• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.4
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• pp.153-158
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• 2016

In this paper, TE(transverse electric) scattering problems by a conductive strip grating between grounded double dielectric layer are analyzed by applying the PMM(point matching method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, the scattered electromagnetic fields are expanded in a series of Floquet mode functions, and the conductive boundary condition is applied to analysis of the conductive strip. The numerical results for normalized reflected power are analyzed by according as the width and spacing of conductive strip, the relative permittivity and thickness of the double dielectric layers, and incident angles. The most normalized reflected powers of the sharp variations in minimum values are scattered in direction of the other angles except incident angle. The numerical results for the presented structure of this paper having a grounded double dielectric layer are shown in good agreement compared to those of the existing papers.

• The Journal of the Convergence on Culture Technology
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• v.9 no.3
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• pp.619-624
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• 2023

In this paper, TE(transverse electric) scattering problems by a resistive strip grating between a double dielectric layer are analyzed by using the FGMM(fourier galerkin moment method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, the scattered electromagnetic fields are expanded in a series of Floquet mode functions, and the resistive boundary condition is applied to analysis of the resistive strip. In order to deal with the problem of the double dielectric layer, numerical calculation was performed only when the thickness and relative permittivity of the dielectric layers had the same value. Overall, as the resistivity of the uniform resistivity increased, the current density induced in the resistive strip decreased, the reflected power decreased, and the transmitted power relatively increased. The numerical results of the structure proposed in this paper are shown in good agreement compared to the results of PMM, a numerical analysis method of the existing paper.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.2
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• pp.47-52
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• 2019

In this paper, TE(transverse electric) scattering problems by a conductive strip grating between a double dielectric layer are analyzed by applying the FGMM(Fourier-Galerkin moment method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, and the conductive boundary condition is applied to analysis of the conductive strip. The numerical results for the normalized reflected and transmitted power are analyzed by according as the width and spacing of conductive strip, the relative permittivity and thickness of the double dielectric layers, and incident angles. Generally, as the value of the dielectric constant increases, the reflected power increases and the transmitted power decreases, respectively. As the dielectric constant increases, the current density induced in the strip increases as it goes to both strip ends. The numerical results for the presented structure of this paper are shown in good agreement compared to those of the existing papers.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.252-255
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• 2013

Nano MOS with $Er_2O_3/SiO_2$ double-layer gate dielectrics was demonstrated by EDISON Nanophysics software. Double-layer structure decreases the gate leakage current in two orders compared with $SiO_2$ single-layer gate dielectric.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.3
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• pp.77-82
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• 2023

In this paper, TM(tranverse magnetic) electromagnetic scattering problems for resitive strip grating between grounded double dielectric layers are analyzed by using the FGMM(fourier galerkin moment method) and PMM(point matching method) known as a numerical method of electromagnetic field. The boundary conditions are applied to obtain the unknown field coefficients, the resistive boundary condition is applied to analysis of resistive strip. Overall, when the unoform resistivity decreased, the magnitude of the current density induced in the resistive strip increased, and the reflected power also increased. Also, as the thickness and relative permittivity of the double dielectric layers increased, the overall reflected power increased. The numerical results obtained by using the numerical methods of FGMM and PMM to the structure proposed in this paper agree very well.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.4
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• pp.21-26
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• 2019

In this paper, TE(transverse electric) scattering problems by a resistive strip grating between a double dielectric layer are analyzed by using the PMM(point matching method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, the scattered electromagnetic fields are expanded in a series of Floquet mode functions, and the resistive boundary condition is applied to analysis of the resistive strip. The numerical results for the normalized reflected and transmitted power are analyzed by according as the width and spacing of resistive strip, the relative permittivity and thickness of the double dielectric layers, incident angles, and uniform resisitivity. Typically, the reflected power for the conductive strip increased as the value of the relative dielectric constant increased, the reflected power for the resistive strip with uniform resistivity decreased as the value of the resisvivity increased. The numerical results for the presented structure of this paper are shown in good agreement compared to those of the existing papers.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.3
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• pp.71-76
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• 2023

In this paper, TE(transverse electric) scattering problems by a resistive strip grating between a grounded double dielectric layer are analyzed by applying the FGMM(fourier galerkin moment method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, the scattered electromagnetic fields are expanded in a series of Floquet mode functions, and the resistive boundary condition is applied to analysis of the resistive strip. Overall, as the resistivity decreased, the magnitude of the current density induced in the resistive strip increased, and the reflected power also increased. In case of uniform resistivity, the reflected power decreased as the relative permittivity of the dielectric layers increased or the thickness of the dielectric layer increased. The numerical results for the presented structure in this paper are shown in good agreement compared to those of the existing papers.

• Agricultural and Biosystems Engineering
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• v.1 no.1
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• pp.30-37
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• 2000

Wet porous media representing agronomic soil that contains variable water content with variable electrolyte concentration was measured to study the shape of the curves of the electric double layer capacitance versus frequency (from 10 KHz to 10 MHz. This was done in an attempt to find the lowest practical operating frequency for developing low cost dielectric constant soil moisture probes. Cellulose sponge was used as the porous media. A high frequency electronic bridge circuit was developed for measuring the equivalent network parallel resistance and capacitance of porous media. It appears that the effects of the electric double layer component of the total parallel network capacitance essentially disappear at operating frequencies greater than approximately 25 MHz at low electrolyte concentrations but are still important at 50 MHz at higher concentrations. At these frequencies, the double layer capacitance masks the diffusion region capacitance where true water content capacitance values reside. The general shape of the curve of volumetric water content versus porous media dielectric constant is presented, with an empirical equation representing data for this type of curve. It was concluded that the lowest frequency where dielectric constant values which represent true water content information will most likely be found is between 30 and 50 MHz at low electrolyte concentrations but may be above 50 MHz when the total electrolyte concentration is near the upper level required for most mesophyte plant nutrition.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.789-790
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• 2013

$Er_2O_3/SiO_2$ double-layer gate dielectric shows low gate leakage current and high capacitance. In this paper, we apply $Er_2O_3/SiO_2$ double-layer gate dielectric as a charge trap layer for the first time. $Er_2O_3/SiO_2$ double-layer thickness is optimized by EDISON Nanophysics simulation tools. Using the simulation results, we fabricated Schottky-barrier silicide source/drain transistor, which has10 um/10um gate length and width, respectively. The nonvolatile device demonstrated very promising characterstics with P/E voltage of 11 V/-11 V, P/E speed of 50 ms/500 ms, data retention of ten years, and endurance of $10^4$ P/E cycles.