• 한국세라믹학회지
• /
• 제51권4호
• /
• pp.260-264
• /
• 2014

We developed a novel double dopant bismuth oxide system with Tb and W. When Tb was doped as a single dopant, a Tb dopant concentration more than 20 mol% was required to stabilize bismuth oxides with a high conductivity cubic structure. High temperature XRD analysis of 25 mol% Tb-doped bismuth oxide (25TSB) confirmed that the cubic structure of 25TSB was retained from room temperature to $700^{\circ}C$ with increase in the lattice parameter. On the other hand, we achieved the stabilization of high temperature cubic phase with a total dopant concentration as low as ~12 mol% with 8 mol% Tb and 4 mol% W double dopants (8T4WSB). Moreover, the measured ionic conductivity of 10T5WSB was much higher than 25TSB, thus demonstrating the feasibility of the double dopant strategy to develop stabilized bismuth oxide systems with higher oxygen ion conductivity for the application of SOFC electrolytes at reduced temperature. In addition, we investigated the long-term stability of TSB and TWSB electrolytes.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.351-352
• /
• 2008

A new high efficient red PhOLED using a host of $Bebq_2$ and double dopants of $(pq)_2$Ir(acac) and SEC-R411 have been fabricated and evaluated. The device doubly doped with $(pq)_2$Ir(acac) and SFC-R411 showed the current efficiency improvement of 22% under a luminance of 10000 cd/$m^2$ in comparision with the device singly doped with SFC-R411. The luminance, current efficiency and central wavelength of the doubly doped device were 9300 cd/$m^2$ at 7V, 11.1 cd/A under a luminance of 10000 cd/$m^2$ and 625 nm, respectively.

• 한국재료학회지
• /
• 제30권12호
• /
• pp.666-671
• /
• 2020

The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

• 접착 및 계면
• /
• 제3권3호
• /
• pp.22-29
• /
• 2002

하층에 유 무기 전도성 물질을 코팅하고 상층은 다관능성 아크릴레이트를 코팅한 다층코팅의 자외선 경화형 시스템을 도입하였다. 이러한 다층코팅은 투명한 PMMA, PC, PET 등의 기재 위에 wet and wet 방식의 코팅 방법을 사용하여 제조하였다. 도막의 표면저항과 물성은 상층 두께의 변화와 상대 습도를 다르게 하여 측정하였다. 상층두께가 $10{\mu}m$ 이하일 때 $10^8{\sim}10^{10}{\Omega}/cm^2$의 표면저항을 나타냈으며 표면 물성은 단층코팅에 비해서 다층코팅이 더 우수하게 나타났다. 그리고 다층코팅에서의 도판트 이동효과는 접촉각과 FT-IR/ATR을 통해 관찰하였다. 하층이 무기 전도성 물질인 경우에는 관찰되지 않는 도판트(DBSA)의 필름-기재 계면에서 필름-공기 계면 쪽으로 이행되는 거동이 유기전도성 물질인 경우에는 관찰되었다.

• 한국전기전자재료학회논문지
• /
• 제23권11호
• /
• pp.854-858
• /
• 2010

In this study, we have investigated the effects of Cr dopant on the sintering and electrical properties of ZnO-$Sb_2O_3$ (ZS) ceramics for varistor application. Spinel phases including $\alpha-$ and $\beta$-type was formed at ZS system and $\alpha$-spinel was stabilized by Cr doping in ZS system. Densification of ZS and ZSCr system was retarded to $1000^{\circ}C$ by the formation of spinel at $800^{\circ}C$. The morphology and its distribution of spinel phases in ZS system was homogeneous but disturbed by Cr doping. In ZSCr the densification of ZnO compared with ZS system was more retarded by low concentration of Zn interstitial defects induced by Cr doping in addition to the effect of spinel phase formation. The defects in each system were identified as attractive coulombic center (ZS: 0.13 eV, ZSCr: 0.12 eV) and singly charged oxygen vacancy $V_0^{\cdot}$ (ZSCr: 0.33 eV). In all ZS and ZSCr system have week varistor behavior by the formation of double Schottky barrier at grain boundary but its stability of barrier was very sensitive to sintering temperature.

• 한국전기전자재료학회논문지
• /
• 제23권5호
• /
• pp.368-373
• /
• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.