• 한국초전도ㆍ저온공학회논문지
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• 제20권3호
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• pp.1-4
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• 2018

The effect of sulfate substitution on the formation of (Pb,S)-1201 type phase was investigated. Polycrystalline samples with nominal compositions of $(Pb_{0.5}B_{0.5-x}S_x)(Sr_{2-y}La_y)CuO_z$, (x = 0 - 0.5, y = 0.7 - 1.0) and $(Pb_{0.5}S_{0.5})(Sr_{2-y}La_y)CuO_z$ (y = 0.5 - 1.0) were prepared by using a solid-state reaction method. The samples were characterized by powder X-ray diffraction (XRD) and resistivity measurements. XRD data revealed that almost-single (Pb,S)-1201 phase samples could be obtained for x = 0.5 and y = 0.9-1.0, judging from the similar results of the XRD patterns between the (Pb,S)-1201 and (Pb,B)-1201 phases. Each of the samples has a crystal structure with tetragonal symmetry. The sample with x = 0.5 and y = 0.9 is found to show an onset of resistivity dropping at over 23 K and zero resistivity at 12 K.

• 한국재료학회지
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• 제15권12호
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• pp.756-759
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• 2005

A lead free piezoelectric material, bismuth sodium barium titanate $(Bi_{0.5}Na_{0.5})_{0.94}Ba_{0.06}TiO_3$ (BNBT), was considered as an environment-friendly alternatives for the current PZT system. A perovskite BNBT was synthesized by conventional bulk ceramic processing technique. In order to improve piezoelectric properties, $La_2O_3$ as a dopant was incorporated into the BNBT system up to 0.025 moi, ana the effects on subsequent the piezoelectric ana dielectric properties were systematically investigated. With increasing $La_2O_3$ contents, the equilibrium grain shape was remarkably evidenced and sintered density was increased. Piezoelectric and dielectric properties were s]town to have maximum values at the $La_2O_3$ contents of 0.02 mol. $La^{3+}$ ions seemed to act as a softener in the BNBT system and to enhance dielectric and piezoelectric properties in this study.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권3호
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• pp.166-173
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• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.

• Journal of Electrochemical Science and Technology
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• 제11권4호
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• pp.336-345
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• 2020

Nickel-doped lanthanum cobalt oxide (LaCo_1-xNi_xO_3-δ, LCN) was investigated as an alternative anode material for solid oxide fuel cells. To improve its catalytic activity for steam methane reforming (SMR) reaction, Ni²⁺ was substituted into Co³⁺ lattice in LaCoO₃. LCN anode, synthesized using the Pechini method, reacts with yttria-stabilized zirconia (YSZ) electrolyte at high temperatures to form an electrochemically inactive phase such as La₂Zr₂O₇. To minimize the interlayer by-products, the LCN was coated via a double-tape casting method on the Ni/YSZ anode as a catalytic functional layer. By increasing the Ni doping amount, oxygen vacancies in the LCN increased and the cell performance improved. CH₄ fuel decomposed to H₂ and CO via SMR reaction in the LCN functional layer. Hence, the LCN-coated Ni/YSZ anode exhibited better cell performance than the Ni/YSZ anode under H₂ and CH₄ fuels. LCN with 12 mol% of Ni (LCN12)-modified Ni/YSZ anode showed excellent long-term stability under H₂ and CH₄ conditions.

• Bulletin of the Korean Chemical Society
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• 제21권10호
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• pp.1041-1043
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• 2000

We present the effects of temperature (between 10 K and 298 K) and of hole concentration on the frequency and intensity of characteristic phonons in polycrystalline $La_2CuO_4-related$ compounds using FT-IR spectros-copy. The influences of the concentration of carrier doped on the phonon modes are prominent in the IR spectra of $La_2CuO_4-related$ compounds. For $La_2-xSrxCuO_4({\chi}=$ 0.00, 0.03, 0.07, 0.10, and 0.15) and electrochemically (or chemically) oxidized $La_2CuO_4$, the intensities of the transverse oxygen mode around 680cm $-^1$ which cor-responds mainly to Cu-O(1) stretching vibration in the basal plane of CuO6 octahedron, are decreased and dis-appeared depending on the Sr-substitution rate and the amount of excess oxygen, while the longitudinal oxygen mode around 510 cm $-^1$ corresponding to the Cu-O(2) stretching in the basal plane of CuO6 octahedron are near-ly invariable. In particular, after two cycles of cooling-heating between 10 K and 298 K for these sample, the phonons around 680 cm $-^1$ are blue shif 13-15 cm $-^1$, while the phonons around 510 cm $-^1$ are nearly constant. The introduction of the charge carrier by doping would give rise to the small contraction of CuO6 oc-tahedron as Cu $^3+$ requires a smaller site than Cu $^2+$, which results in the shortening of the Cu-O(1) bond length and Cu-O(2) bond length with the increased La-O(2) bond length. These results in the frequency shift of the characteristic phonons. The IR spectra of $La_2Li0.5Cu0.5O_4$ which exhibits an insulator behavior despite the $Cu^3+$ of nearly 100%, corroborate our IR interpretations. The mode around 710 cm $-^1$ corresponding to Cu-O(1) stretching vibration is still strongly remained even at low temperature (10 K). Thus, we conclude that the con-duction electrons formed within $CuO_2$ planes of $La_2CuO_4-related$ superconductors screen more effectively the transverse oxygen breathing mode around 680 $cm-^1$ depending on the concentration of the doped charge carrier in $La_2CuO_4-related$ compounds, which might use as a superconductivity probe.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.80.1-80.1
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• 2010

A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.

