• Journal of the Korean Society of Propulsion Engineers
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• v.14 no.6
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• pp.60-68
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• 2010

In this study, the conventional plane tip, double squealer tip, and various groove tip blades were tested in a linear cascade in order to measure the effect of the tip shapes on tip surface heat transfer coefficient distributions. Detailed heat transfer coefficient distributions were measured using a hue-detection based transient liquid crystals technique. Two tip gap clearances of 1.5% and 2.3% of blade span were investigated and the Reynolds number based on cascade exit velocity and chord length was $2.48{\times}10^5$. Results showed that the overall heat transfer coefficients on the tip surface with various grooved tips were lower than those with plane tip blade. The overall heat transfer coefficient on grooved along suction side tip was lower than that on the squealer tip.

• Journal of The Korean Society of Agricultural Engineers
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• v.52 no.2
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• pp.67-73
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• 2010

Unlike Urban building, horticultural facilities has a lot of heat loss through plastic or glass covering material which could be much influential to growing plant and consuming energy for heating greenhouse. In many cases, heat loss from a break of cover, a gap of joint sealing, the entrance to greenhouse and windows for ventilation are the main factors considered in calculating the heating load for horticultural facilities. however the normal observation through human eye and digital camera could not recognize where the heat loss occurred. but the infrared thermal image camera with detecting thermal difference could be very effective for noticing heat loss by analyzing infrared thermal image. In this study, greenhouse structure, covering material, internal and external provisions for Horticultural facilities were surveyed in different sites and Infrared thermal camera shooting and image analysis were performed for auditing heat loss from cultivation facilities The results from this study were that unexpected heat loss had been noticed in 7 representative cases of greenhouse such as side wall covered with single or double plastic, and the joint of horizontal thermal curtain, roof without horizontal thermal curtain, entrance to greenhouse, windows for ventilation. the most important factors for keeping heat energy were whether the horizontal thermal curtain with multifold thermal material was installed or not. The internal or external covering using multifold thermal curtain proved to be the most effective ways to keep heat energy from losing through heat transmission, heat radiation. from inside to outside the horticultural facilities.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.220-228
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• 1996

CdTe single crystals were grown by vertical Bridgman method using double furnace with two siliconit heating elements. When the peak temperature of the upper furnace was fixed at $1150^{\circ}C$ and that of the lower furnace was $800^{\circ}C$, the temperature gradient was about $22.5^{\circ}C$/cm. The lattice constant $a_0$ was $6.482\AA$ from the X-ray diffraction and the band gap energy obtained from the optical absorption experiment at room temperature was 1.478 eV. PL spectrum showed that the bound exciton emission peak was resolved into ($A^0,X$) (1.5902, 1.5887 eV), ($h\;D^0$) (1.5918 eV) and ($D^0,X$ (1.5928, 1.5932 eV), and we have also calculated binding energy and ionization energy of the neutral donor and acceptor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Composites Research
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• v.29 no.4
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• pp.179-185
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• 2016

A self-charging supercapacitor is constructed through simple integration of the energy storage and photo exited materials at the photo electrode. The large band gap of $NiO/Fe_3O_4$ heterostructure generates photo electron at the photo electrode and store the charges through redox mechanism at the counter electrode. Sulfanilic acid azocromotrop/reduced graphene oxide layer at the photo electrode trapped the photo generated hole and store the charge by forming double layer. The solar supercapacitor device is charged within 400 s up to 0.5 V and exhibited a high specific capacitance of ~908 F/g against 1.5 A/g load. The solar illuminated supercapacitor shows a high energy and power density of 33.4 Wh/kg and 385 W/kg along with a very low relaxation time of ~15 ms ensuring the utility of the self charging device in the various field of energy storage and optoelectronic application.

• Korean Journal of Agricultural Science
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• v.10 no.2
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• pp.371-381
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• 1983

This study is aimed at identifying the economic effects of drainage improvement projects. The total area of poor drainage is equivalent to 170,000ha, 13% of the total area of paddy field in Korea. The development of poor drained paddy is an urgent problem considering the low rate of self-sufficiency of food grain and the limitation of farmer's income increase. Rapid development of Korean economy has brought labor shoriage in rural farming sector. Accordingly farm mechanization is an important agricultural policy to hike labor productivity and to save production costs of rice farming. The expected economic benefits of the drainage improvement project are derived from increasing land productivity, expanding double cropped area and farming the farm mechanization base in paddy fields. The economic and financial rate of return of the project are considered very important decision making criteria for project implementation by resource allocation. Therefore this study covered benefit and cost analysis of the sampled area, the estimated financial rate of returns in $Buy{\check{o}}$ and Jinsung are represented 15% and 51% respectively and the economic rate of returns in both project area are also showing 1% and 26% respectively. The rate of return of the projects has showed an outstanding variance according to the locational and natural characteristics of the project area. As showing the above economic rate of return, $Buy{\check{o}}$ is very low Jinsung is very high. But the financial rate of return of both projects are considered comparatively high. Cosequently, the drainage improvement projects should be promoted from the view point of farm income increase to make narrow the income gap between rural and urban incomes and farm mechanization to solve labor shortage in the rural area.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.12
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• pp.11-20
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• 1999

We have designed and fabricated direct-and gap-coupled microstrip hairpin-comb filters by patterning double-sided YBCO films on a single 50-mm-diameter, 0.5-mm-thick $LaAlO_3$ wafer. Both filters have a center frequency at 1.773 GHz, 12 MHz bandwidth, 0.5 dB minimum insertion loss in the passband, and very strong out-of- band rejection. Due to two attenuation poles below and above the passband, the direct-coupled hairpin-comb filter showed a better skirt characteristic than the gapcoupled hairpin-comb filter which had only one attenuation pole below the passband.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.173-180
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• 1999

Thermally evaporated ZnTe films were investigated as a back contact material for CdS/CdTe solar cells. Two deposition methods, coevaporation and double-layer methods, were used for Cu doping in ZnTe films. ZnTe layers (0.2$\mu\textrm{m}$ thick) were deposited either on glass or on CdS/CdTe substrates without intentional heating of the substrates. Post-deposition annealing was performed at 200,300 and $400^{\circ}C$ for 3,6 and 9 minutes, respectively. Band gap of 2.2eV was measured for both undoped and doped films and a slight change in the shape of absorption spectra was observed in Cu-doped samples after annealing at $400^{\circ}C$. The resistivity of as-deposited ZnTe decreased from 10\ulcorner~10\ulcornerΩcm down to 10\ulcornerΩcm as Cu concentration increased from 0 to 14 at.%. There was not a noticeable change in less of annealing temperature up to $300^{\circ}C$ whereas films annealed at $400^{\circ}C$ revealed hexagonal (101) orientations as well. Some of Cu-doped ZnTe revealed x-ray diffraction (XRD) peaks related with Cu\ulcornerTe(x=1.75~2). Grain growth was observed from about 20nm in as-deposited films to 50nm after annealing at $400^{\circ}C$ by scanning electron microscopy (SEM). Cu distribution in ZnTe films was not uniform according to Auger electron spectroscopy (AES) measurements.