• Journal of the Korean institute of surface engineering
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• v.31 no.2
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• pp.109-116
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• 1998

Highly transparent conductive pure and fluorine-doped tin oxide(FT0, $SnO_2$ : F) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyitin(TMT) with oxygen or oxygen containing ozone. The properties of TO films have been changed with the variation of gases, flow rate, and substrate temperature. The nsing of oxygen containing ozone instead of pure oxygen, reduced substrate temperature by 100-$150^{\circ}C$ while maintaining same thickness. The films prepared by using ozone showed the resistivity in the range from $10^~2$ to $10^{~3}\Omega$cm, and the mobiiity from 10 to $14\textrm{cm}^2$/Vs. Fluorine-doped tin oxide films had properties such as the resistivity about $10^{-4}\Omega$cm, and the mobility from 14 to $19\textrm{cm}^2$/Vs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.345-350
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• 2018

Nanomaterials have considerable potential to solve several key challenges in various electrochemical devices, such as fuel cells. However, the use of nanoparticles in high-temperature devices like solid-oxide fuel cells (SOFCs) is considered problematic because the nanostructured surface typically prepared by deposition techniques may easily coarsen and thus deactivate, especially when used in high-temperature redox conditions. Herein we report the synthesis of a self-regenerated Pd metal nanoparticle on the perovskite oxide anode surface for SOFCs that exhibit self-recovery from their degradation in redox cycle and $CH_4$ fuel running. Using Pd-doped perovskite, $La(Sr)Fe(Mn,Pd)O_3$, as an anode, fairly high maximum power densities of 0.5 and $0.2cm^{-2}$ were achieved at 1,073 K in $H_2$ and $CH_4$ respectively, despite using thick electrolyte support-type cell. Long-term stability was also examined in $CH_4$ and the redox cycle, when the anode is exposed to air. The cell with Pd-doped perovskite anode had high tolerance against re-oxidation and recovered the behavior of anodic performance from catalytic degradation. This recovery of power density can be explained by the surface segregation of Pd nanoparticles, which are self-recovered via re-oxidation and reduction. In addition, self-recovery of the anode by oxidation treatment was confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.166-173
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• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.194-199
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• 2020

By controlling the composition of the metal-oxide nanosheet having a two-dimensional layered crystal structure, material properties and application can be extended. In this study, the composition of the nanosheet could be expanded from pure composition to doping composition by successfully synthesizing the TiO₂ nanosheet doped with Nb. Specifically, the doping composition was designed when synthesizing the layered metal oxide as a starting material (K_0.8Ti_1.73-xNb_xLi_0.27O₄, x = 0, 0.03, 0.07) and chemical exfoliation was performed. By doing this, it was possible to obtain the Nb-doped TiO_y ultrathin nanosheet. The size of the nano sheet was 2 ㎛ or less based on the long length in the x-y direction, and the thickness was about 1 nm. Nb-doping was confirmed by XRD and SEM-EDS analysis.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.225.1-225
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.452-452
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• 2013

ZnO is one of the most attractive transparent conductive oxide (TCO) films because of low toxicity, a wide band gap material and relatively low cost. However, the electrical conductivity of un-doped ZnO is too high to use it as TCO films in practical application. To improve electrical properties of undoped ZnO, transition metal (TM) doped ZnO films such as Al doped ZnO or Ti doped ZnO have been extensively studied. Here, we prepared Ti doped ZnO thin films by atomic layer deposition (ALD) for the application of TCO films. ALD was used to prepare Ti-doped ZnO thin films due to its inherent merits such as large area uniformity, precise composition control in multicomponent thin films, and digital thickness controllability. Also, we demonstrated that ALD method can be utilized for fabricating highly ordered freestanding nanostructures of Ti-doped ZnO thin films by combining with BCP templates, which can potentially used in the photovoltaic applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.671-676
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• 2012

In this paper, TCAD assessment of 30-V class n-channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described. Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device - i.e. higher transconductance ($g_m$), better drain output current ($I_{ON}$), reduced specific on-resistances ($R_{ON}$) and higher breakdown characteristics ($BV_{DSS}$).

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.295-302
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• 2008

$TiO_2,\;ZrO_2$, and $SiO_2$ were added in the concentration of 1 - 3 wt.% to improve long-term stability for the $SnO2$ thick film gas sensor. Short-term sensor resistances up to 90 h were measured to investigate the stabilization time of initial resistance in air. Long-term resistance drifts in air and in gas to 5000 ppm methane for the sensors annealed at $750^{\circ}C$ for 1 h and continuously heated at an operating temperature of $400^{\circ}C$ were also measured up to 90 days at an interval of 1 day. The long-term drifts in methane sensitivity for the three metal oxide-doped $SnO2$ sensors are closely related to methane sensitivity level, catalytic activity, and long-term drift in sensor resistance in air. Those stabilities are mainly discussed in terms of oxidation state and catalytic activity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.23.1-23.1
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• 2009

ZnO is of great interest for various technological applications ranging from optoelectronics to chemical sensors because of its superior emission, electronic, and chemical properties. In addition, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. To date, several approaches have been proposed for the growth of one-dimensional (1D) ZnO nanostructunres. Several groups have been reported the MOCVD growth of ZnO nanorods with no metal catalysts at $400^{\circ}C$, and fabricated a well-aligned ZnO nanorod array on a PLD prepared ZnO film by using a catalyst-free method. It has been suggested that the synthesis of ZnO nanowires using a template-less/surfactant-free aqueous method. However, despite being a well-established and cost-effective method of thin film deposition, the use of magnetrons puttering to grow ZnO nanorods has not been reported yet. Additionally,magnetron sputtering has the dvantage of producing highly oriented ZnO film sat a relatively low process temperature. Currently, more effort has been concentrated on the synthesis of 1D ZnO nanostructures doped with various metal elements (Al, In, Ga, etc.) to obtain nanostructures with high quality,improved emission properties, and high conductance in functional oxide semiconductors. Among these dopants, Ga-doped ZnO has demonstrated substantial advantages over Al-doped ZnO, including greater resistant to oxidation. Since the covalent bond length of Ga-O ($1.92\;{\AA}$) is nearly equal to that of Zn-O ($1.97\;{\AA}$), high electron mobility and low electrical resistivity are also expected in the Ga-doped ZnO. In this article, we report the successful growth of Ga-doped ZnO nanorods on c-Sapphire substrate without metal catalysts by magnetrons puttering and our investigations of their structural, optical, and field emission properties.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1867-1872
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• 2018

This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at $350^{\circ}C$ for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at $250^{\circ}C$) and CO (at $200^{\circ}C$) gases in comparison with the undoped samples.