• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.6
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• pp.1069-1074
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• 2022

In this study, we prepared ITO thin films on the Nb₂O₅/SiO₂ double buffer layer and investigated electrical and optical properties according to the change of SiO₂ buffer layer thickness (40~50nm). The ITO thin film fabricated on the Nb₂O₅/SiO₂ double buffer layer exhibited a broad surface roughness with a small value ranging of 0.815 to 1.181nm, and the sheet resistance was 99.3 to 134.0Ω/sq. It seems that there is no problem in applying the ITO thin film to a capacitive touch screen panel. In particular, the average transmittance in the short-wavelength (400~500nm) region and the chromaticity (b^*) of the ITO thin film deposited on the Nb₂O₅(10nm)/SiO₂(40nm) double buffer layer showed significantly improved results as 83.58% and 0.05, respectively, compared to 74.46% and 4.28 of ITO thin film without double buffer layer. As a result, it was confirmed that optical properties such as transmittance in the short-wavelength region and chromaticity were remarkably improved due to the index matching effect in the ITO thin film with the Nb₂O₅/SiO₂ double buffer layer.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.260-263
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• 2011

GZO/ITO double layered films were deposited on unheated non-alkali glass substrates by RF magnetron sputtering using an ITO ($SnO_2$: 10 wt%) and GZO($Ga_2O_3$: 5.57 wt%) ceramic targets, respectively. The electrical resistivity of GZO/ITO films depends on the thickness ratio between the GZO film and ITO film. With increasing ITO film thickness, the resistivity of GZO/ITO films decreased which due to large increase in the Hall mobility. Also, the crystallinity of GZO/ITO film was improved with an increase in ITO thickness which was evaluated by X-ray diffraction. The average transmittance of the films was more than 85% in the visible region, which is slightly higher than ITO single layer films.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.588-591
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• 2004

Polyazomethine type conjugated copolymers containing phenanthridine units, poly(PZ-PTI), were synthesized by Schiff-base reaction. This new conjugated copolymer exhibited improved solubility in common organic solvents due to the presence of alkyl side chains as well as phenanthridine groups. Double layer (ITO/poly(PZ-PTI)/$Alq_3$/Mg) light emitting diode (LED) exhibited enhanced EL emission and efficiency compared to that of single layer (ITO/poly(PZ-PTI)/Mg) LED. With increasing the thickness of $Alq_3$ layer in double layer (ITO/poly(PZ-PTI)/$Alq_3$/Mg) LED the emission peak gradually shifted to the single layer (ITO/$Alq_3$/Mg) LED, confirming good hole transporting behaviour of the synthesized conjugated copolymer.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.233-239
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• 2002

Reflection properties of $SiO_2$/ITO (Indium Tin Oxide) thin films coated for electromagnetic shielding, anti-static and anti-reflection on the front surface in CRT were studied. The behavior of reflectance as a function of thickness of $SiO_2$/ITO was investigated and applied to theoretical anti0reflection model of double layers and three layers. As the thickness of ITO layer increased, the deviation from theoretical value increased because uniformity of film deteriorated by pore. Because of the effect of mixed layer of $SiO_2$ and ITO, experimental reflectance showed better acceptance to the three layer antireflection model of $SiO_2$/$SiO_2$+ITO/ITO than the two layer model. Based on the theoretical antireflection design, the double layer whose thickness of $SiO_2$ and ITO were 90, 65 nm, respectively appear 2.5% in reflectance at standard wavelength, 550 nm. This phenomenon was similar to theoretical reflectance in visual range.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.97-102
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• 1998

Organic thin film EL devices using PPV(poly (p-phenylenevinylene)) as emitter were fabricated on various conditions and structures, their electro-optical properties were estimated. Fabricated EL devices had structures of single layer(ITO(indium tin oxide)/PPV/Mg), double layer(ITO/PVK(poly(N-vinylcarbazole))/PPV/Mg and ITO/PPV/Polymer matrix + PBD/Mg) and three layer (ITO/PVK/PPV/PS(polystyrene)+PBD(butyl-2-(4-bipheny])-5-(4-tert-butylphenyl-1,3,4-oxadiazole))/Mg), their electro-optical characteristics were compared with each other. In structure of double layer (ITO/PPV /Polymer matrix + PBD/Mg), the used polymer-matrices were PMMA(poly(methyl methacrylate), PC(polycarbonate), PS and MCH(side chain liquid crystalline homopolymer). When PS as a hole transport layer was used, the luminance characteristics on concentration of PBD was obtained. In results, current-voltage-luminance curves of fabricated devices had characteristics of tunneling effect and the device showed a stable light emitting.

