• Progress in Superconductivity
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• v.12 no.2
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• pp.75-81
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• 2011

We report on the progress that has been made in developing $MgB_2$ superconducting wires and tapes for commercialization and research efforts. A number of techniques have been developed to overcome the obstacle posed by the poor critical current density ($J_c$) of pristine $MgB_2$. Chemical doping has proved to be the effective way to modify and enhance the superconducting properties, such as the $J_c$ and the irreversibility field ($B_{irr}$). More than 100 different types of dopants have been investigated over the past 8 years. Among these, the most effective dopants have been identified to be SiC and malic acid ($C_4H_6O_5$). The best results, viz. a $B_{irr}$ of 22 T and $J_c$ of $30,000\;A{\cdot}cm^{-2}$ at 4.2 K and 10 T, were reported for malic acid doped $MgB_2$ wires, which matched the benchmark performance of commercial low temperature superconductor wires. In this work, we discuss the progress made in $MgB_2$ conductors over the past few years at the University of Wollongong, Hyper Tech Research, Inc., and Ohio State University.

• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Journal of the Korean Ceramic Society
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• v.51 no.1
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• pp.43-50
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• 2014

We fabricated undoped and Sb-doped $SnO_2$ thin films on glass substrates by a pulsed laser deposition (PLD) process. Undoped and 2 - 8 wt% $Sb_2O_3$-doped $SnO_2$ targets with a high density level of ~90% were prepared by the spark plasma sintering (SPS) process. Initially, the effects of the deposition temperature on undoped $SnO_2$ thin films were investigated in the region of $100-600^{\circ}C$. While the undoped $SnO_2$ film exhibited the lowest resistivity of $1.20{\times}10^{-2}{\Omega}{\cdot}cm$ at $200^{\circ}C$ due to the highest carrier concentration generated by the oxygen vacancies, 2 wt% Sb-doped $SnO_2$ film exhibited the lowest resistivity value of $5.43{\times}10^{-3}{\Omega}{\cdot}cm$, the highest average transmittance of 85.8%, and the highest figure of merit of 1202 ${\Omega}^{-1}{\cdot}cm^{-1}$ at $400^{\circ}C$ among all of the doped films. These results imply that 2 wt% $Sb_2O_3$ is an optimum doping content close to the solubility limit of $Sb^{5+}$ substitution for the $Sb^{4+}$ sites of $SnO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.705-709
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• 2003

The microstructure and electrical properties of the $Pr_6O_{11}$-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ amount. The varistor ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.85g/cm^3$ as $Tb_4O_7$ amount is increased. The calculated nonlinear exponent( ${\alpha}$ ) in varistor ceramics without $Tb_4O_7$ was only 8.9, whereas the ${\alpha}$ value of the varistor ceramics with $Tb_4O_7$ was abruptly increased in the range of 18.6 to 42.0. In particular, the maximum value(42.0) of ${\alpha}$ was obtained by doping of 1.0 mol% $Tb_4O_7$. The measured leakage current($I_{\ell}$) in varistor ceramics without $Tb_4O_7$ was $40.1{\mu}A$, whereas the $I{\ell}$ value of the varistors with $Tb_4O_7$ was very abruptly decreased below $5{\mu}A$. It is estimated that $Tb_4O_7$ additives will is applied usefully in development of varistors possessing high performance.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.638-642
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• 2010

The spinel material $Li_4Ti_5O_{12}$ has attracted considerable attention as an anode electrode material for many battery applications owing to its light weight and high energy density. However, the real capacity of $Li_4Ti_5O_{12}$ powder as determined by the solid-state method is lower than the ideal capacity. In this study, we investigated the effect of the dopants in M-doped spinel $Ba_xLi_{4-2x}Ti_5O_{12}$(x=0.005, 0.05, 0.1) powders prepared by the solid-state reaction method and used as the anode material in lithiumion batteries. The results confirmed the effect of the Ba and Sr dopants on the powder properties of the spinel $Li_4Ti_5O_{12}$, which exhibited a pure spinel structure without any secondary phase in its XRD pattern. Moreover, the electrochemical properties of the spinel M-LTO materials were investigated using a half cell. The electrochemical data show that cells with anodes made of undoped $Li_4Ti_5O_{12}$ and Ba- and Sr-doped $Li_4Ti_5O_{12}$ have discharge capacities of 97, 130, and 112 mAh/g, respectively, at the first cycle. Moreover, the Ba- and Sr-doped spinel $Li_4Ti_5O_{12}$ demonstrated good properties in the mid-voltage range at 1.55 V, showing stable cyclic voltammogram properties which surpassed those of the same material without Ba or Sr at 1 C after 100 cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.316-319
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• 2000

In the case of immobilizing of glucose oxidase into polypyrrole (PPy) using electrosynthesis, the glucose oxidase (GOx) forms a coordinate bond with the polymer's backbone. However, because of intrinsic insulation and net-chain of the enzyme, the charge transfer and mass transport are obstructed during the film growth. Therefore, the film growth is dull. We synthesized the enzyme electrode by electropolymerization added some organic solvent, A formative seeds of film growth is delayed by adding the solvent. The delay is induced by radical transfer between the solvent and pyrrole monomer. In the case of adding ethanol, the radical transfer shares the contribution of dopant between electrolyte anion and GOx polyanion. This may lead to increase amount of immobilized the enzyme in ppy. However, adding tetrahydrofuran (THF), the radical transfer is more brisk, resulting in short chained polymer. Therefore, the doping level is lowered and then amount of immobilized of enzyme is decreased. For the UV absorption spectra of synthetic solution before synthesis and after, in the case of ethanol added, the optical density was slightly decreased for the GOx peaks. It suggests amount of GOx in the solution was decreased and amount of GOx in the film was increased. We established qualitatively that amount of immobilization can be improved by adding a little ethanol in the synthetic solution. It is due to radical transfer reaction. The radical transfer shares the contribution of dopant between small and fast electrolyte anion and big and slow GOx polyanion.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.126-129
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• 2010

(1-X) $(Na_{0.5}K_{0.5})NbO_3-X$ $K_4CuNb_8O_{23}$ (NKN-X KCN) ceramics were produced using the conventional solid state sintering method, and their sinterability and electric properties were investigated. The density, dielectric constant (${\varepsilon}_r$), piezoelectric constant $d_{33}$, electromechanical coupling factor $k_p$ and mechanical quality factor $Q_m$ value of the NKN ceramics depended upon the KCN content and the sintering temperature. In particular, the KCN addition to the NKN greatly improved the mechanical quality factor $Q_m$ value. The ceramic with X = 2.0 mol% sintered at $1,150^{\circ}C$ possesses the optimum properties (${\varepsilon}_r=241$, $d_{33}=78$, $k_p=0.34$ and $Q_m=1,121$). These results indicate that the ceramic is a promising candidate material for applications in lead free piezoelectric transformer and filter materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.646-650
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• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.