• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.574-579
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• 1999

A counter-flow type horizontal reactor of metal organic chemical vapor deposition was designed with the Reynolds and the Rayleigh numbers of Re = 4.5 and Ra = 215.8, respectively. The GaN thin films were grown and characterized by Hall measurement, double crystal X-ray diffraction analysis and photoluminescence measurement. The Si and Mg were also used for doping of GaN films. The dislocation density of $2.6{\times}10^8/\textrm {cm}^2$ was included in GaN films representing the geometrical lattice mismatch between sapphire substrates and GaN films. The Si doped n-GaN films provide the electron carrier density and mobility in the regions of $10^{17}~10^{18}/\textrm{cm}^3$ and 200~400 $\textrm{cm}^2$/V .sec, respectively. Mg doped p-GaN films were post-annealed and activated with the hole carrier density of $8{\times}10^{17}/{\textrm}{cm}^3$.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.413-416
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• 2008

A synthesis route to ordered mesoporous carbons with controllable nitrogen content has been developed for high-performance EDLC electrodes. Nitrogen-doped ordered mesoporous carbons (denoted as NMC) were prepared by carbonizing a mixture of two different carbon sources within the mesoporous silica designated by KIT-6. Furfuryl alcohol was used as a primary carbon precursor, and melamine as a nitrogen dopant. This synthesis procedure gave cubic Ia3d mesoporous carbons containing nitrogen as much as 13%. The carbon exhibited a narrow pore size distribution centered at 3-4 nm with large pore volume (0.6-1 cm3 g-1) and high specific BET surface area (700-1000 m2 g-1). Electrochemical behaviors of the NMC samples with various N-contents were investigated by a two-electrode measurement system at aqueous solutions. At low current density, the NMC exhibited markedly increasing capacitance due to the increase in the nitrogen content. This result could be attributed to the enhanced surface affinity between carbon electrode and electrolyte ions due to the hydrophilic nitrogen functional groups. At high current density conditions, the NMC samples exhibited decreasing specific capacitance against the increase in the nitrogen content. The loss of the capacitance with the N-content may be explained by high electric resistance which causes a significant IR drop at high current densities. The present results indicate that the optimal nitrogen content is required for achieving high power and high energy density simultaneously.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.327-334
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• 2013

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material ($Al_{0.2}Ga_{0.8}Sb$) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the $1^{st}$ satellite superlattice peak from the X-ray diffraction was around 45 arcsec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12 eV) at 80 K while under an applied bias of -1.4 V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.0{\times}10^{-2}A/cm^2$ at 80 K and with a bias -1.5 V. The responsivity was 0.58 A/W at $7.5{\mu}m$ at 80 K and with a bias of -1.5 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.942-948
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• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• Journal of the Korean Ceramic Society
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• v.56 no.2
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• pp.111-129
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• 2019

Recently, all-solid-state batteries (ASSBs) have attracted increasing interest owing to their higher energy density and safety. As the core material of ASSBs, the characteristics of the solid electrolyte largely determine the performance of the battery. Thus far, a variety of inorganic solid electrolytes have been studied, including the NASICON-type, LISICON-type, perovskite-type, garnet-type, glassy solid electrolyte, and so on. The garnet Li₇La₃Zr₂O₁₂ (LLZO) solid electrolyte is one of the most promising candidates because of its excellent comprehensively electrochemical performance. Both, experiments and theoretical calculations, show that cubic LLZO has high room-temperature ionic conductivity and good chemical stability while contacting with the lithium anode and most of the cathode materials. In this paper, the crystal structure, Li-ion transport mechanism, preparation method, and element doping of LLZO are introduced in detail based on the research progress in recent years. Then, the development prospects and challenges of LLZO as applied to ASSBs are discussed.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.669-675
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• 2010

One of the greatest challenges for our society is providing powerful electrochemical energy conversion and storage devices. Rechargeable lithium-ion batteries and fuel cells are among the most promising candidates in terms of energy and power density. As the starting material, $TiCl_4{\cdot}YCl_3$ solution and dispersing agent (HCP) were mixed and synthesized using ammonia as the precipitation agent, in order to prepare the nano size Y doped spherical $TiO_2$ precursor. Then, the $Li_4Ti_5O_{12}$ was synthesized using solid state reaction method through the stoichiometric mixture of Y doped spherical $TiO_2$ precursor and LiOH. The Ti mole increased the concentration of the spherical particle size due to the addition of HPC with a similar particle size distribution in a well in which $Li_4Ti_5O_{12}$ spherical particles could be obtained. The optimal synthesis conditions and the molar ratio of the Ti 0.05 mol reaction at $50^{\circ}C$ for 30 minutes and at $850^{\circ}C$ for 6 hours heat treatment time were optimized. $Li_4Ti_5O_{12}$ was prepared by the above conditions as a working electrode after generating the Coin cell; then, electrochemical properties were evaluated when the voltage range of 1.5V was flat, the initial capacity was 141 mAh/g, and cycle retention rate was 86%; also, redox reactions between 1.5 and 1.7V, which arose from the insertion and deintercalation of 0.005 mole of Y doping is not a case of doping because the C-rate characteristics were significantly better.