• Advances in nano research
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• 제3권2호
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• pp.81-96
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• 2015

Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of $In_2O_3$ structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of $In_2O_3$ nano-/microcrystals. The single crystalline Ga-doped, $In_2O_3$ nano-/microcrystals with low defect contents are promising for optoelectronic applications.

• 한국재료학회지
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• 제7권3호
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• pp.196-202
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• 1997

PLT 박막의 증착방법으로 ECR PECVD법을 이용한 경우 $440~500^{\circ}C$의 비교적 낮은 온도에서 순수한 perovskite구조를 가진$(Pb,La)TiO_{3}$박막을 성공적으로 제조하였다. 기판온도 증가에 따라 반응기체 및 산화물(특히 Pb oxkde)의 휘발성이 증대되어 증착속도가 감소하고 (Pb oxide)의 휘발성이 증대되어 증착속도가 감소하고 (Pb+La)/Ti조성비가 감소하였다. $460~480^{\circ}C$의 온도범위에서 증착한 PLT 박막이 화학양론비를 가장 잘 만족하였으며 이때 높은 유전상수와 가장 우수한 누설전류 특성을 나타내었다. $La(DPM)_{3}$ 유입량 증가에 따라 $(Pb, La)TiO_{3}$ 박막의 La 조성이 거의 직선적으로 비례하여 증가하였는데 La/Ti비가 3.0%에서 9.5%까지 증가함에 따라 PLT 박막의 유전 상수는 360부터 650까지 증가하였고 100kV/cm 전기장하에서의 누설전류도 $4{\times}10^{-5}$에서 $4{\times}10_{-8}A/cm^2$로 향상되었다.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1535-1540
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• 2018

In this study, we prepared and characterized Nb-doped $Li_7La_3Zr_{2-x}O_{12}$ (LLZNO) powder and pellets with a cubic garnet structure by using a modified sol-gel synthesis and hot pressing. LLZNO powder with a very small grain size and cubic structure without secondary phases could be obtained by using a synthesis method in which Li and La sources in a propanol solvent were mixed together with Zr and Nb sources in 2-methoxy ethanol. A pure cubic phase LLZNO pellet could be fabricated from the prepared LLZNO and an additional 6-wt% of $Li_2CO_3$ powder by hot pressing at $1050^{\circ}C$ and 15.8 MPa. The hot-pressed LLZNO pellet with a relative density of 99% exhibited a very dense surface morphology. The total Li ionic conductivity of the hot-pressed LLZNO was $7.4{\times}10^{-4}S/cm$ at room temperature, which is very high level compared to other reported values. The activation energy for ionic conduction was estimated to be 0.40 eV.

• 한국재료학회지
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• 제24권11호
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• pp.599-603
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• 2014

$NaLa_{1-x}(MoO_4)_2:Eu^{3+}/Yb^3$ phosphors with doping concentrations of $Eu^{3+}$ and $Yb^{3+}$ ($x= Eu^{3+}+Yb^{3+}$, $Eu^{3+}=0.05$, 0.1, 0.2 and $Yb^{3+}= 0.2$, 0.45) were successfully synthesized by the microwave-modified sol-gel method, and the upconversion and spectroscopic properties were investigated. Well-crystallized particles showed a fine and homogeneous morphology with particle sizes of $2-5{\mu}m$. Under excitation at 980 nm, $NaLa_{0.5}(MoO_4)_2:Eu_{0.05}Yb_{0.45}$ particles exhibited a strong 525-nm emission band and a weak 550-nm emission band in the green region, and a very weak 665-nm emission band in the red region. The strong 525-nm emission in the green region corresponds to the $^7F_1{\rightarrow}^5D_1$ transition and the weak 550-nm emission in the green region corresponds to the $^7F_0{\rightarrow}^5D_2$ transition, while the very weak emission 665-nm band in the red region corresponds to the $^5D_0{\rightarrow}^7F_3$ transition. The Raman spectra of the doped particles indicated the domination of strong peaks at higher frequencies of 762, 890, 1358 and $1430cm^{-1}$ and weak peaks at lower frequencies of 323, 388 and $450cm^{-1}$ induced by the disorder of the $[MoO4]^{2-}$ groups with the incorporation of the $Eu^{3+}$ and $Yb^{3+}$ elements into the crystal lattice or by a new phase formation.