• Bulletin of the Korean Chemical Society
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• v.19 no.3
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• pp.332-335
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• 1998

An alternating copolymer of PPV and PTV, poly[2-methoxy-5-(3,7-dimethyl)octyloxy-1,4-phenylenevinylene-alt-2,5-thienylenevinylene] (DAPPV-PTV) has been synthesized and light-emitting properties of the polymer have been studied. A single layer EL device using DAPPV-PTV as an emitting layer between ITO and Al electrodes (ITO/DAPPV-PTV/Al) has been fabricated, and light emission of the device becomes visible at 3 V. The EL emission maximum of the device is about 620 nm. Double layer EL device using DAPPV-PTV and Alq3 (ITO/DAPPV-PTV/Alq3/Al) has also been fabricated. The double layer EL device shows two-color emission depending on the applied voltage. The device emits a pale green color from 8 V, and then the color turns to red at about 18 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.85-89
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• 2018

In this study, functional transparent conducting layers were investigated for Si-based photoelectric applications. Double transparent conductive oxide (TCO) films were deposited on a Si substrate in the sequence of indium tin oxide (ITO) followed by aluminum-doped zinc oxide (AZO). First, we observed that the conductivity and transparency of AZO dominate the overall performance of the double TCO layers. Secondly, the double layered TCO film (consisting of AZO/ITO) deposited by sputtering was compared to a AZO-only film in terms of their optical and electrical properties. We prepared three different AZO films: ITO:3min/AZO:10min, ITO:5min/AZO:7min, and ITO:7min/AZO:4min. The results show that the optical properties (transmittance, absorbance, and reflection) can be controlled by the film composition. This may provide a significant pathway for the manipulation of the optical and electrical properties of photoelectric devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.377-380
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• 2012

Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:$YVO_4$ (${\lambda}$= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.5
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• pp.986-991
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• 2016

In this study, we prepared ITO thin films on $Nb_2O_5/SiO_2$ double buffer layer using DC magnetron sputtering method and investigated electrical and optical properties with various substrate temperatures (room temperature ~ $400^{\circ}C$). The resistivity showed a decreasing tendency, because crystallinity has been improved due to the enlarged grain size with increasing substrate temperature. ITO thin film deposited at $400^{\circ}C$ showed the most excellent value of resistivity and sheet resistance as $3.03{\times}10^{-4}{\Omega}{\cdot}cm$, $86.6{\Omega}/sq.$, respectively. In results of optical properties, average transmittance was increased but chromaticity ($b^*$) was decreased in visible light region (400~800nm) with increasing substrate temperature. Average transmittance and chromaticity ($b^*$) of ITO thin film deposited at $400^{\circ}C$ exhibited significantly improved results as 85.8% and 2.13 compared to 82.8% and 4.56 of the ITO thin film without buffer layer. Finally, we found that ITO thin film introduced $Nb_2O_5/SiO_2$ double buffer layer has a remarkably improved optical property such as transmittance and chromaticity due to the index matching effect.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.6
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• pp.279-283
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• 2012

In is paper, we design and implement the low power, high speed touch screen controller that calculates and outputs the coordinate of touch point on the touch screen of mobile devices. The system clock is 10HMz, the number of input channels is 21, standby current is $20{\mu}A$, dynamic range of input is 140pF~400pF and the response time is 0.1ms/frame. It contains the power management unit for low power, automatic impedance calibration unit in order to adapt to humidity, temperature and evaluation board, adjacent key and pattern interference suppression unit, serial interface unit of I2C and SPI. The function and performance is verified by using FPGA and $0.18{\mu}m$ CMOS standard process. The implemented touch screen is designed for using in the double layer ITO(Indium Thin Oxide) module with diamond pattern and single layer ITO module for cost-effective which are applied to mobile phone or smart remote controller.