyclo-butene (BCB) films of a low dielectric constant. For the low Z$_{0}$, two types of coplanar waveguide (CPW) structures are fabricated, which include bottom-ground and double-ground type. Measurement shows that Z$_{0}$ values for each CPW type are 7.3 and 9.4$\Omega$, respectively, at a signal line width of 100 #m. Whit the ratio between the spacing of bottom-ground and the signal line with becomes greater than 2.5, the Z$_{0}$ is nearly saturated. In addition, thin film microstrip lines fabricated using the BCB insertion layers show very low Z$_{0}$ of 25.5$\Omega$, and this impedance is ~64 % of the values obtained from the BCB-based CPW structures of the same line width. Measurement result of CPW on BCB layer is 100.5 Ω.s 100.5 Ω.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.53-58
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• 2008

In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.41-48
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• 2018

The quantitative interfacial adhesion energy measurement method of copper redistribution layer and WPR dielectric interface were investigated using $90^{\circ}$ peel test, 4-point bending test, double cantilever beam (DCB) measurement for FOWLP Applications. Measured interfacial adhesion energy values of all three methods were higher than $5J/m^2$, which is considered as a minimum criterion for reliable Cu/low-k integration with CMP processes without delamination. Measured energy values increase with increasing phase angle, that is, in order of DCB, 4-point bending test, and $90^{\circ}$ peel test due to increasing roughness-related shielding and plastic energy dissipation effects, which match well interfacial fracture mechanics theory. Considering adhesion specimen preparation process, phase angle, measurement accuracy and bonding energy levels, both DCB and 4-point bending test methods are recommended for quantitative adhesion energy measurement of RDL interface depending on the real application situations.

• International Journal of Aeronautical and Space Sciences
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• v.17 no.1
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• pp.20-28
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• 2016

In this study, an efficient method of designing laminate composite radar absorbing structures (RAS) is proposed with consideration given to the structural shape so as to improve aircraft stealth performance. The calculation of the radar cross section (RCS) should be decreased to enhance the efficiency of the stochastic optimization when designing an RAS. In the proposed method, RAS are optimized to match up the input impedance of the minimal RCS, which is obtained by using physical optics and the transmission line theory. Single and double layer dielectric RAS for aircraft wings are employed as numerical examples and designed using the proposed method, RCS minimization and reflection coefficient minimization. The availability of the proposed method is assessed by comparing the similarity of the results and computation time with other design methods. According to the results, the proposed method produces the same results as the stochastic optimization, which adopts the RCS as the objective function, and can improve RAS design efficiency by reducing the number of RCS analyses.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.5-12
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• 1997

Charged carbon clusters which are formed by the gas activation are suggested to be responsible for the formation of the metastable diamond film. The number of carbon atoms in the cluster that can reverse the stability between diamond and graphite by the capillary effect increases sensitively with increasing the surface energy ratio of graphite to diamond. The gas activation process produces charges such as electrons and ions, which are energetically the strong heterogeneous nucleation sites for the supersaturated carbon vapor, leading to the formation of the charged clusters. Once the carbon clusters are charged, the surface energy of diamond can be reduced by the electrical double layer while that of graphite cannot because diamond is dielectric and graphite is conducting. The unusual phenomena observed in the chemical vapor deposition diamond process can be successfully approached by the charged cluster model. These phenomena include the diamond deposition with the simultaneous graphite etching, which is known as the thermodynamic paradox and the preferential formation of diamond on the convex edge, which is against the well-established concept of the heterogeneous nucleation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.394-398
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• 2014

We fabricated the electrolyte-dielectric-metal (EDM) sensor on the base of AAO (anodic aluminum oxide) template with variation of the anodizing temperature. When a surface is immersed or created in an aqueous solution, a discontinuity is formed at the interface where such physicochemical variables as electrical potential and electrolyte concentration change significantly from the aqueous phase to another phase. Because of the different chemical potentials between the two phases, charge separation often occurs at the interfacial region [1]. This interfacial region, togeter with the charged surface, is usually known as the electrical double layer (EDL) [2]. The structural and electrochemical properties of AAO sensor were investigated for applications in capacitive pH sensors. To change the thickness of the AAO template, the anodizing temperature was varied from $5^{\circ}C$ to $20^{\circ}C$, the thickness of the AAO template invreased from 300 nm to 477 nm. The pH sensitivity of sensors with the anodizing temperature of $20^{\circ}C$ showed the highest value of 56.4 mV/pH in the pH range of 3 to 11. The EDM sensor with the anodizing temperature of $20^{\circ}C$ exhibited the best long-term stability of 0.037 mV/h.