• Applied Chemistry for Engineering
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• v.9 no.5
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• pp.734-741
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• 1998

Electrode characteristics were studied in the interface between sample solutions and $K^+$ ion selective PVC membrane electrodes containing neutral carriers, dibenzo-18-crown-6(D18Cr6) and valinomycin(Val). The effect of doping of base electrolytes, the chemical structure and the content of carrier, variation of plasticizer, membrane thickness, and concentration variation of sample solution on the response characteristics of electrode such as the measured Nernstian slope, the detection limit, the linear response range, and potentiometric selectivity coefficients, were studied. In order to synthesize the membrane D18Cr6 and Val as neutral carriers were used, and complex between the carrier and $K^+$ ions were used as active materials. PVC membrane electrodes were made of plasticizers (DBP, DOS, and DBS), the base electrolyte[potassium tetraphenylborate(KTPB)], and solvent(THF). The chemical structure of carrier D18Cr6 was best for electrode and ideal electrode characteristics were appeared especially in case of doping of TPB. The optimum carrier content was about 3.23 wt % in case of D18Cr6 and Val. DBP was best as a plasticizer. As membrane thickness decreased the electrode characteristics was improved. But its characteristics were lowered below the optimum membrane thickness because of the elution of carrier, deterioration of membrane strength, etc. In the case of D18Cr6, the selectivity coefficients by the mixed solution method for the $K^+$ ion were in the order of $NH_4{^+}>Ca^{2+}>Mg^{2+}>Na^+$.

• Progress in Superconductivity
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• v.10 no.2
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• pp.79-86
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• 2009

We successfully fabricated C-doped ex-situ $MgB_2$ wires using two different methods such as mechanical alloying(MA) and combined process(CP) of in-situ and ex-situ. In the MA, the precursor powder was prepared with a mixture of $MgB_2$ and 1 at% C powders by planetary ball milling for 0-100 h. In the CP, on the other hand, C-doped $MgB_2$ powder was prepared with Mg, B, and C powders by in-situ process via compaction, sintering, and crushing. The powders prepared by two methods were loaded into Fe tube and then the assemblages were drawn by a conventional powder-in-tube technique. The MA treatment of C-added $MgB_2$ decreased the particles/grains size and resulted in C-doping into $MgB_2$ after sintering, improving the critical current density($J_c$) in high external magnetic field. For the C-doped $MgB_2$ wire by MA for 25 h, the $J_c$ was $4.1{\times}10^3A/cm^2$ at 5 K and 6.4 T, which was 5.9 times higher than that of pure and untreated $MgB_2$ wire. The CP also provided C-doping into $MgB_2$ and improved the $J_c$ in high magnetic field; the C-doped $MgB_2$ wire fabricated by CP exhibited a $J_c$ being 2.3 times higher than that of the ex-situ wire used commercial $MgB_2$ powder at 5 K and 6.0 T($2.7{\times}10^3A/cm^2\;vs.\;1.2{\times}10^3A/cm^2$).

• Electronic Materials Letters
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• v.14 no.6
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• pp.689-699
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• 2018

Nanostructured Ni doped $Bi_2S_3$ ($Bi_{2-x}Ni_xS_3$, $0{\leq}x{\leq}0.07$) is explored as a candidate for telluride free thermoelectric material, through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with a sintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introduction of the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2) introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of $Bi_2S_3$ was decreased by adding Ni atoms, which shows a minimum value of $2.35{\times}10^{-3}{\Omega}m$ at $300^{\circ}C$ for $Bi_{1.99}Ni_{0.01}S_3$ sample. The presence of porous structures gives a significant effect on reduction of thermal conductivity, by a reduction of ~ 59.6% compared to a high density $Bi_2S_3$. The thermal conductivity of $Bi_{2-x}Ni_xS_3$ ranges from 0.31 to 0.52 W/m K in the temperature range of $27^{\circ}C$ (RT) to $300^{\circ}C$ with the lowest ${\kappa}$ values of $Bi_2S_3$ compared to the previous works. A maximum ZT value of 0.13 at $300^{\circ}C$ was achieved for $Bi_{1.99}Ni_{0.01}S_3$ sample, which is about 2.6 times higher than (0.05) of $Bi_2S_3$ sample. This work show an optimization pathway to improve thermoelectric performance of $Bi_2S_3$ through Ni doping and introduction of porosity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.969-976
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• 2011

In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.